Abstract: A semiconductor memory device includes: a core unit including first and second memory cell groups; and a control circuit. The control circuit is configured to, in response to a read command including designation of a first address and designation of a second address, read first data from the first memory cell group, read second data from the second memory cell group, and output third data and fourth data in parallel. The first and second addresses correspond to the first and second memory cell groups, respectively. The designation of the second address is made after the designation of the first address. The third data corresponds to the read first data. The fourth data corresponds to the read second data.

Abstract: According to an embodiment, a memory system comprising: a non-volatile memory including a plurality of memory cells each capable of storing at least a first bit and a second bit, and configured to calculate third soft bit data based on a logical sum calculation using at least first soft bit data corresponding to the first bit and second soft bit data corresponding to the second bit; and a memory controller configured to restore the first soft bit data and the second soft bit data based on at least first hard bit data corresponding to the first bit, second hard bit data corresponding to the second bit, and the third soft bit data.

Abstract: A semiconductor memory device includes: a core unit including first and second memory cell groups; and a control circuit. The control circuit is configured to, in response to a read command including designation of a first address and designation of a second address, read first data from the first memory cell group, read second data from the second memory cell group, and output third data and fourth data in parallel. The first and second addresses correspond to the first and second memory cell groups, respectively. The designation of the second address is made after the designation of the first address. The third data corresponds to the read first data. The fourth data corresponds to the read second data.

Abstract: A non-volatile memory of an embodiment includes: a memory cell array including a plurality of memory cell transistors; a plurality of word lines connected to a plurality of gates of the plurality of respective memory cell transistors; a VPGM monitor connected to at least one of the plurality of word lines; and a sequencer. When writing voltage is applied to a selected word line selected from among the plurality of word lines at data writing to the memory cell array, the sequencer detects voltage of the selected word line through the VPGM monitor and determines whether detected voltage obtained through the detection has reached a predetermined value.

Abstract: A semiconductor storage device of an embodiment includes a control circuit configured to execute a writing sequence in which a loop including a program operation that writes data to memory cells and a program verify operation that verifies the data written in the memory cells is repeated a plurality of times by increasing a program voltage by a predetermined step-up voltage each time, the control circuit being capable of executing reading verify that verifies the data written in the memory cells in the writing sequence, and the control circuit detects characteristic variation of a characteristic that causes disturbance, and determines whether to perform the reading verify based on a result of the detection.

Abstract: A method for controlling a memory system, including a controller chip and a non-volatile memory chip which includes a calibration control circuit, a first output buffer, and a first resistance element, includes receiving a read command from the controller, setting a ready/busy signal to a busy state based on the read command, executing a calibration operation which controls an impedance of the first output buffer based on the read command, setting the ready/busy signal to a ready state, and sending data to the control chip in response to the read command. The calibration control circuit calibrates the impedance of the first output buffer circuit by using the first resistance element within a period in which the ready/busy signal is the busy state.

Abstract: A semiconductor storage device of an embodiment includes a control circuit configured to execute a writing sequence in which a loop including a program operation that writes data to memory cells and a program verify operation that verifies the data written in the memory cells is repeated a plurality of times by increasing a program voltage by a predetermined step-up voltage each time, the control circuit being capable of executing reading verify that verifies the data written in the memory cells in the writing sequence, and the control circuit detects characteristic variation of a characteristic that causes disturbance, and determines whether to perform the reading verify based on a result of the detection.

Abstract: A semiconductor memory device includes a memory transistor, a word line, a peripheral circuit, and electrodes connected to the peripheral circuit. In response to a write command via the electrodes, the peripheral circuit can execute a first program operation of applying a first program voltage to the word line one time when the write command is one of an n1-th write command to an n2-th write command corresponding to the memory transistor; and execute a second program operation of applying a second program voltage to the first word line at least one time when the write command is one of an (n2+1)-th write command to an n3-th write command corresponding to the memory transistor. The second program voltage in a k-th second program operation is less than the first program voltage in a k-th first program operation.

Abstract: A semiconductor memory device includes a memory transistor, a word line, a peripheral circuit, and electrodes connected to the peripheral circuit. In response to a write command via the electrodes, the peripheral circuit can execute a first program operation of applying a first program voltage to the word line one time when the write command is one of an n1-th write command to an n2-th write command corresponding to the memory transistor; and execute a second program operation of applying a second program voltage to the first word line at least one time when the write command is one of an (n2+1)-th write command to an n3-th write command corresponding to the memory transistor. The second program voltage in a k-th second program operation is less than the first program voltage in a k-th first program operation.

Abstract: A method for controlling a memory system, including a controller chip and a non-volatile memory chip which includes a calibration control circuit, a first output buffer, and a first resistance element, includes receiving a read command from the controller, setting a ready/busy signal to a busy state based on the read command, executing a calibration operation which controls an impedance of the first output buffer based on the read command, setting the ready/busy signal to a ready state, and sending data to the control chip in response to the read command. The calibration control circuit calibrates the impedance of the first output buffer circuit by using the first resistance element within a period in which the ready/busy signal is the busy state.

