Abstract: An autonomous mobile device (AMD) moves around a physical space while performing tasks. The AMD may have sensors with fields of view (FOVs) that are forward-facing. As the AMD moves forward, a safe region is determined based on data from those forward-facing sensors. The safe region describes a geographical area clear of obstacles during recent travel. Before moving outside of the current FOV, the AMD determines whether a move outside of the current FOV keeps the AMD within the safe region. For example, if a path that is outside the current FOV would result in the AMD moving outside the safe region, the AMD modifies the path until poses associated with the path result in the AMD staying within the safe region. The resulting safe path may then be used by the AMD to safely move outside the current FOV.

Abstract: A method including performing a first simulation for each of a plurality of different metrology target measurement recipes using a first model, selecting a first group of metrology target measurement recipes from the plurality of metrology target measurement recipes, the first group of metrology target measurement recipes satisfying a first rule, performing a second simulation for each of the metrology target measurement recipes from the first group using a second model, and selecting a second group of metrology target measurement recipes from the first group, the second group of metrology target measurement recipes satisfying a second rule, the first model being less accurate or faster than the second model and/or the first rule being less restrictive than the second rule.

Abstract: A method including computing a multi-variable cost function, the multi-variable cost function representing a metric characterizing a degree of matching between a result when measuring a metrology target structure using a substrate measurement recipe and a behavior of a pattern of a functional device, the metric being a function of a plurality of design variables including a parameter of the metrology target structure, and adjusting the design variables and computing the cost function with the adjusted design variables, until a certain termination condition is satisfied.

Abstract: A method including computing a multi-variable cost function, the multi-variable cost function representing a metric characterizing a degree of matching between a result when measuring a metrology target structure using a substrate measurement recipe and a behavior of a pattern of a functional device, the metric being a function of a plurality of design variables including a parameter of the metrology target structure, and adjusting the design variables and computing the cost function with the adjusted design variables, until a certain termination condition is satisfied.

Abstract: A method including performing a first simulation for each of a plurality of different metrology target measurement recipes using a first model, selecting a first group of metrology target measurement recipes from the plurality of metrology target measurement recipes, the first group of metrology target measurement recipes satisfying a first rule, performing a second simulation for each of the metrology target measurement recipes from the first group using a second model, and selecting a second group of metrology target measurement recipes from the first group, the second group of metrology target measurement recipes satisfying a second rule, the first model being less accurate or faster than the second model and/or the first rule being less restrictive than the second rule.

Abstract: Methods and systems for source multiplexing illumination for mask inspection are disclosed. Such illumination systems enable EUV sources of small brightness to be used for EUV mask defect inspection at nodes below the 22 nm. Utilizing the multiple plane or conic mirrors that are either attached to a continuously rotating base with different angles or individually rotating to position for each pulse, the reflected beams may be directed through a common optical path. The light may then be focused by a condenser to an EUV mask. The reflected and scattered light from the mask may then be imaged by some imaging optics onto some sensors. The mask image may be subsequently processed for defect information.

Abstract: Photoelectron emission mapping systems for use with EUV (extreme ultraviolet) mask inspection and lithography systems are described. The mapping systems may be used to provide photoelectron emission maps for EUV photolithography masks and/or EUV mirrors. The systems use EUV photoelectron sources used for mask inspection or photolithography to impinge EUV light on the masks and/or mirrors. The EUV light generates photoelectron on the surfaces of the mask and/or mirrors and the photoelectrons are collected and analyzed by detectors placed away from optical spaces of the EUV chamber.

Abstract: An extreme ultraviolet (EUM) mask inspection system, comprising a light source to project EUV light along an optical axis, an illumination system to receive the EUV light from the source, the illumination system comprising a spectral purity filter (SPF), the SPF transmits a first portion of the EUV light along the optical axis toward a mask and the SPF comprising a plurality of at least partially reflective elements, said elements reflects a second portion of the EUV light off the optical axis, a projection system adapted to receive the first portion of the EUV light after it has illuminated the mask, a first detector array adapted to receive the image, and a second detector array to receive the second portion of the EUV light. The SPF may comprise one or more multilayer interference-type filters. Alternatively, the SPF comprises a thin film filter disposed on a grazing incidence mirror array.

Abstract: Spectral Purity Filters, or SPFs, are disclosed. Such SPFs are designed to block out the 1030 nm drive laser and other undesired out of band light in a EUV mask inspection system. Different phase grating configurations for near normal incidence and grazing incidence are provided in the present disclosure and are configured specifically for EUV mask inspection.

Abstract: The disclosure is directed to a system and method of providing illumination for reticle inspection. According to various embodiments of the disclosure, a multiplexing mirror system receives pulses of illumination from a plurality of illumination sources and directs the pulses of illumination along an illumination path to a plurality of field mirror facets. The field mirror facets receive at least a portion of illumination from the illumination path and direct at least a portion of the illumination to a plurality of pupil mirror facets. The pupil mirror facets receive at least a portion of illumination reflected from the field mirror facets and direct the portion of illumination along a delivery path to a reticle for imaging and/or defect inspection.

