Abstract: A semiconductor device includes a first semiconductor layer of a first conductivity type having a first impurity concentration C11, an epitaxial semiconductor layer disposed on the first semiconductor layer, a first device region formed in a first region of the epitaxial semiconductor layer in a plan view, a second device region formed in a second region of the epitaxial semiconductor layer in a plan view, and to which a higher voltage is applied than a voltage applied to the first device region, and a second semiconductor layer of the first conductivity type having a second impurity concentration C12. The second semiconductor layer is formed on the first semiconductor layer within the first region but is not formed on the first semiconductor layer within the second region. The following relationship is satisfied: C11<C12, and 2×1014 cm?3?C12?1×1016 cm?3.

Abstract: A touch panel includes a first resistive film having a first electrode and a second electrode provided at both ends in a first direction, and a second resistive film having a third electrode and a fourth electrode provided at both ends in a second direction perpendicular to the first direction, wherein the touch panel detects contact between the first resistive film and the second resistive film caused by pressing the first resistive film, and outputs a pressed position. The touch panel further includes a first detector that detects a contact area between the first resistive film and the second resistive film in pressing the first resistive film, a second detector that detects a distance between two points when the two points are pressed on the first resistive film, and a corrector that corrects a detected distance between the two points in accordance with a detected contact area.

Abstract: A bedtime setting unit 13 setting a target bedtime, on the basis of a sleep efficiency of a user, and a compliance status index value calculation unit 14 calculating a compliance status index value representing a compliance status with the set target bedtime are provided, and in a case where the sleep efficiency is less than a first predetermined value and the compliance status index value is a threshold value or more, a time later than the previous set bedtime is set as the next bedtime, in a case where the sleep efficiency is less than the first predetermined value and the compliance status index value is less than the threshold value, a time identical to the previous set bedtime is set as the next bedtime such that even in a state where it is necessary to set the bedtime to be later than the previous set bedtime since the sleep efficiency is less than the first predetermined value, a time identical to the previous set bedtime is set as the next bedtime in a case where the compliance status index value is l

Abstract: A bedtime setting unit 13 setting a target bedtime, on the basis of a sleep efficiency of a user, and a compliance status index value calculation unit 14 calculating a compliance status index value representing a compliance status with the set target bedtime are provided, and in a case where the sleep efficiency is less than a first predetermined value and the compliance status index value is a threshold value or more, a time later than the previous set bedtime is set as the next bedtime, in a case where the sleep efficiency is less than the first predetermined value and the compliance status index value is less than the threshold value, a time identical to the previous set bedtime is set as the next bedtime such that even in a state where it is necessary to set the bedtime to be later than the previous set bedtime since the sleep efficiency is less than the first predetermined value, a time identical to the previous set bedtime is set as the next bedtime in a case where the compliance status index value is l

Abstract: A semiconductor device includes a chip that has a first main surface on one side and a second main surface on another side, a pn-junction portion that is formed in an interior of the chip such as to extend along the first main surface, a device region that is provided in the first main surface, a first trench structure that is formed in the first main surface such as to penetrate through the pn-junction portion and demarcates the device region in the first main surface, and a second trench structure that is formed in the first main surface such as to penetrate through the pn-junction portion and demarcates the device region in a region further to the device region side than the first trench structure.

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type formed on the semiconductor substrate and having a first conductivity type impurity concentration higher than that of the semiconductor substrate, a second semiconductor layer of a second conductivity type formed above the first semiconductor layer, a first device region formed in the second semiconductor layer and configured to operate based on a first reference voltage, a second device region formed in the second semiconductor layer and configured to operate based on a second reference voltage, the second device region being spaced apart from the first device region, and a region isolation structure interposed between the first and second device regions and formed in a region extending from a front surface of the second semiconductor layer to the first semiconductor layer so as to electrically isolate the first and second device regions from each other.

Abstract: A gas sensor (1) including a first gas detection element (2) and a second gas detection element (3), a first storage portion (4) having a first internal space (4A), and a first opening (4B) establishing communication between the first internal space (4A) and the outside space thereof exposed to a detection subject atmosphere, a second storage portion (5) having a second internal space (5A) and a second opening (5B) establishing communication between the second internal space (5A) and the outside space, a first membrane (4C) allowing permeation of water vapor and substantially not allowing permeation of a detection target gas, and covering the first opening (4B), and a calculation unit (12) for calculating the concentration of a detection target gas contained in the detection subject atmosphere, based on outputs from the first and second gas detection elements (2, 3), respectively.

