Patents by Inventor Daiki Satoh

Daiki Satoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210233794
    Abstract: A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.
    Type: Application
    Filed: April 16, 2021
    Publication date: July 29, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shoichiro MATSUYAMA, Daiki SATOH, Yasuharu SASAKI, Takashi NISHIJIMA, Jinyoung PARK
  • Patent number: 11004717
    Abstract: A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.
    Type: Grant
    Filed: September 13, 2018
    Date of Patent: May 11, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shoichiro Matsuyama, Daiki Satoh, Yasuharu Sasaki, Takashi Nishijima, Jinyoung Park
  • Publication number: 20210082733
    Abstract: A mounting table, to which a voltage is applied, includes an electrostatic chuck having a mounting surface for mounting a target object and a rear surface opposite to the mounting surface, the electrostatic chuck having a first through-hole formed in the mounting surface; a base, which is in contact with the rear surface of the electrostatic chuck, having a second through-hole communicating with the first through-hole; a cylindrical spacer inserted in the second through-hole; and a pin accommodated in the first through-hole and the spacer. Gaps are formed between the pin and inner walls of the first through-hole and the spacer, and the gap between the first through-hole and the pin is greater than the gap between the spacer and the pin.
    Type: Application
    Filed: November 30, 2020
    Publication date: March 18, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yasuharu SASAKI, Daiki SATOH, Akira NAGAYAMA
  • Publication number: 20190088523
    Abstract: A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.
    Type: Application
    Filed: September 13, 2018
    Publication date: March 21, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shoichiro MATSUYAMA, Daiki SATOH, Yasuharu SASAKI, Takashi NISHIJIMA, Jinyoung PARK
  • Publication number: 20180090361
    Abstract: A mounting table, to which a voltage is applied, includes an electrostatic chuck having a mounting surface for mounting a target object and a rear surface opposite to the mounting surface, the electrostatic chuck having a first through-hole formed in the mounting surface; a base, which is in contact with the rear surface of the electrostatic chuck, having a second through-hole communicating with the first through-hole; a cylindrical spacer inserted in the second through-hole; and a pin accommodated in the first through-hole and the spacer. Gaps are formed between the pin and inner walls of the first through-hole and the spacer, and the gap between the first through-hole and the pin is greater than the gap between the spacer and the pin.
    Type: Application
    Filed: September 28, 2017
    Publication date: March 29, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yasuharu SASAKI, Daiki SATOH, Akira NAGAYAMA
  • Patent number: 9613837
    Abstract: A substrate processing apparatus includes: a first processing chamber; a second processing chamber; a transfer chamber; a frame structure; and an elevating part. Each of the first and the second processing chamber has a main body part and a lid part. The transfer chamber is connected to the first and the second processing chamber and accommodates a transfer unit for transferring the substrate. The frame structure has a pair of column parts and a beam part supported at top portions of the column parts. The elevating part is coupled to the beam part to be moved in a horizontal direction and moves the lid part in the vertical direction. The beam part extends above the first and the second processing chamber and the transfer chamber.
    Type: Grant
    Filed: April 1, 2013
    Date of Patent: April 4, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shigeru Senzaki, Michishige Saito, Daiki Satoh, Ken Horiuchi, Koji Ando, Shingo Koiwa
  • Publication number: 20150086302
    Abstract: A substrate processing apparatus includes: a first processing chamber; a second processing chamber; a transfer chamber; a frame structure; and an elevating part. Each of the first and the second processing chamber has a main body part and a lid part. The transfer chamber is connected to the first and the second processing chamber and accommodates a transfer unit for transferring the substrate. The frame structure has a pair of column parts and a beam part supported at top portions of the column parts. The elevating part is coupled to the beam part to be moved in a horizontal direction and moves the lid part in the vertical direction. The beam part extends above the first and the second processing chamber and the transfer chamber.
    Type: Application
    Filed: April 1, 2013
    Publication date: March 26, 2015
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shigeru Senzaki, Michishige Saito, Daiki Satoh, Ken Horiuchi, Koji Ando, Shingo Koiwa
  • Patent number: 8192577
    Abstract: In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.
    Type: Grant
    Filed: June 25, 2009
    Date of Patent: June 5, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Daiki Satoh, Hideyuki Kobayashi, Masato Horiguchi
  • Patent number: 7618515
    Abstract: In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.
    Type: Grant
    Filed: November 10, 2005
    Date of Patent: November 17, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Daiki Satoh, Hideyuki Kobayashi, Masato Horiguchi
  • Publication number: 20090255902
    Abstract: In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.
    Type: Application
    Filed: June 25, 2009
    Publication date: October 15, 2009
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Daiki Satoh, Hideyuki Kobayashi, Masato Horiguchi
  • Publication number: 20060102288
    Abstract: In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.
    Type: Application
    Filed: November 10, 2005
    Publication date: May 18, 2006
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Daiki Satoh, Hideyuki Kobayashi, Masato Horiguchi
  • Patent number: D559993
    Type: Grant
    Filed: July 8, 2005
    Date of Patent: January 15, 2008
    Assignee: Tokyo Electron Limited
    Inventors: Keiichi Nagakubo, Daiki Satoh
  • Patent number: D559994
    Type: Grant
    Filed: July 8, 2005
    Date of Patent: January 15, 2008
    Assignee: Tokyo Electron Limited
    Inventors: Keiichi Nagakubo, Daiki Satoh
  • Patent number: D560284
    Type: Grant
    Filed: July 8, 2005
    Date of Patent: January 22, 2008
    Assignee: Tokyo Electron Limited
    Inventors: Keiichi Nagakubo, Daiki Satoh