Patents by Inventor Daike Wu

Daike Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabrication of a semiconductor device
    Patent number: 8034643
    Abstract: A method for fabrication of a semiconductor device on a substrate, the semiconductor having a wafer. The method includes the steps:(a) applying a seed layer of a thermally conductive metal to the wafer;(b) electroplating a relatively thick layer of the conductive metal on the seed layer, and(c) removing the substrate. A corresponding semiconductor device is also disclosed.
    Type: Grant
    Filed: September 19, 2003
    Date of Patent: October 11, 2011
    Assignee: Tinggi Technologies Private Limited
    Inventors: Xuejun Kang, Daike Wu, Edward Robert Perry, Shu Yuan
  • Fabrication of semiconductor devices for light emission
    Patent number: 8004001
    Abstract: A semiconductor device for light emission having a plurality of epitaxial layers with an n-type layer for light emission and a p-type layer for light reflection. The p-type layer has at least one seed layer for an outer layer of a conductive metal. The at least at least one seed layer is a material for providing a buffer for differential thermal expansion of the outer layer and the light reflecting layer.
    Type: Grant
    Filed: September 1, 2006
    Date of Patent: August 23, 2011
    Assignee: Tinggi Technologies Private Limited
    Inventors: Shu Yuan, Xuejun Kang, Daike Wu
  • Fabrication of Conductive Metal Layer on Semiconductor Devices
    Publication number: 20080210970
    Abstract: A method for fabrication of a light emitting device on a substrate, the light emitting device having a wafer with multiple epitaxial layers and an ohmic contact layer on the epitaxial layers remote from the substrate. The method includes the steps: (a) applying to the ohmic contact layer a seed layer of a thermally conductive metal; (b) electroplating a relatively thick layer of the conductive metal on the seed layer; and (c) removing the substrate. A corresponding light emitting device is also disclosed. The light emitting device is a GaN light emitting diode or laser diode.
    Type: Application
    Filed: September 19, 2003
    Publication date: September 4, 2008
    Applicant: TINGGI TECHNOLOGIES PRIVATE LIMITED
    Inventors: Xuejun Kang, Daike Wu, Edward Robert Perry, Shu Yuan
  • Fabrication of Semiconductor Devices
    Publication number: 20080164480
    Abstract: A method for fabrication of a semiconductor device on a substrate, the semiconductor having a wafer. The method includes the steps:(a) applying a seed layer of a thermally conductive metal to the wafer; (b) electroplating a relatively thick layer of the conductive metal on the seed layer, and(c) removing the substrate. A corresponding semiconductor device is also disclosed.
    Type: Application
    Filed: September 19, 2003
    Publication date: July 10, 2008
    Inventors: Xuejun Kang, Daike Wu, Edward Robert Perry, Shu Yuan