Patents by Inventor Daisuke Hanawa

Daisuke Hanawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reverse current preventing circuit and power source switching apparatus
    Patent number: 8183715
    Abstract: A reverse current preventing circuit of an N channel type switching MOS transistor connected between a voltage input terminal and an output terminal to control a conduction state between the voltage input terminal and the output terminal, the circuit comprises: a first MOS transistor connected between a substrate of the switching MOS transistor and a ground point; and a second MOS transistor connected between the substrate of the switching MOS transistor and a point having a piece of predetermined constant potential higher than that of the ground point, wherein the piece of predetermined constant potential higher than that of the ground point is applied to the substrate of the switching MOS transistor while the switching MOS transistor is made to be in its on-state, and ground potential is applied to the substrate of the switching MOS transistor while the switching MOS transistor is made to be in its off-state.
    Type: Grant
    Filed: March 4, 2010
    Date of Patent: May 22, 2012
    Assignee: Mitsumi Electric Co., Ltd.
    Inventors: Daisuke Hanawa, Osamu Kawagoe, Tomiyuki Nagai, Hitoshi Tabuchi
  • REVERSE CURRENT PREVENTING CIRCUIT AND POWER SOURCE SWITCHING APPARATUS
    Publication number: 20100225169
    Abstract: A reverse current preventing circuit of an N channel type switching MOS transistor connected between a voltage input terminal and an output terminal to control a conduction state between the voltage input terminal and the output terminal, the circuit comprises: a first MOS transistor connected between a substrate of the switching MOS transistor and a ground point; and a second MOS transistor connected between the substrate of the switching MOS transistor and a point having a piece of predetermined constant potential higher than that of the ground point, wherein the piece of predetermined constant potential higher than that of the ground point is applied to the substrate of the switching MOS transistor while the switching MOS transistor is made to be in its on-state, and ground potential is applied to the substrate of the switching MOS transistor while the switching MOS transistor is made to be in its off-state.
    Type: Application
    Filed: March 4, 2010
    Publication date: September 9, 2010
    Applicant: MITSUMI ELECTRIC CO., LTD.
    Inventors: Daisuke Hanawa, Osamu Kawagoe, Tomiyuki Nagai, Hitoshi Tabuchi