Abstract: The present disclosure is directed to an illumination system. The illumination system may include a base member rotatable about a rotation axis and a plurality of mirrors disposed on an outer surface of the base member along a perimeter of the base member. The mirrors may be oriented at a predetermined angle. The illumination system also includes at least two illumination sources. Each of the mirrors of the first plurality of mirrors is configured to receive radiation from the first illumination source at a first portion of each mirror at a first time. The mirror is configured to reflect the radiation to an optical path. Each of the mirrors is further configured to receive radiation from the second illumination source at a second portion of the mirror at a second time. The mirrors reflect the radiation from the second illumination source to the common optical path.

Abstract: An extreme ultraviolet (EUV) actinic reticle imaging system suitable for discharge produced plasma (DPP) or laser produced plasma (LPP) reticle imaging systems using a thin film coating spectral purity filter (SPF) positioned on or proximate to the EUV imaging sensor; an EUV imaging sensor carrying this SPF; and methods for making and using the SPF for reticle inspection. The coating may be applied to the imaging sensor in any manner suitable for the particular coating selected. The coating may be composed of a single layer or multiple layers. Typical SPF coating materials include zirconium (Zr) and silicon-zirconium (Si/Zr) in a thickness between 10 nm and 100 nm.

Abstract: An extreme ultraviolet (EUM) mask inspection system, comprising a light source to project EUV light along an optical axis, an illumination system to receive the EUV light from the source, the illumination system comprising a spectral purity filter (SPF), the SPF transmits a first portion of the EUV light along the optical axis toward a mask and the SPF comprising a plurality of at least partially reflective elements, said elements reflects a second portion of the EUV light off the optical axis, a projection system adapted to receive the first portion of the EUV light after it has illuminated the mask, a first detector array adapted to receive the image, and a second detector array to receive the second portion of the EUV light. The SPF may comprise one or more multilayer interference-type filters. Alternatively, the SPF comprises a thin film filter disposed on a grazing incidence mirror array.

Abstract: The present invention is a light homogenizer or light tunnel with highly reflective sides that enable the focusing of EUV illumination. The sides of the homogenizer are cut from a highly polished silicon wafer. The wafer is coated with a reflective coating before the strips are cut from the wafer. The invention also includes a method for flattening the strips and applying a backing to the strips enabling easier manipulation of the strips during assembly and use.

Abstract: Spectral Purity Filters, or SPFs, are disclosed. Such SPFs are designed to block out the 1030 nm drive laser and other undesired out of band light in a EUV mask inspection system. Different phase grating configurations for near normal incidence and grazing incidence are provided in the present disclosure and are configured specifically for EUV mask inspection.

Abstract: The present disclosure is directed to an illumination system. The illumination system may include a base member rotatable about a rotation axis and a plurality of mirrors disposed on an outer surface of the base member along a perimeter of the base member. The mirrors may be oriented at a predetermined angle. The illumination system also includes at least two illumination sources. Each of the mirrors of the first plurality of mirrors is configured to receive radiation from the first illumination source at a first portion of each mirror at a first time. The mirror is configured to reflect the radiation to an optical path. Each of the mirrors is further configured to receive radiation from the second illumination source at a second portion of the mirror at a second time. The mirrors reflect the radiation from the second illumination source to the common optical path.

Abstract: Photoelectron emission mapping systems for use with EUV (extreme ultraviolet) mask inspection and lithography systems are described. The mapping systems may be used to provide photoelectron emission maps for EUV photolithography masks and/or EUV mirrors. The systems use EUV photoelectron sources used for mask inspection or photolithography to impinge EUV light on the masks and/or mirrors. The EUV light generates photoelectron on the surfaces of the mask and/or mirrors and the photoelectrons are collected and analyzed by detectors placed away from optical spaces of the EUV chamber.

Abstract: The disclosure is directed to a system and method of providing illumination for reticle inspection. According to various embodiments of the disclosure, a multiplexing mirror system receives pulses of illumination from a plurality of illumination sources and directs the pulses of illumination along an illumination path to a plurality of field mirror facets. The field mirror facets receive at least a portion of illumination from the illumination path and direct at least a portion of the illumination to a plurality of pupil mirror facets. The pupil mirror facets receive at least a portion of illumination reflected from the field mirror facets and direct the portion of illumination along a delivery path to a reticle for imaging and/or defect inspection.

Abstract: An extreme ultraviolet (EUV) actinic reticle imaging system suitable for discharge produced plasma (DPP) or laser produced plasma (LPP) reticle imaging systems using a thin film coating spectral purity filter (SPF) positioned on or proximate to the EUV imaging sensor; an EUV imaging sensor carrying this SPF; and methods for making and using the SPF for reticle inspection. The coating may be applied to the imaging sensor in any manner suitable for the particular coating selected. The coating may be composed of a single layer or multiple layers. Typical SPF coating materials include zirconium (Zr) and silicon-zirconium (Si/Zr) in a thickness between 10 nm and 100 nm.

Abstract: Methods and systems for source multiplexing illumination for mask inspection are disclosed. Such illumination systems enable EUV sources of small brightness to be used for EUV mask defect inspection at nodes below the 22 nm. Utilizing the multiple plane or conic mirrors that are either attached to a continuously rotating base with different angles or individually rotating to position for each pulse, the reflected beams may be directed through a common optical path. The light may then be focused by a condenser to an EUV mask. The reflected and scattered light from the mask may then be imaged by some imaging optics onto some sensors. The mask image may be subsequently processed for defect information.