Patents by Inventor Daimian Wang

Daimian Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190250519
    Abstract: A method including computing a multi-variable cost function, the multi-variable cost function representing a metric characterizing a degree of matching between a result when measuring a metrology target structure using a substrate measurement recipe and a behavior of a pattern of a functional device, the metric being a function of a plurality of design variables including a parameter of the metrology target structure, and adjusting the design variables and computing the cost function with the adjusted design variables, until a certain termination condition is satisfied.
    Type: Application
    Filed: June 1, 2017
    Publication date: August 15, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Ning GU, Daimian WANG, Jen-Shiang WANG
  • Publication number: 20190204750
    Abstract: A method including performing a first simulation for each of a plurality of different metrology target measurement recipes using a first model, selecting a first group of metrology target measurement recipes from the plurality of metrology target measurement recipes, the first group of metrology target measurement recipes satisfying a first rule, performing a second simulation for each of the metrology target measurement recipes from the first group using a second model, and selecting a second group of metrology target measurement recipes from the first group, the second group of metrology target measurement recipes satisfying a second rule, the first model being less accurate or faster than the second model and/or the first rule being less restrictive than the second rule.
    Type: Application
    Filed: August 7, 2017
    Publication date: July 4, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Daimian WANG, Shengrui ZHANG, Chi-Hsiang FAN
  • Patent number: 9625810
    Abstract: Methods and systems for source multiplexing illumination for mask inspection are disclosed. Such illumination systems enable EUV sources of small brightness to be used for EUV mask defect inspection at nodes below the 22 nm. Utilizing the multiple plane or conic mirrors that are either attached to a continuously rotating base with different angles or individually rotating to position for each pulse, the reflected beams may be directed through a common optical path. The light may then be focused by a condenser to an EUV mask. The reflected and scattered light from the mask may then be imaged by some imaging optics onto some sensors. The mask image may be subsequently processed for defect information.
    Type: Grant
    Filed: March 13, 2012
    Date of Patent: April 18, 2017
    Assignee: KLA-Tencor Corporation
    Inventors: Daimian Wang, Daniel Wack, Damon F. Kvamme, Tao-Yi Fu
  • Patent number: 9453801
    Abstract: Photoelectron emission mapping systems for use with EUV (extreme ultraviolet) mask inspection and lithography systems are described. The mapping systems may be used to provide photoelectron emission maps for EUV photolithography masks and/or EUV mirrors. The systems use EUV photoelectron sources used for mask inspection or photolithography to impinge EUV light on the masks and/or mirrors. The EUV light generates photoelectron on the surfaces of the mask and/or mirrors and the photoelectrons are collected and analyzed by detectors placed away from optical spaces of the EUV chamber.
    Type: Grant
    Filed: May 21, 2013
    Date of Patent: September 27, 2016
    Assignee: KLA-Tencor Corporation
    Inventors: Li Wang, Daimian Wang, Yanwei Liu, Alan Michael Aindow
  • Patent number: 9348214
    Abstract: An extreme ultraviolet (EUM) mask inspection system, comprising a light source to project EUV light along an optical axis, an illumination system to receive the EUV light from the source, the illumination system comprising a spectral purity filter (SPF), the SPF transmits a first portion of the EUV light along the optical axis toward a mask and the SPF comprising a plurality of at least partially reflective elements, said elements reflects a second portion of the EUV light off the optical axis, a projection system adapted to receive the first portion of the EUV light after it has illuminated the mask, a first detector array adapted to receive the image, and a second detector array to receive the second portion of the EUV light. The SPF may comprise one or more multilayer interference-type filters. Alternatively, the SPF comprises a thin film filter disposed on a grazing incidence mirror array.
    Type: Grant
    Filed: February 3, 2014
    Date of Patent: May 24, 2016
    Assignee: KLA-Tencor Corporation
    Inventors: Daimian Wang, Li Wang, Frank Chilese, David Alles
  • Patent number: 9151718
    Abstract: The disclosure is directed to a system and method of providing illumination for reticle inspection. According to various embodiments of the disclosure, a multiplexing mirror system receives pulses of illumination from a plurality of illumination sources and directs the pulses of illumination along an illumination path to a plurality of field mirror facets. The field mirror facets receive at least a portion of illumination from the illumination path and direct at least a portion of the illumination to a plurality of pupil mirror facets. The pupil mirror facets receive at least a portion of illumination reflected from the field mirror facets and direct the portion of illumination along a delivery path to a reticle for imaging and/or defect inspection.
