Abstract: A measuring instrument including: a camera that captures an image of a living body at a distance from the living body, the camera including an imaging element including: a group of first pixels that exhibit a peak sensitivity wavelength of greater than or equal to 620 nm and less than or equal to 740 nm; and a group of second pixels including a group of pixels of at least one color, the second pixels exhibiting a peak sensitivity wavelength of either less than or equal to 600 nm or greater than or equal to 760 nm, the group of first pixels having a total light-receiving area that is larger than a total light-receiving area of a group of pixels of each color; and a processing unit that processes a signal representing quantities of light received by the group of first pixels and the group of second pixels.

Abstract: A measuring instrument includes: a camera that captures an image of a living body at a distance from the living body, the camera including an imaging element including: a plurality of types of first pixels that respectively exhibit a plurality of mutually different first peak sensitivity wavelengths of either less than or equal to 600 nm or greater than or equal to 760 nm; and a second pixel that exhibits a second peak sensitivity wavelength of greater than or equal to 620 nm and less than or equal to 740 nm; and a processing unit that acquires pulse waves from a plurality of first signals respectively representing quantities of light received by the plurality of types of first pixels and also from a second signal representing a quantity of light received by the second pixel and that acquires an oxygen saturation level of the living body from the pulse waves.

Abstract: A solid-state imaging element synthesizes luminance signals and chrominance signals to obtain an image. The solid-state imaging element includes a plurality of first pixels and a plurality of second pixels. Each of the plurality of second pixels has a spectral response characteristic in white. The solid-state imaging element generates the chrominance signals, using output signals from the plurality of first pixels. The solid-state imaging element generates the luminance signals, using output signals from the plurality of second pixels, without using the output signals from the plurality of first pixels.

Abstract: A biometric information measurement device includes: a layered film including a plurality of layered layers including two or more types of layers having different refractive indices; and a light receiving element configured to receive light transmitted through the layered film and generate a signal corresponding to the light.

Abstract: A biological information acquisition device includes a near-infrared light source, a solid-state image sensor, and an information processing device, wherein the solid-state image sensor includes at least one specific pixel having a sensitivity peak in a specific wavelength band of 620 nm or more and 1100 nm or less, the information processing device is configured to repeatedly acquire (i) an emission image frame captured by the solid-state image sensor during an emission period of the near-infrared light source and (ii) a non-emission image frame captured by the solid-state image sensor during a non-emission period of the near-infrared light source, and the information processing device is configured to derive biological information on the basis of the emission image frame and the non-emission image frame.

Abstract: A biometric information acquiring apparatus that acquires biometric information of a living body, the biometric information acquiring apparatus includes: a light-receiving element configured to receive light arriving from the living body and generate a light reception signal; and an analysis device configured to analyze the light reception signal, wherein the light-receiving element includes a first light-receiving element configured to receive first light having an intensity peak in a first wavelength band of 620 nm or more and 740 nm or less, and the light-receiving element further includes at least one of (i) a second light-receiving element configured to receive second light having an intensity peak in a second wavelength band of 370 nm or more and 600 nm or less, or (ii) a third light-receiving element configured to receive third light having an intensity peak in a third wavelength band of 760 nm or more and 1100 nm or less.

Abstract: A solid-state imaging element synthesizes luminance signals and chrominance signals to obtain an image. The solid-state imaging element includes a plurality of first pixels and a plurality of second pixels. Each of the plurality of second pixels has a spectral response characteristic in white. The solid-state imaging element generates the chrominance signals, using output signals from the plurality of first pixels. The solid-state imaging element generates the luminance signals, using output signals from the plurality of second pixels, without using the output signals from the plurality of first pixels.

Abstract: A signal processing apparatus 100 is achieved, capable of processing an analog pixel signal Ag obtained by photoelectric conversion in a CCD image sensor 1 such that noise will be reduced and S/N will be improved by interpolation in an area with low brightness or saturation on a display screen and resolution will be increased by edge emphasis in an area with high brightness or saturation on the display screen. The signal processing apparatus 100 for performing A/D conversion on the analog pixel signal Ag from the CCD image sensor 1, comprises an interpolation processing section 104 for adaptively switching interpolation processing for determining brightness or saturation of pixels for each pixel, and calculating a digital pixel signal of a target pixel from pixel signals of peripheral pixels positioned in the periphery of the target pixel based on the determined brightness or saturation of the target pixel.

