Abstract: This method of manufacturing a semiconductor laser apparatus includes steps of forming a first solder layer on a first electrode, forming a second solder layer with a second melting point on a second electrode through a barrier layer, forming a reaction solder layer with a third melting point higher than the second melting point by reacting the first solder layer having a first melting point with the first electrode and bonding a first semiconductor laser device to a base through the reaction solder layer, and bonding a second semiconductor laser device by melting the second solder layer with the second melting point after the step of bonding the first semiconductor laser device.

Abstract: This semiconductor laser apparatus includes a base having a step portion, a first upper surface on a lower side of the step portion and a second upper surface on an upper side of the step portion, a first semiconductor laser device bonded onto the first upper surface, having a first light-emitting region on an upper side thereof, and a second semiconductor laser device bonded onto the second upper surface, having a second light-emitting region on a lower side thereof. The first light-emitting region is located above the second upper surface in a state where the base is horizontally arranged.

Abstract: A semiconductor laser device that can suppress size increase of a semiconductor laser element and increase in an interval between light emitting portions and can improve productivity is provided. This semiconductor laser device has a first semiconductor laser element, and a second semiconductor laser element which is a monolithic multi-wavelength semiconductor laser element. The second semiconductor laser element includes a semiconductor substrate, and, of side faces of the semiconductor substrate of the second semiconductor laser element, a side face arranged opposite the first semiconductor laser element is inclined with respect to the normal direction of a major face of the semiconductor substrate so that a distance from the first semiconductor laser element is increasingly large away from a mounting member.

Abstract: This semiconductor laser apparatus includes a support member having a main surface, a first semiconductor laser device bonded onto the main surface through a first bonding layer and a second semiconductor laser device bonded onto the main surface through a second bonding layer to be adjacent to the first semiconductor laser device. The melting point of the second bonding layer is lower than that of the first bonding layer, and a first height from the main surface to a fourth surface of the second semiconductor laser device is larger than a second height from the main surface to a second surface of the first semiconductor laser device.