    Type: Grant
    Filed: March 1, 2013
    Date of Patent: October 6, 2015
    Assignee: KLA-Tencor Corporation
    Inventors: Daimian Wang, Tao-Yi Fu, Damon F. Kvamme
  • Patent number: 9151881
    Abstract: Spectral Purity Filters, or SPFs, are disclosed. Such SPFs are designed to block out the 1030 nm drive laser and other undesired out of band light in a EUV mask inspection system. Different phase grating configurations for near normal incidence and grazing incidence are provided in the present disclosure and are configured specifically for EUV mask inspection.
    Type: Grant
    Filed: March 5, 2013
    Date of Patent: October 6, 2015
    Assignee: KLA-Tencor Corporation
    Inventors: Daimian Wang, Oleg Khodykin, Daniel Wack, Li Wang, Yanwei Liu
  • Patent number: 8916831
    Abstract: An extreme ultraviolet (EUV) actinic reticle imaging system suitable for discharge produced plasma (DPP) or laser produced plasma (LPP) reticle imaging systems using a thin film coating spectral purity filter (SPF) positioned on or proximate to the EUV imaging sensor; an EUV imaging sensor carrying this SPF; and methods for making and using the SPF for reticle inspection. The coating may be applied to the imaging sensor in any manner suitable for the particular coating selected. The coating may be composed of a single layer or multiple layers. Typical SPF coating materials include zirconium (Zr) and silicon-zirconium (Si/Zr) in a thickness between 10 nm and 100 nm.
    Type: Grant
    Filed: March 13, 2012
    Date of Patent: December 23, 2014
    Assignee: KLA-Tencor Corporation
    Inventor: Daimian Wang
  • Patent number: 8917432
    Abstract: The present disclosure is directed to an illumination system. The illumination system may include a base member rotatable about a rotation axis and a plurality of mirrors disposed on an outer surface of the base member along a perimeter of the base member. The mirrors may be oriented at a predetermined angle. The illumination system also includes at least two illumination sources. Each of the mirrors of the first plurality of mirrors is configured to receive radiation from the first illumination source at a first portion of each mirror at a first time. The mirror is configured to reflect the radiation to an optical path. Each of the mirrors is further configured to receive radiation from the second illumination source at a second portion of the mirror at a second time. The mirrors reflect the radiation from the second illumination source to the common optical path.
    Type: Grant
    Filed: August 1, 2012
    Date of Patent: December 23, 2014
    Assignee: KLA-Tencor Corporation
    Inventors: Daniel Wack, Daimian Wang, Karl R. Umstadter, Ed Ma, Frank Chilese
  • Publication number: 20140217298
    Abstract: An extreme ultraviolet (EUM) mask inspection system, comprising a light source to project EUV light along an optical axis, an illumination system to receive the EUV light from the source, the illumination system comprising a spectral purity filter (SPF), the SPF transmits a first portion of the EUV light along the optical axis toward a mask and the SPF comprising a plurality of at least partially reflective elements, said elements reflects a second portion of the EUV light off the optical axis, a projection system adapted to receive the first portion of the EUV light after it has illuminated the mask, a first detector array adapted to receive the image, and a second detector array to receive the second portion of the EUV light. The SPF may comprise one or more multilayer interference-type filters. Alternatively, the SPF comprises a thin film filter disposed on a grazing incidence mirror array.
    Type: Application
    Filed: February 3, 2014
    Publication date: August 7, 2014
    Applicant: KLA-Tencor Corporation
    Inventors: Daimian Wang, Li Wang, Frank Chilese, David Alles
  • Publication number: 20140151580
    Abstract: The present invention is a light homogenizer or light tunnel with highly reflective sides that enable the focusing of EUV illumination. The sides of the homogenizer are cut from a highly polished silicon wafer. The wafer is coated with a reflective coating before the strips are cut from the wafer. The invention also includes a method for flattening the strips and applying a backing to the strips enabling easier manipulation of the strips during assembly and use.
    Type: Application
    Filed: November 18, 2013
    Publication date: June 5, 2014
    Applicant: KLA-Tencor Corporation
    Inventors: Daimian Wang, Frank Chilese
  • Publication number: 20140131586
    Abstract: Spectral Purity Filters, or SPFs, are disclosed. Such SPFs are designed to block out the 1030 nm drive laser and other undesired out of band light in a EUV mask inspection system. Different phase grating configurations for near normal incidence and grazing incidence are provided in the present disclosure and are configured specifically for EUV mask inspection.