Abstract: Provided is a solid-state imaging element for effectively reducing a dark current. The solid-state imaging element includes a substrate 10 formed of semiconductor and having a plurality of pixel regions, a plurality of storage units 11 arranged in the respective pixel regions in the substrate 10, formed of semiconductor having a conductivity type opposite to the substrate 10, and configured to store a charge having a first polarity and generated by photoelectric conversion, and a fixed charge layer 14a provided above at least one substrate surface 102 and having a first fixed charge E. A density of accumulation charges h having a polarity opposite to the first fixed charge E in the substrate surface 102 varies based on an arrangement of the pixel regions or an arrangement of the storage units, with respect to a direction parallel to the substrate surface 102.

Abstract: A signal processing apparatus 100 is achieved, capable of processing an analog pixel signal Ag obtained by photoelectric conversion in a CCD image sensor 1 such that noise will be reduced and S/N will be improved by interpolation in an area with low brightness or saturation on a display screen and resolution will be increased by edge emphasis in an area with high brightness or saturation on the display screen. The signal processing apparatus 100 for performing A/D conversion on the analog pixel signal Ag from the CCD image sensor 1, comprises an interpolation processing section 104 for adaptively switching interpolation processing for determining brightness or saturation of pixels for each pixel, and calculating a digital pixel signal of a target pixel from pixel signals of peripheral pixels positioned in the periphery of the target pixel based on the determined brightness or saturation of the target pixel.

Abstract: Provided is a solid-state imaging element that effectively reduces 1/f noise from a signal output from a source-follower transistor. The solid-state imaging element includes a first conductivity type substrate 10, a photodiode in which carriers are accumulated in a second conductivity type accumulation region, the second conductivity type being different from the first conductivity type, a source-follower transistor 15 which has a gate electrode 151 electrically connected to a floating diffusion region accumulated with the carriers read out from the photodiode and which is provided with a second conductivity type buried channel, and an element separator 21 which is provided around an active region of the photodiode and the source-follower transistor 15. The buried channel of the source-follower transistor 15 is formed away from a sidewall of the element separator 21.

Abstract: A solid-state imaging element according to the present invention includes a plurality of light receiving sections formed in a pixel array, each light receiving section constituted of a semiconductor element for performing a photoelectric conversion on and capturing an image of image light from a subject, the solid-state imaging element further including: a light shielding wall or a reflection wall provided therein for pixel separation, in between the light receiving sections adjacent to one another in a plan view on a light entering side from the light receiving sections; and a color filter wherein at least a part of the color filter is embedded between the light shielding walls or the reflection walls, in such a manner to correspond to each of the plurality of light receiving sections, so that the distance between the color filter and a substrate can be shortened.

Abstract: A solid-state image capturing device is provided. In the solid-state image capturing device, at least any of openings of electrode wiring layers, color filters and microlenses are provided on a light incident side above light receiving elements as a light receiving region in which the plurality of light receiving elements are disposed on a semiconductor substrate or a semiconductor region provided on a substrate, wherein a shift amount of at least any of the openings of the electrode wiring layers, the color filters and the microlenses in relation to the light receiving elements or in relation to a standard position where a light flux is desired to pass through is calculated by Snell's law based on an incident angle ?0 of a light flux entering the light receiving region to a surface of the solid-state image capturing device.

Abstract: A solid-state image capturing device is provided. In the solid-state image capturing device, at least any of openings of electrode wiring layers, color filters and microlenses are provided on a light incident side above light receiving elements as a light receiving region in which the plurality of light receiving elements are disposed on a semiconductor substrate or a semiconductor region provided on a substrate, wherein a shift amount of at least any of the openings of the electrode wiring layers, the color filters and the microlenses in relation to the light receiving elements or in relation to a standard position where a light flux is desired to pass through is calculated by Snell's law based on an incident angle ?0 of a light flux entering the light receiving region to a surface of the solid-state image capturing device.