Abstract: A plasma etching method according to an embodiment is a method for etching a silicon-containing film by using plasma of a fluorocarbon gas. The fluorocarbon gas includes at least one selected from a first fluorocarbon which has a main chain of six or more carbons bonded in a linear manner, the main chain having a structure of single bond and double bond alternately joined, a second fluorocarbon which has a main chain of six or more carbons bonded in a linear manner, the main chain having a structure of single bond and triple bond alternately joined, and a third fluorocarbon which has a main chain of five or more carbons bonded in a linear manner, the main chain having a structure which includes double bond and triple bond.

Abstract: A gas supply device according to an embodiment comprises a first gas supplier connected to a process chamber processing a substrate, and incorporating therein first and second electrodes each generating a process gas to be supplied to the process chamber. A first pipe is interposed between the first electrode and the process chamber. A second pipe is interposed between the first electrode and a discharging part. A third pipe is interposed between the second electrode and the process chamber. A fourth pipe is interposed between the second electrode and the discharging part. A second gas supplier is connectable to the second and fourth pipes.

Abstract: According to one embodiment, a gas supply device includes at least one reservoir tank, which is to be connected to a process chamber configured to process a substrate and is configured to store a process gas to be supplied to the process chamber. A gas generator is configured to generate the process gas. A plurality of supply spaces is provided between the reservoir tank and the gas generator, is configured to receive the process gas from the gas generator, and supply the process gas in a pressurized state to the reservoir tank.

Abstract: A method for manufacturing a thermal head, including: forming a resistance heating element and an electrode on an insulating substrate, the resistance heating element emitting heat by a current flowing the resistance heating element, the electrode being connected to the resistance heating element; forming a corrosion prevention layer on the resistance heating element and the electrode; annealing the resistance heating element; adjusting an electrical resistance of the resistance heating element; and forming a protective layer on the corrosion prevention layer, the protective layer having glass as a main component. The annealing is implemented prior to the adjusting. The forming the corrosion prevention layer is implemented prior to the annealing.

Abstract: A method for manufacturing a thermal head, including: forming a resistance heating element and an electrode on an insulating substrate, the resistance heating element emitting heat by a current flowing the resistance heating element, the electrode being connected to the resistance heating element; forming a corrosion prevention layer on the resistance heating element and the electrode; annealing the resistance heating element; adjusting an electrical resistance of the resistance heating element; and forming a protective layer on the corrosion prevention layer, the protective layer having glass as a main component. The annealing is implemented prior to the adjusting. The forming the corrosion prevention layer is implemented prior to the annealing.

Abstract: A method of manufacturing an optical semiconductor element comprises: forming a striped protruding body by selectively dry etching an InGaAlP layer along its thickness, the InGaAlP layer being formed on a substrate; forming a protection film on an upper face and on both side faces of the protruding body; and forming a ridge including the protruding body by etching the InGaAlP layer around the protruding body using a solution containing hydrofluoric acid.

Abstract: A method of manufacturing an optical semiconductor element comprises: forming a striped protruding body by selectively dry etching an along its thickness, the InGaAIP layer being formed on a substrate; forming a protection film on an upper face and on both side faces of the protruding body; and forming a ridge including the protruding body by etching the InGaAIP layer around the protruding body using a solution containing hydrofluoric acid.