Abstract: A photoelectric conversion device includes a first component and a second component. The first component comprises a first semiconductor substrate having first and second surfaces, a first photoelectric conversion portion, a second photoelectric conversion portion, an FD portion, a first transfer gate that transfers signal charges generated in the first photoelectric conversion portion to the FD portion, and a second transfer gate that transfers signal charges generated in the second photoelectric conversion portion to the FD portion. The second component comprises a second semiconductor substrate having third and fourth surfaces, including a band-shaped insulator filled into a through-hole formed in the second semiconductor substrate, and being laminated on the first component.

Abstract: A photoelectric conversion element includes in a semiconductor layer a first semiconductor region arranged, a second semiconductor region arranged on a second face side closer than the first semiconductor region and forming a p-n junction with the first semiconductor region to form an avalanche photodiode, a light guide structure including a first portion surrounding a first region and a second portion surrounding a second region inside the first region in a plan view, and an optical structure layer disposed on the second face side. The second portion is disposed over a depth of at least 0.8 ?m from the second face, the first and second semiconductor regions are arranged closer to the first face than the second portion, and the second portion overlaps at least a portion of an avalanche multiplication region between the first and second semiconductor region in the plan view.

Abstract: A photoelectric conversion apparatus includes a pixel having first and second surfaces and including photoelectric conversion elements, a charge accumulation region arranged in each of the elements and configured to accumulate signal charge, a transfer gate arranged on the first surface and configured to transfer the signal charge, a floating diffusion (FD) portion arranged between the elements in a plan view from a first surface side, and a charge leak region arranged between the elements and being in contact with the elements in the plan view. The charge leak region and the charge accumulation region have the same conductivity type. The FD portion is at a first depth from the first surface. The charge leak region is at a second depth deeper than the first depth from the first surface. In the plan view, the charge leak region is at a position overlapping at least part of the FD portion.

Abstract: A photoelectric conversion apparatus includes a first component including a first semiconductor substrate having a first surface and a second surface opposite the first surface, a photoelectric conversion element configured to receive light from the first surface, a first semiconductor region, a transfer gate disposed on the second surface and configured to transfer a charge from the photoelectric conversion element to the first semiconductor region, and a first gate insulator film disposed between the second surface and the transfer gate, and a second component stacked on the first component and including a second semiconductor substrate having a third surface and a fourth surface opposite the third surface, an amplifier transistor including a gate connected to the first semiconductor region, and a second gate insulator film between the gate and the third surface. The first gate insulator film and the second gate insulator film are different in relative permittivity.

Abstract: A photoelectric conversion device includes a first substrate including, in a first semiconductor layer, a photoelectric conversion unit and a transfer transistor configured to transfer charges generated in the photoelectric conversion unit, a second substrate including, in a second semiconductor layer, a pixel circuit configured to output a signal based on the charges transferred from the transfer transistor, and a third substrate including, in a third semiconductor layer, a logic circuit configured to process the signal, wherein the first, second and third substrates are stacked in such a way that the second substrate is disposed between the first substrate and the third substrate, wherein the first substrate and the second substrate are electrically connected by a through wiring line penetrating through an insulator included in the second semiconductor layer, and wherein a plane orientation of the first semiconductor layer and a plane orientation of the second semiconductor layer are same.

Abstract: An apparatus includes a diode in a layer having a first surface, a second surface opposite the first surface, and a third surface between the first and second surfaces. The diode includes a first region of a first conductivity type at first depth, a second region of a second conductivity type at second depth deeper than the first depth with respect to the second surface, a third region at third depth deeper than the second depth, a fourth region that contacts the third region, a first contact electrode that contacts the second surface and supplies first voltage to the first region, and a second contact electrode that contacts the third surface and supplies second voltage different from the first voltage to the fourth region. The third surface is located between the second region and the second surface.

Abstract: An apparatus includes pixels each including regions provided in a layer and a microlens. The layer has a first depth, a second depth, and a third depth between the first and second depths in order from a side of a surface facing a surface where the microlens is formed. The layer includes a first portion that separates the regions at the first depth and extends in a first direction, a second portion that separates the regions at the second depth and extends in a second direction, and a third portion that separates the regions at the third depth and extends in a third direction. An angle formed by the first and third portions and less than or equal to 90 degrees is smaller than an angle formed by the first and second portions and less than or equal to 90 degrees.

Abstract: A pixel circuit of a photoelectric conversion device includes two photoelectric conversion elements, each including two impurity region in each of two different layers. In at least one pixel of the pixel circuits, a first separation region separating the two impurity regions in a first layer and a second separation region separating the two impurity regions in a second layer extend in directions different from each other in a planer view. An impurity region in a photoelectric conversion element includes a first portion overlapping the first separation region in the planar view, a second portion adjacent to a first transfer gate, and a third portion located on an opposite side of the second portion with respect to the first portion. The impurity region has a potential distribution monotonically decreasing from the third portion to the second portion for signal charges.

Abstract: A light detection system includes a light detection unit including a plurality of photoelectric conversion portions and a calculation processing unit configured to execute calculation based on information acquired by the light detection unit, wherein the light detection unit acquires light amount distribution information of light based on an incident light beam incident on an object from a laser light source and light amount distribution information of light based on a reflected light beam reflected from the object in a two-dimensional plane, and the calculation processing unit calculates, from the light amount distribution information of light based on the incident light beam, the light amount distribution information of light, and time information, information about a normal vector with respect to a reflection plane of the object, and wherein the normal vector is a vector in three dimensions which includes a direction orthogonal to the two-dimensional plane.

Abstract: A system includes a light source configured to emit pulsed laser light, and a photodetection unit including a plurality of photoelectric conversion units arranged in a two-dimensional plane, wherein an emission timing of the light source and a detection timing of the photodetection unit are controlled by a timing control unit, wherein the photodetection unit detects scattered light on the two-dimensional plane, of the pulsed laser light emitted from the light source and entering an object, and wherein change of a refractive index of the object is estimated from change of light speed of the scattered light.