Abstract: Provided is a solid-state battery in which single cell bodies as a solid-state thin film battery are more suitably stacked. In the solid-state battery technology, an adhesive layer is provided between a plurality of stacked single cell bodies and the adhesive layer is configured to cover each cell element portion.

Abstract: There is provided an insulated wire including: a conductor wire; and a polyamide-imide insulation coating formed around the conductor wire, the polyamide-imide insulation coating being made from a polyamide-imide resin based insulating varnish, the varnish being synthesized by reaction of an isocyanate constituent and an acid constituent in a solvent, the isocyanate constituent including 5 to 50 mol % of 2,4?-diphenylmethane-diisocyanate having a flexible molecular structure.

Abstract: In heteroepitaxially growing a group-III nitride semiconductor on a Si single crystal substrate, the occurrence of cracks initiating in the wafer edge portion can be suppressed. Region A is an outermost peripheral portion outside the principal surface, being a bevel portion tapered. Regions B and C are on the same plane (the principal surface), region B (mirror-surface portion) being the center portion of the principal surface, and region C a region in the principal surface edge portion surrounding region B. The principal surface has a plane orientation, and in region B, is mirror-surface-finished. Region B occupies most of the principal surface of this Si single crystal substrate, and a semiconductor device is manufactured therein. Region C (surface-roughened portion) has a plane orientation as with region B, however, region B is mirror-surface-finished, whereas region C is surface-roughened.

Abstract: An epitaxial substrate for electronic devices, in which current flows in a lateral direction and of which warpage configuration is properly controlled, and a method of producing the same. The epitaxial substrate for electronic devices is produced by forming a bonded substrate by bonding a low-resistance Si single crystal substrate and a high-resistance Si single crystal substrate together; forming a buffer as an insulating layer on a surface of the bonded substrate on the high-resistance Si single crystal substrate side; and producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate. The resistivity of the low-resistance Si single crystal substrate is 100 ?·cm or less, and the resistivity of the high-resistance Si single crystal substrate is 1000 ?·cm or more.

Abstract: An electrical insulating property tester includes a guaranteed voltage applying unit for applying a guaranteed voltage to a running line provided with an electrical insulating layer around an electrical conducting wire, a grounding unit arranged downstream of the guaranteed voltage applying unit, for grounding the running line to thereby remove electric charge electrostatically induced on the running line, and a test voltage applying unit arranged downstream of the grounding unit, for applying a test voltage lower than the guaranteed voltage to the running line, to thereby detect a leakage current value.

Abstract: There is provided an insulated wire including a wire conductor and an insulation coating formed on the wire conductor by extrusion coating a resin composition. The resin composition is a mixture of a polyphenylene sulfide-based resin (A) and a polyamide-based resin (B), in which a ratio of parts by mass of the resin (B) to that of the resin (A), i.e. (B)/(A), is not less than 5/95 and not more than 30/70.

Abstract: An insulated wire includes a conductor, and an insulating covering layer formed on a periphery of the conductor and including two or more insulating coatings. The insulating coatings include a polyamide-imide resin insulating material represented by chemical formula 1: where R indicates a divalent aromatic diamine including three or more aromatic rings. The insulating coatings are formed by applying and baking the polyamide-imide resin insulating material, and the polyamide-imide resin insulating material is obtained by reacting an imide group containing dicarboxylic acid with a diisocyanate, the imide group containing dicarboxylic acid being obtained by dehydration reaction of a diamine comprising a divalent aromatic diamine including three or more aromatic rings with an acid using an azeotropic solvent.

Abstract: To provide an epitaxial substrate for electronic devices, in which current flows in a lateral direction, which enables accurate measurement of the sheet resistance of HEMTs without contact, and to provide a method of efficiently producing the epitaxial substrate for electronic devices, the method characteristically includes the steps of forming a barrier layer against impurity diffusion on one surface of a high-resistance Si-single crystal substrate, forming a buffer as an insulating layer on the other surface of the high-resistance Si-single crystal substrate, producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate, and measuring resistance of the main laminate of the epitaxial substrate without contact.

Abstract: There is provided an insulated wire equipped with an insulation film made of polymer alloy, the polymer alloy comprising an amorphous thermosetting resin and an amorphous thermoplastic resin, in which: the insulation film has a sea-island structure; the amorphous thermosetting resin is a sea component of the sea-island structure; and the amorphous thermoplastic resin is an island component of the sea-island structure.

Abstract: There is provided an insulated wire having an insulation film composed of a plurality of layers provided on a conductor, in which: the insulation film includes a first film layer and a second film layer; the first film layer is made of a first resin composition formed by graft-polymerizing a graft compound with an ethylene-tetrafluoroethylene copolymer and is provided on a circumference of the conductor; and the second film layer is made of a second resin composition being a polymer alloy made of a polyphenylene sulfide resin and a polyamide resin, or being a polymer alloy made of a polyether ether ketone resin and a polyamide resin and is provided on a circumference of the first film layer.

