Abstract: A wiring-forming member 1 includes an adhesive layer 10 containing conductive particles 12, and a metal layer 20 disposed on the adhesive layer 10. The adhesive layer 10 includes a first adhesive layer 15 containing the conductive particles 12 and an adhesive component, and a second adhesive layer 16 containing an adhesive component.

Abstract: A piezoelectric element includes a substrate having a first surface with a predetermined orientation; a lower electrode layered on the first surface of the substrate; a piezoelectric thin film layered on the lower electrode and having a piezoelectric body; and an upper electrode layered on the piezoelectric thin film. A voltage is to be impressed between the lower electrode and the upper electrode to deform the piezoelectric thin film. The piezoelectric thin film is epitaxially grown on the lower electrode using a physical vapor deposition or a chemical vapor deposition.

Abstract: A piezoelectric element includes a substrate having a first surface with a predetermined orientation; a lower electrode layered on the first surface of the substrate; a piezoelectric thin film layered on the lower electrode and having a piezoelectric body; and an upper electrode layered on the piezoelectric thin film. A voltage is to be impressed between the lower electrode and the upper electrode to deform the piezoelectric thin film. The piezoelectric thin film is epitaxially grown on the lower electrode using a physical vapor deposition or a chemical vapor deposition.

Abstract: An object of the present invention is to provide a ferroelectric element having excellent properties, which includes a monocrystalline film of ?-Al2O3 formed as a buffer layer on a silicon substrate. The monocrystalline ?-Al2O film is formed on the silicon substrate which is the lowermost layer of an MFMIS structure. On the monocrystalline ?-Al2O3 film, there is formed an electrically conductive oxide in the form of a LaNiO3 film as a lower electrode. On the LaNiO3 film, there is formed a PZT thin film which is a ferroelectric material. On the PZT thin film, there is formed a Pt film as an upper electrode.

Abstract: An object of the present invention is to provide a ferroelectric element having excellent properties, which includes a monocrystalline film of ?-Al2O3 formed as a buffer layer on a silicon substrate. The monocrystalline ?-Al2O3 film 6 is formed on the silicon substrate 4 which is the lowermost layer of an MFMIS structure 2. On the monocrystalline ?-Al2O3 film 6, there is formed an electrically conductive oxide in the form of a LaNiO3 film 8 as a lower electrode. On the LaNiO3 film 8, there is formed a PZT thin film 10 which is a ferroelectric material. ON the PZT thin film 10, there is formed a Pt film as an upper electrode.

Abstract: A semiconductor element, a semiconductor sensor, and a semiconductor memory element are provided, in which an MFMIS structure having a lower electrode and an integrated circuit can be integrated. An epitaxially grown ?-Al2O3 single crystal film (2) is disposed on a semiconductor single crystal substrate (1), and an epitaxial single crystal Pt thin film (3) is disposed on the ?-Al2O3 single crystal film (2).

Abstract: An integrated device including a sensor and the like formed on a ?-alumina layer epitaxially grown on a silicon substrate is provided at low cost. This integrated device includes: a silicon substrate; a first function area formed on a ?-alumina film epitaxially grown on a portion of the silicon substrate; a second function area formed on an area of the silicon substrate other than an area where the ?-alumina film is grown; and wiring means for connecting the first function area with the second function area.

Abstract: A semiconductor element, a semiconductor sensor, and a semiconductor memory element are provided, in which an MFMIS structure having a lower electrode and an integrated circuit can be integrated. An epitaxially grown ?-Al2O3 single crystal film (2) is disposed on a semiconductor single crystal substrate (1), and an epitaxial single crystal Pt thin film (3) is disposed on the ?-Al2O3 single crystal film (2).