Patents by Inventor Daisuke Hanaoka
Daisuke Hanaoka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961917Abstract: Provided is a semiconductor device in which deterioration of electric characteristics which becomes more noticeable as the semiconductor device is miniaturized can be suppressed. The semiconductor device includes a first oxide film, an oxide semiconductor film over the first oxide film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a second oxide film over the oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the second oxide film, and a gate electrode in contact with the gate insulating film. A top end portion of the oxide semiconductor film is curved when seen in a channel width direction.Type: GrantFiled: June 21, 2022Date of Patent: April 16, 2024Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Kazuya Hanaoka, Daisuke Matsubayashi, Yoshiyuki Kobayashi, Shunpei Yamazaki, Shinpei Matsuda
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Publication number: 20230353005Abstract: A drive unit includes first and second rotary electric machines, a first housing that houses the first and second rotary electric machines, a PCU that controls the first rotary electric machine and the second rotary electric machine, and a connector that has a connector terminal for electrically connecting the first and second rotary electric machines and the PCU, and that is fixed to an upper surface of the first housing. The connector includes a base portion that is fixed to the upper surface of the first housing, the connector terminal that is provided at the base portion, an upper seal groove that is provided in the base portion so as to surround the connector terminal and in which a seal member is disposed, and a discharge portion that communicates with the upper seal groove and from which a liquid flowing along the upper seal groove is discharged.Type: ApplicationFiled: April 12, 2023Publication date: November 2, 2023Applicant: HONDA MOTOR CO., LTD.Inventor: Daisuke HANAOKA
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Patent number: 11142057Abstract: A drive unit includes a drive source, a case which is connected to the drive source and accommodates an electric motor, a control device which is mounted on an upper surface of the case and controls the electric motor, and an auxiliary machine placed on an upper surface of the drive source. The drive source and the control device are connected by a reinforcing member, and the reinforcing member is arranged so as to surround at least a part of the auxiliary machine in a top view. According to the drive unit, the vibration of the control device can be suppressed, and the auxiliary machine is protected while the number of parts is reduced.Type: GrantFiled: May 12, 2020Date of Patent: October 12, 2021Assignee: HONDA MOTOR CO., LTD.Inventors: Daisuke Hanaoka, Yuichiro Ueno
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Publication number: 20200361298Abstract: A drive unit includes a drive source, a case which is connected to the drive source and accommodates an electric motor, a control device which is mounted on an upper surface of the case and controls the electric motor, and an auxiliary machine placed on an upper surface of the drive source. The drive source and the control device are connected by a reinforcing member, and the reinforcing member is arranged so as to surround at least a part of the auxiliary machine in a top view. According to the drive unit, the vibration of the control device can be suppressed, and the auxiliary machine is protected while the number of parts is reduced.Type: ApplicationFiled: May 12, 2020Publication date: November 19, 2020Applicant: HONDA MOTOR CO., LTD.Inventors: Daisuke HANAOKA, Yuichiro UENO
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Patent number: 10818954Abstract: An electric component connection mechanism of a fuel cell stack includes a fuel cell stack body, terminal plates, end plates, and a housing. A plurality of fuel cells that generate electricity by electrochemical reaction of a fuel gas and an oxidant gas are stacked in the fuel cell stack body. The terminal plates are disposed on both ends of the fuel cell stack body in a stacking direction of the fuel cells. The end plates are stacked on the terminal plates on the sides opposite to the fuel cell stack body. The terminal plates include terminals that penetrate through and protrude out of the end plates. The terminals are connected to high-voltage cables. Moving mechanisms that support the terminal plates while allowing the terminal plates to advance and retreat in the stacking direction with respect to the end plates are provided.Type: GrantFiled: August 4, 2015Date of Patent: October 27, 2020Assignee: HONDA MOTOR CO., LTD.Inventors: Yusuke Goto, Hiroo Yamaguchi, Daisuke Hanaoka
