Abstract: A sputtering apparatus of a continuous system that a first target 17a and a second target 17b are arranged to obliquely face a substrate 6 and other targets to form a film while conveying the substrate 6 along a conveying path 15, wherein shields 19a, 19b facing the conveying direction of at least the substrate 6 are provided between the conveying path 15 and the first and second targets 17a, 17b to have therebetween an extended region toward the conveying path 15 in the space between the first target 17a and the second target 17b to enable to obtain a high quality film and to enable to prevent particles from diffusing in a chamber 3.

Abstract: A film manufacturing apparatus includes a feed device, a take-up device, and a processing unit to perform a predetermined process for a film. The feed device, the take-up device, and the processing unit are arranged in vacuum chambers having opening portions through which a film can pass. Each opening portion includes a gate valve that can hermitically seal the vacuum chamber by sealing the film while clamping it. A recess portion is formed in the seal member of the valve body of each gate valve. The recess portion has a linear portion that is a size larger than the width of the film in a direction perpendicular to the transport direction of the film and the moving direction of the valve body.

Abstract: A sputtering apparatus of a continuous system that a first target 17a and a second target 17b are arranged to obliquely face a substrate 6 and other targets to form a film while conveying the substrate 6 along a conveying path 15, wherein shields 19a, 19b facing the conveying direction of at least the substrate 6 are provided between the conveying path 15 and the first and second targets 17a, 17b to have therebetween an extended region toward the conveying path 15 in the space between the first target 17a and the second target 17b to enable to obtain a high quality film and to enable to prevent particles from diffusing in a chamber 3.

Abstract: A sputtering apparatus is equipped with a vacuum enclosure 11, a pumping mechanism 18 that evacuates the interior of the vacuum enclosure, magnetron cathodes 12a and 12b to which are attached targets 14, a gas feed mechanism 19 that feeds sputtering gas, and a substrate transfer mechanism. An electrical discharge is generated in the vicinity of the targets, thereby sputtering the targets, and sputter deposition is performed on substrates 15 that pass by facing onto the target surfaces. The magnetron cathodes are equipped with magnetron magnetic circuits 32, which are able to move, and the magnetron magnetic circuits are equipped with magnetron reciprocating mechanisms 33 including a left-right reciprocating part that reciprocates in the substrate transfer direction, which is parallel to the target surface, and an up-down reciprocating part that reciprocates in a direction perpendicular to the substrate transfer direction.