Patents by Inventor Daiki Satoh
Daiki Satoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240116729Abstract: A paper feeding device includes: a bearing base to which a spool inserted into a paper roll, around which a paper is wound, is detachably attachable; a support including: a leading-end detection sensor to detect a leading end of the paper on the paper roll and output a sensor signal; and a roller disposed at a position in the support different from the leading-end detection sensor in a circumferential direction of the paper roll, to cause the leading-end detection sensor and the roller to contact a surface of the paper roll attached to the bearing base; and to cause the leading-end detection sensor and the roller to be directed toward an axial center of the spool; and a motor to rotate the spool in a feeding direction to feed the paper and in a reverse direction opposite to the feeding direction.Type: ApplicationFiled: September 29, 2023Publication date: April 11, 2024Applicant: Ricoh Company, Ltd.Inventors: Takeshi IWASAKI, Daiki SATOH, Katsumi OKADA
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Patent number: 11830751Abstract: A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.Type: GrantFiled: April 16, 2021Date of Patent: November 28, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Shoichiro Matsuyama, Daiki Satoh, Yasuharu Sasaki, Takashi Nishijima, Jinyoung Park
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Publication number: 20230271800Abstract: A sheet supply device includes a supporter, a rotation device, a guide, a support shaft, a biasing member, a sensor, a roller, and control circuitry. The sensor is disposed to protrude from the facing portion toward the roll and biased in a direction to contact the outer peripheral surface of the roll. The sensor outputs a detection signal at a level corresponding to an amount at which the sensor protrudes from the facing portion. The roller is supported by the facing portion, to contact the outer peripheral surface of the roll at a position different from a position of the sensor in a circumferential direction of the roll. The control circuitry controls the rotation device based on a signal change rate that is a change amount of the level of the detection signal per unit time.Type: ApplicationFiled: February 27, 2023Publication date: August 31, 2023Inventors: Katsumi OKADA, Daiki SATOH
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Publication number: 20210319987Abstract: An edge ring to be disposed to encircle a substrate is provided. The edge ring includes a bottom used to define vertical heights that are from points on the circumference of a virtual circle, to the bottom of the edge ring, the virtual circle having a radius from a first point that is placed on a central axis of the edge ring, the first point being defined as the center of the virtual circle, the radius being half of a diameter ranging from an inner diameter to an outer diameter of the edge ring, and an absolute value indicative of a difference between a maximum value and a minimum value for the vertical heights being set to be less than or equal to a preset upper limit.Type: ApplicationFiled: April 1, 2021Publication date: October 14, 2021Inventors: Ryo CHIBA, Akira NAGAYAMA, Yasuharu SASAKI, Daiki SATOH, Taketoshi TOMIOKA
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Publication number: 20210233794Abstract: A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.Type: ApplicationFiled: April 16, 2021Publication date: July 29, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Shoichiro MATSUYAMA, Daiki SATOH, Yasuharu SASAKI, Takashi NISHIJIMA, Jinyoung PARK
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Patent number: 11004717Abstract: A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.Type: GrantFiled: September 13, 2018Date of Patent: May 11, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Shoichiro Matsuyama, Daiki Satoh, Yasuharu Sasaki, Takashi Nishijima, Jinyoung Park
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Publication number: 20210082733Abstract: A mounting table, to which a voltage is applied, includes an electrostatic chuck having a mounting surface for mounting a target object and a rear surface opposite to the mounting surface, the electrostatic chuck having a first through-hole formed in the mounting surface; a base, which is in contact with the rear surface of the electrostatic chuck, having a second through-hole communicating with the first through-hole; a cylindrical spacer inserted in the second through-hole; and a pin accommodated in the first through-hole and the spacer. Gaps are formed between the pin and inner walls of the first through-hole and the spacer, and the gap between the first through-hole and the pin is greater than the gap between the spacer and the pin.Type: ApplicationFiled: November 30, 2020Publication date: March 18, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Yasuharu SASAKI, Daiki SATOH, Akira NAGAYAMA
