Abstract: A super junction MOSFET device, including: a substrate having a first conductive type; a buffer layer having the first conductive type and disposed on the substrate; a super junction structure disposed on the buffer layer and including multiple first conductive type pillars and multiple second conductive type pillars alternately arranged in a transverse direction, several second conductive type pillars being partially and/or wholly displaced to provide two or more different transverse dimensions for the first conductive type pillars; a body region having the second conductive type and disposed on a top of the second conductive type pillar; a source structure located within the body region and including a source region having the first conductive type and an ohmic contact region having the second conductive type which contacts with the source region; and a gate structure in contact with the first conductive type pillar and the source structure.

Abstract: A self-balancing super junction structure and a preparation method thereof. The method includes: forming an initial epitaxial layer on a surface of a substrate of a first doping type; respectively forming an implantation region of the first doping type and an implantation region of a second doping type in the initial epitaxial layer; forming an intrinsic epitaxial layer on the surface of the initial epitaxial layer; respectively forming an implantation region of the first doping type and an implantation region of the second doping type in the intrinsic epitaxial layer; and repeating the steps to form a structure with stacked epitaxial layers, and then performing thermal diffusion treatment to form a self-balancing super junction structure. Ions of the first doping type and ions of the second doping type in a same layer of the epitaxial layer stack structure are implanted after a same lithography step.