    Type: Application
    Filed: March 5, 2013
    Publication date: May 15, 2014
    Applicant: KLA-TENCOR CORPORATION
    Inventors: Daimian Wang, Oleg Khodykin, Daniel Wack, Li Wang, Yanwei Liu
  • Publication number: 20140036333
    Abstract: The present disclosure is directed to an illumination system. The illumination system may include a base member rotatable about a rotation axis and a plurality of mirrors disposed on an outer surface of the base member along a perimeter of the base member. The mirrors may be oriented at a predetermined angle. The illumination system also includes at least two illumination sources. Each of the mirrors of the first plurality of mirrors is configured to receive radiation from the first illumination source at a first portion of each mirror at a first time. The mirror is configured to reflect the radiation to an optical path. Each of the mirrors is further configured to receive radiation from the second illumination source at a second portion of the mirror at a second time. The mirrors reflect the radiation from the second illumination source to the common optical path.
    Type: Application
    Filed: August 1, 2012
    Publication date: February 6, 2014
    Applicant: KLA-Tencor Corporation
    Inventors: Daniel Wack, Daimian Wang, Karl R. Umstadter, Ed Ma, Frank Chilese
  • Publication number: 20130313442
    Abstract: Photoelectron emission mapping systems for use with EUV (extreme ultraviolet) mask inspection and lithography systems are described. The mapping systems may be used to provide photoelectron emission maps for EUV photolithography masks and/or EUV mirrors. The systems use EUV photoelectron sources used for mask inspection or photolithography to impinge EUV light on the masks and/or mirrors. The EUV light generates photoelectron on the surfaces of the mask and/or mirrors and the photoelectrons are collected and analyzed by detectors placed away from optical spaces of the EUV chamber.
    Type: Application
    Filed: May 21, 2013
    Publication date: November 28, 2013
    Applicant: KLA-Tencor Corporation, a Delaware Corporation
    Inventors: Li Wang, Daimian Wang, Yanwei Liu, Alan Michael Aindow
  • Publication number: 20130242295
    Abstract: The disclosure is directed to a system and method of providing illumination for reticle inspection. According to various embodiments of the disclosure, a multiplexing mirror system receives pulses of illumination from a plurality of illumination sources and directs the pulses of illumination along an illumination path to a plurality of field mirror facets. The field mirror facets receive at least a portion of illumination from the illumination path and direct at least a portion of the illumination to a plurality of pupil mirror facets. The pupil mirror facets receive at least a portion of illumination reflected from the field mirror facets and direct the portion of illumination along a delivery path to a reticle for imaging and/or defect inspection.
    Type: Application
    Filed: March 1, 2013
    Publication date: September 19, 2013
    Applicant: KLA-TENCOR CORPORATION
    Inventors: Daimian Wang, Tao-Yi Fu, Damon F. Kvamme
  • Publication number: 20120235049
    Abstract: An extreme ultraviolet (EUV) actinic reticle imaging system suitable for discharge produced plasma (DPP) or laser produced plasma (LPP) reticle imaging systems using a thin film coating spectral purity filter (SPF) positioned on or proximate to the EUV imaging sensor; an EUV imaging sensor carrying this SPF; and methods for making and using the SPF for reticle inspection. The coating may be applied to the imaging sensor in any manner suitable for the particular coating selected. The coating may be composed of a single layer or multiple layers. Typical SPF coating materials include zirconium (Zr) and silicon-zirconium (Si/Zr) in a thickness between 10 nm and 100 nm.
    Type: Application
    Filed: March 13, 2012
    Publication date: September 20, 2012
    Applicant: KLA-TENCOR CORPORATION
    Inventor: Daimian Wang
  • Publication number: 20120236281
    Abstract: Methods and systems for source multiplexing illumination for mask inspection are disclosed. Such illumination systems enable EUV sources of small brightness to be used for EUV mask defect inspection at nodes below the 22 nm. Utilizing the multiple plane or conic mirrors that are either attached to a continuously rotating base with different angles or individually rotating to position for each pulse, the reflected beams may be directed through a common optical path. The light may then be focused by a condenser to an EUV mask. The reflected and scattered light from the mask may then be imaged by some imaging optics onto some sensors. The mask image may be subsequently processed for defect information.
    Type: Application
    Filed: March 13, 2012
    Publication date: September 20, 2012
    Applicant: KLA-TENCOR CORPORATION
    Inventors: Daimian Wang, Daniel Wack, Damon F. Kvamme, Tao-Yi Fu