Abstract: In heteroepitaxially growing a group-III nitride semiconductor on a Si single crystal substrate, the occurrence of cracks initiating in the wafer edge portion can be suppressed. Region A is an outermost peripheral portion outside the principal surface, being a bevel portion tapered. Regions B and C are on the same plane (the principal surface), region B (mirror-surface portion) being the center portion of the principal surface, and region C a region in the principal surface edge portion surrounding region B. The principal surface has a plane orientation, and in region B, is mirror-surface-finished. Region B occupies most of the principal surface of this Si single crystal substrate, and a semiconductor device is manufactured therein. Region C (surface-roughened portion) has a plane orientation as with region B, however, region B is mirror-surface-finished, whereas region C is surface-roughened.

Abstract: To provide an epitaxial substrate for electronic devices, in which current flows in a lateral direction, which enables accurate measurement of the sheet resistance of HEMTs without contact, and to provide a method of efficiently producing the epitaxial substrate for electronic devices, the method characteristically includes the steps of forming a barrier layer against impurity diffusion on one surface of a high-resistance Si-single crystal substrate, forming a buffer as an insulating layer on the other surface of the high-resistance Si-single crystal substrate, producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate, and measuring resistance of the main laminate of the epitaxial substrate without contact.

Abstract: An epitaxial substrate for electronic devices, in which current flows in a lateral direction and of which warpage configuration is properly controlled, and a method of producing the same. The epitaxial substrate for electronic devices is produced by forming a bonded substrate by bonding a low-resistance Si single crystal substrate and a high-resistance Si single crystal substrate together; forming a buffer as an insulating layer on a surface of the bonded substrate on the high-resistance Si single crystal substrate side; and producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate. The resistivity of the low-resistance Si single crystal substrate is 100 ?·cm or less, and the resistivity of the high-resistance Si single crystal substrate is 1000 ?·cm or more.

Abstract: There is provided an insulated wire including a wire conductor and an insulation coating formed on the wire conductor by extrusion coating a resin composition. The resin composition is a mixture of a polyphenylene sulfide-based resin (A) and a polyamide-based resin (B), in which a ratio of parts by mass of the resin (B) to that of the resin (A), i.e. (B)/(A), is not less than 5/95 and not more than 30/70.

Abstract: There is provided an insulated wire having an insulation film composed of a plurality of layers provided on a conductor, in which: the insulation film includes a first film layer and a second film layer; the first film layer is made of a first resin composition formed by graft-polymerizing a graft compound with an ethylene-tetrafluoroethylene copolymer and is provided on a circumference of the conductor; and the second film layer is made of a second resin composition being a polymer alloy made of a polyphenylene sulfide resin and a polyamide resin, or being a polymer alloy made of a polyether ether ketone resin and a polyamide resin and is provided on a circumference of the first film layer.

Abstract: An insulated wire includes a conductor, and an insulating covering layer formed on a periphery of the conductor and including two or more insulating coatings. The insulating coatings include a polyamide-imide resin insulating material represented by chemical formula 1: where R indicates a divalent aromatic diamine including three or more aromatic rings. The insulating coatings are formed by applying and baking the polyamide-imide resin insulating material, and the polyamide-imide resin insulating material is obtained by reacting an imide group containing dicarboxylic acid with a diisocyanate, the imide group containing dicarboxylic acid being obtained by dehydration reaction of a diamine comprising a divalent aromatic diamine including three or more aromatic rings with an acid using an azeotropic solvent.

Abstract: There is provided an insulated wire including: a conductor wire; and a polyamide-imide insulation coating formed around the conductor wire, the polyamide-imide insulation coating being made from a polyamide-imide resin based insulating varnish, the varnish being synthesized by reaction of an isocyanate constituent and an acid constituent in a solvent, the isocyanate constituent including 5 to 50 mol % of 2,4?-diphenylmethane-diisocyanate having a flexible molecular structure.

Abstract: There is provided an insulated wire equipped with an insulation film made of polymer alloy, the polymer alloy comprising an amorphous thermosetting resin and an amorphous thermoplastic resin, in which: the insulation film has a sea-island structure; the amorphous thermosetting resin is a sea component of the sea-island structure; and the amorphous thermoplastic resin is an island component of the sea-island structure.

Abstract: A simple and easy-to-use method for producing a 2-hydroxyester compound using a cyanohydrin compound, as a raw material, is provided.

Abstract: A simple and easy-to-use method for producing a 2-hydroxyester compound using a cyanohydrin compound, as a raw material, is provided.