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Publication number: 20190088523Abstract: A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.Type: ApplicationFiled: September 13, 2018Publication date: March 21, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Shoichiro MATSUYAMA, Daiki SATOH, Yasuharu SASAKI, Takashi NISHIJIMA, Jinyoung PARK
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Publication number: 20180090361Abstract: A mounting table, to which a voltage is applied, includes an electrostatic chuck having a mounting surface for mounting a target object and a rear surface opposite to the mounting surface, the electrostatic chuck having a first through-hole formed in the mounting surface; a base, which is in contact with the rear surface of the electrostatic chuck, having a second through-hole communicating with the first through-hole; a cylindrical spacer inserted in the second through-hole; and a pin accommodated in the first through-hole and the spacer. Gaps are formed between the pin and inner walls of the first through-hole and the spacer, and the gap between the first through-hole and the pin is greater than the gap between the spacer and the pin.Type: ApplicationFiled: September 28, 2017Publication date: March 29, 2018Applicant: TOKYO ELECTRON LIMITEDInventors: Yasuharu SASAKI, Daiki SATOH, Akira NAGAYAMA
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Patent number: 9613837Abstract: A substrate processing apparatus includes: a first processing chamber; a second processing chamber; a transfer chamber; a frame structure; and an elevating part. Each of the first and the second processing chamber has a main body part and a lid part. The transfer chamber is connected to the first and the second processing chamber and accommodates a transfer unit for transferring the substrate. The frame structure has a pair of column parts and a beam part supported at top portions of the column parts. The elevating part is coupled to the beam part to be moved in a horizontal direction and moves the lid part in the vertical direction. The beam part extends above the first and the second processing chamber and the transfer chamber.Type: GrantFiled: April 1, 2013Date of Patent: April 4, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Shigeru Senzaki, Michishige Saito, Daiki Satoh, Ken Horiuchi, Koji Ando, Shingo Koiwa
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Publication number: 20150086302Abstract: A substrate processing apparatus includes: a first processing chamber; a second processing chamber; a transfer chamber; a frame structure; and an elevating part. Each of the first and the second processing chamber has a main body part and a lid part. The transfer chamber is connected to the first and the second processing chamber and accommodates a transfer unit for transferring the substrate. The frame structure has a pair of column parts and a beam part supported at top portions of the column parts. The elevating part is coupled to the beam part to be moved in a horizontal direction and moves the lid part in the vertical direction. The beam part extends above the first and the second processing chamber and the transfer chamber.Type: ApplicationFiled: April 1, 2013Publication date: March 26, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Shigeru Senzaki, Michishige Saito, Daiki Satoh, Ken Horiuchi, Koji Ando, Shingo Koiwa
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Patent number: 8192577Abstract: In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.Type: GrantFiled: June 25, 2009Date of Patent: June 5, 2012Assignee: Tokyo Electron LimitedInventors: Daiki Satoh, Hideyuki Kobayashi, Masato Horiguchi
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Patent number: 7618515Abstract: In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.Type: GrantFiled: November 10, 2005Date of Patent: November 17, 2009Assignee: Tokyo Electron LimitedInventors: Daiki Satoh, Hideyuki Kobayashi, Masato Horiguchi
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Publication number: 20090255902Abstract: In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.Type: ApplicationFiled: June 25, 2009Publication date: October 15, 2009Applicant: TOKYO ELECTRON LIMITEDInventors: Daiki Satoh, Hideyuki Kobayashi, Masato Horiguchi
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Publication number: 20060102288Abstract: In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.Type: ApplicationFiled: November 10, 2005Publication date: May 18, 2006Applicant: TOKYO ELECTRON LIMITEDInventors: Daiki Satoh, Hideyuki Kobayashi, Masato Horiguchi
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Patent number: D559993Type: GrantFiled: July 8, 2005Date of Patent: January 15, 2008Assignee: Tokyo Electron LimitedInventors: Keiichi Nagakubo, Daiki Satoh
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Patent number: D559994Type: GrantFiled: July 8, 2005Date of Patent: January 15, 2008Assignee: Tokyo Electron LimitedInventors: Keiichi Nagakubo, Daiki Satoh
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Patent number: D560284Type: GrantFiled: July 8, 2005Date of Patent: January 22, 2008Assignee: Tokyo Electron LimitedInventors: Keiichi Nagakubo, Daiki Satoh