Abstract: A method for controlling a memory system, including a controller chip and a non-volatile memory chip which includes a calibration control circuit, a first output buffer, and a first resistance element, includes receiving a read command from the controller, setting a ready/busy signal to a busy state based on the read command, executing a calibration operation which controls an impedance of the first output buffer based on the read command, setting the ready/busy signal to a ready state, and sending data to the control chip in response to the read command. The calibration control circuit calibrates the impedance of the first output buffer circuit by using the first resistance element within a period in which the ready/busy signal is the busy state.

Abstract: A method for controlling a memory system, including a controller chip and a non-volatile memory chip which includes a calibration control circuit, a first output buffer, and a first resistance element, includes receiving a read command from the controller, setting a ready/busy signal to a busy state based on the read command, executing a calibration operation which controls an impedance of the first output buffer based on the read command, setting the ready/busy signal to a ready state, and sending data to the control chip in response to the read command. The calibration control circuit calibrates the impedance of the first output buffer circuit by using the first resistance element within a period in which the ready/busy signal is the busy state.

Abstract: According to one embodiment, a semiconductor device includes: a first memory cell provided in a first semiconductor chip; a first output buffer circuit configured to output data of the first memory cell outside, the first output buffer circuit provided in the first semiconductor chip; a first calibration control circuit configured to calibrate an impedance of the first output buffer circuit, a first terminal connected to the first calibration control circuit, the first calibration control circuit provided in the first semiconductor chip; and a first resistance element connected to the first terminal, the first resistance element provided in the first semiconductor chip.

Abstract: A semiconductor memory device includes first and second planes, first and second latch circuits for the first plane of memory cells, wherein data stored in the first latch circuit is transferred to the first plane of memory cells via the second latch circuit, third and fourth latch circuits for the second plane of memory cells, wherein data stored in the third latch circuit is transferred to the second plane of memory cells via the fourth latch circuit, and a control circuit configured to perform a sequence of operations in response to commands, the sequence of operations including a first operation to transfer first data associated with the commands from the first latch circuit to the second latch circuit and, concurrently with the first operation, a second operation to transfer second data associated with the commands into the third latch circuit.

Abstract: According to one embodiment, a semiconductor device includes: a first memory cell provided in a first semiconductor chip; a first output buffer circuit configured to output data of the first memory cell outside, the first output buffer circuit provided in the first semiconductor chip; a first calibration control circuit configured to calibrate an impedance of the first output buffer circuit, a first terminal connected to the first calibration control circuit, the first calibration control circuit provided in the first semiconductor chip; and a first resistance element connected to the first terminal, the first resistance element provided in the first semiconductor chip.

Abstract: A semiconductor memory device includes a memory cell array, first and second data caches, and a control circuit. The control circuit is configured to control, with use of the first and second data caches, a read operation of reading data from the selected memory cell of the memory cell array, and a write operation of writing data in the selected memory cell of the memory cell array. The control circuit is configured to execute, at a time of the read operation, an arithmetic operation of the data held in the first data cache by using the first and second data caches, and to generate the data which is to be written in the selected memory cell.

Abstract: A semiconductor storage device according to an embodiment includes multiple memory cells which electrically rewrite data, a well control circuit which outputs an erasure voltage to be applied to a well through an output terminal, a first pump circuit which outputs a voltage set by boosting an input voltage to the output terminal, a second pump circuit which outputs a voltage set by boosting the input voltage to the output terminal and outputs a voltage higher than an output voltage of the first pump circuit, a pump switching detecting circuit which outputs an assist signal to perform a boosting operation on at least one of the first pump circuit and the second pump circuit and an erase pulse control circuit which sets target voltages of the first pump circuit and the second pump circuit, on the basis of setting values to set a target voltage of the erasure voltage.

Abstract: A semiconductor storage device according to an embodiment includes a plurality of memory cells which electrically rewrite data by controlling the amount of charges accumulated in a floating gate formed on a well through a tunnel insulating film. The semiconductor storage device includes a well control circuit which outputs an erasure voltage to be applied to the well through an output terminal. The semiconductor storage device includes a first pump circuit which outputs a voltage set by boosting an input voltage to the output terminal. The semiconductor storage device includes a second pump circuit which outputs a voltage set by boosting the input voltage to the output terminal and outputs a voltage higher than an output voltage of the first pump circuit. The semiconductor storage device includes a pump switching detecting circuit which outputs an assist signal to perform a boosting operation on at least one of the first pump circuit and the second pump circuit.

Abstract: According to one embodiment, a semiconductor memory device includes a memory cell array, first and second data caches, and a control circuit. The control circuit is configured to control, with use of the first and second data caches, a read operation of reading data from the selected memory cell of the memory cell array, and a write operation of writing data in the selected memory cell of the memory cell array. The control circuit is configured to execute, at a time of the read operation, an arithmetic operation of the data held in the first data cache by using the first and second data caches, and to generate the data which is to be written in the selected memory cell.

Abstract: A semiconductor memory which includes a semiconductor substrate, a plurality of memory cells, and a plurality of active regions disposed in the substrate between adjacent ones of the memory cells. At least two contact electrodes are disposed between adjacent ones of the memory cells and each being connected to one of the active regions, and a contact member is connected to one of the contact electrodes and extending over a gate electrode of a memory cell disposed adjacent to the one contact electrode. Faults can be detected in the memory cells due to particles located between the various insulator and electrode layers in the gate electrode structure, or between the substrate and the gate insulator of the memory cell.