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Publication number: 20160043427Abstract: An electric component connection mechanism of a fuel cell stack includes a fuel cell stack body, terminal plates, end plates, and a housing. A plurality of fuel cells that generate electricity by electrochemical reaction of a fuel gas and an oxidant gas are stacked in the fuel cell stack body. The terminal plates are disposed on both ends of the fuel cell stack body in a stacking direction of the fuel cells. The end plates are stacked on the terminal plates on the sides opposite to the fuel cell stack body. The terminal plates include terminals that penetrate through and protrude out of the end plates. The terminals are connected to high-voltage cables. Moving mechanisms that support the terminal plates while allowing the terminal plates to advance and retreat in the stacking direction with respect to the end plates are provided.Type: ApplicationFiled: August 4, 2015Publication date: February 11, 2016Applicant: HONDA MOTOR CO., LTD.Inventors: Yusuke GOTO, Hiroo YAMAGUCHI, Daisuke HANAOKA
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Patent number: 8335242Abstract: Provided is a semiconductor laser device that is free from or suffers less from deterioration resulting from a surge or that is less likely to suffer from deterioration resulting from a surge. The semiconductor laser device has a conductive stem 101, a submount 102 fixed to the stem 101, a nitride semiconductor laser chip 103 mounted on the submount 102, pins 104 and 105 fixed to the stem 101 but insulated therefrom, a wire connecting the pin 104 to a p-electrode of the nitride semiconductor laser chip 103, a wire connecting the pin 105 to an n-electrode of the nitride semiconductor laser chip 103, and a cap 106 enclosing the nitride semiconductor laser chip 103 and the submount 102 and fixed to the stem 101.Type: GrantFiled: January 21, 2005Date of Patent: December 18, 2012Assignee: Sharp Kabushiki KaishaInventors: Shigetoshi Ito, Daisuke Hanaoka
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Patent number: 8287760Abstract: A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.Type: GrantFiled: February 22, 2010Date of Patent: October 16, 2012Assignee: Sharp Kabushiki KaishaInventors: Masaya Ishida, Tatsuya Morioka, Daisuke Hanaoka, Mototaka Taneya, Shigeo Fujita, Yoichi Kawakami, Masafumi Harada, Takatomo Sasaki, Yusuke Mori
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Publication number: 20120220122Abstract: Provided are a nitride semiconductor device and a manufacturing method thereof. The nitride semiconductor device includes an insulating layer and a metal layer formed on a nitride semiconductor layer. The insulating layer makes contact with the nitride semiconductor layer. A separation preventing layer is formed between the insulating layer and the metal layer so as to make contact with each of these layers. The separation preventing layer has, as a main component, at least one kind of oxide of a metal selected from the group consisting of tungsten, molybdenum, chromium, titanium, nickel, hafnium, zinc, indium and yttrium.Type: ApplicationFiled: May 10, 2012Publication date: August 30, 2012Inventors: Daisuke HANAOKA, Masafumi KONDO, Susumu OHMI, Kunihiro TAKATANI, Yoshika KANEKO
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Patent number: 8253240Abstract: A cap member capable of alleviating degradation of reliability and improving fabrication yields is provided. The cap member has a cylindrical side wall portion, a top face portion closing one end of the side wall portion and having a light exit hole formed therein to allow extraction of laser light from a semiconductor laser chip; a light transmission window fitted to the top face portion to stop the light exit hole, and a flange portion arranged at the other end of the side wall portion and welded on the upper face of a stem on which the semiconductor laser chip is mounted. A groove portion is formed in an inner surface of the top face portion, and this groove portion makes part of the top face portion in a predetermined region less thick than the other part thereof.Type: GrantFiled: November 24, 2008Date of Patent: August 28, 2012Assignee: Sharp Kabushiki KaishaInventors: Masaya Ishida, Daisuke Hanaoka, Takeshi Horiguchi
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Patent number: 8203152Abstract: The nitride semiconductor device includes an insulating layer and a metal layer formed on a nitride semiconductor layer. The insulating layer makes contact with the nitride semiconductor layer. A separation preventing layer is formed between the insulating layer and the metal layer so as to make contact with each of these layers. The separation preventing layer includes, as a main component, at least one oxide of a metal selected from a group of metals consisting of tungsten, molybdenum, chromium, titanium, nickel, hafnium, zinc, indium and yttrium.Type: GrantFiled: October 27, 2005Date of Patent: June 19, 2012Assignee: Sharp Kabushiki KaishaInventors: Daisuke Hanaoka, Masafumi Kondo, Susumu Ohmi, Kunihiro Takatani, Yoshika Kaneko
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Publication number: 20110174288Abstract: A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean.Type: ApplicationFiled: March 30, 2011Publication date: July 21, 2011Inventors: Daisuke Hanaoka, Masaya Ishida, Atsushi Ogawa, Yoshihiko Tani, Takuro Ishikura
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Patent number: 7939433Abstract: A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean.Type: GrantFiled: February 16, 2010Date of Patent: May 10, 2011Assignee: Sharp Kabushiki KaishaInventors: Daisuke Hanaoka, Masaya Ishida, Atsushi Ogawa, Yoshihiko Tani, Takuro Ishikura
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Patent number: 7833834Abstract: A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean.Type: GrantFiled: September 29, 2005Date of Patent: November 16, 2010Assignee: Sharp Kabushiki KaishaInventors: Daisuke Hanaoka, Masaya Ishida, Atsushi Ogawa, Yoshihiko Tani, Takuro Ishikura
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Patent number: 7790484Abstract: A method for manufacturing a laser device includes fixing a laser chip to a holder via a metal having a low melting point by melting the metal at a temperature higher than the melting point, heating the holder to which the laser chip is fixed at a heat treatment temperature that is lower than the melting point and, thereafter, sealing the laser chip by covering the holder to which the laser chip is fixed with a cap. The heating step may be performed in an atmosphere in which ozone is generated or an atmosphere in which oxygen plasma is generated. Furthermore, the holder to which the laser chip is fixed is covered with a cap to make a hermetically sealed package in dry air or an inert gas, and then an ultraviolet ray is irradiated into the package while it is heated.Type: GrantFiled: June 6, 2006Date of Patent: September 7, 2010Assignee: Sharp Kabushiki KaishaInventors: Masaya Ishida, Atsushi Ogawa, Daisuke Hanaoka
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Publication number: 20100197056Abstract: A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean.Type: ApplicationFiled: February 16, 2010Publication date: August 5, 2010Inventors: Daisuke Hanaoka, Masaya Ishida, Atsushi Ogawa, Yoshihiko Tani, Takuro Ishikura
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Publication number: 20100148120Abstract: A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.Type: ApplicationFiled: February 22, 2010Publication date: June 17, 2010Applicant: SHARP KABUSHIKI KAISHAInventors: Masaya ISHIDA, Tatsuya Morioka, Daisuke Hanaoka, Mototaka Taneya, Shigeo Fujita, Yoichi Kawakami, Masafumi Harada, Takamoto Sasaki, Yusuke Mori
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Patent number: 7700001Abstract: A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.Type: GrantFiled: March 10, 2008Date of Patent: April 20, 2010Assignee: Sharp Kabushiki KaishaInventors: Masaya Ishida, Tatsuya Morioka, Daisuke Hanaoka, Mototaka Taneya, Shigeo Fujita, Yoichi Kawakami, Masafumi Harada, Takatomo Sasaki, Yusuke Mori
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Patent number: 7691729Abstract: A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor, laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean.Type: GrantFiled: August 16, 2007Date of Patent: April 6, 2010Assignee: Sharp Kabushiki KaishaInventors: Daisuke Hanaoka, Masaya Ishida, Atsushi Ogawa, Yoshihiko Tani, Takuro Ishikura
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Patent number: D904261Type: GrantFiled: June 26, 2019Date of Patent: December 8, 2020Assignee: Nissan Motor Co., Ltd.Inventors: Daisuke Hanaoka, Hideki Tago, Shingo Takeda