Abstract: Disclosed is a gas sensor for detecting a measurement target gas in a measurement gas atmosphere, including first and second sensor elements respectively installed in first and second inner spaces of first and second installation parts. The first and second sensor elements have respective heating resistors connected in series and each has a resistance value that varies with change in temperature thereof so that the concentration of the measurement target gas can be calculated according to a potential between the heating resistors of the first and second sensor elements with the application of a constant voltage. The first and second installation parts are located at such positions that allow a maximum temperature difference of 0.4° C. or less between the first and second inner spaces during change in atmosphere temperature from 0° C. to 80° C.

Abstract: Disclosed is a gas sensor for detecting a measurement target gas in a measurement gas atmosphere, including: a first sensor element; a first installation part defining a first inner space in which the first sensor element is installed; and a casing accommodating therein the first installation part. The casing has an opening formed to introduce the measurement target gas into an inside of the casing. The first installation part has: a first gas introduction hole formed to provide communication between the first inner space and the inside of the casing; and a membrane member arranged to cover the first gas introduction hole and having permeability to water vapor and substantially no permeability to the measurement target gas. At least a portion of the first installation part in contact with the membrane member is made of insulating ceramic material or resin material.

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type formed on the semiconductor substrate and having a first conductivity type impurity concentration higher than that of the semiconductor substrate, a second semiconductor layer of a second conductivity type formed above the first semiconductor layer, a first device region formed in the second semiconductor layer and configured to operate based on a first reference voltage, a second device region formed in the second semiconductor layer and configured to operate based on a second reference voltage, the second device region being spaced apart from the first device region, and a region isolation structure interposed between the first and second device regions and formed in a region extending from a front surface of the second semiconductor layer to the first semiconductor layer so as to electrically isolate the first and second device regions from each other.

Abstract: Disclosed is a gas sensor for detecting hydrogen gas in a measurement gas atmosphere, including: a first installation part defining a first inner space in communication with the measurement gas atmosphere through a solid electrolyte membrane member; a second installation part defining a second inner space in direct communication with the measurement gas atmosphere; first and second sensor elements respectively installed in the first and second inner spaces; and a calculation unit configured to calculate the concentration of the hydrogen gas according to a potential between the first and second sensor elements. The gas sensor further includes a current detecting portion that detects a current flowing through the first and second sensor elements. The calculation unit is configured to, when the current detected by the current detecting portion is larger than or equal to a threshold value, judge that the hydrogen gas is present at high concentration.

Abstract: A gas sensor (1) including a first gas detection element (2) and a second gas detection element (3), a first storage portion (4) having a first internal space (4A), and a first opening (4B) establishing communication between the first internal space (4A) and the outside space thereof exposed to a detection subject atmosphere, a second storage portion (5) having a second internal space (5A) and a second opening (5B) establishing communication between the second internal space (5A) and the outside space, a first membrane (4C) allowing permeation of water vapor and substantially not allowing permeation of a detection target gas, and covering the first opening (4B), and a calculation unit (12) for calculating the concentration of a detection target gas contained in the detection subject atmosphere, based on outputs from the first and second gas detection elements (2, 3), respectively.

Abstract: A monitoring terminal device (2) is a device for monitoring users entering and exiting an area. A controller (14) specifies each user entering the area as a first monitoring target or a first non-monitoring target in a first entry image and a first exit image. The first entry image and the first exit image exhibit the same first monitoring target. The first entry image includes an image of at least one user entering the area (22). The first exit image includes an image of at least one user exiting the area. The controller (14) creates a second entry image by performing a first marking process on the first entry image. The controller (14) creates a second exit image by performing a second marking process on the first exit image. An image display section (18) displays at least one of the second entry image and the second exit image.

Abstract: Each of a plurality of node devices 200 connected by a distributed network includes a program storage unit 201 that stores a processing program for generating case report data by processing clinical trial data, a program execution unit 22 that generates case report data from clinical trial data, and a storage controller 24 that performs a consensus building process for sharing case report data among all the plurality of node devices 200 and causes a data storage unit 202 to store the case report data only when consensus is made. By preparing the case report data by execution of the processing program, falsification can be prevented in a process of preparing a case report even when a check, etc. by a third party is not included. Further, by distributing and storing the case report data in the respective node devices 200 only when validity is proved by the consensus building process, it is possible to prevent the case report from being falsified.

Abstract: The present invention provides a method of producing an ethanolamine, with a low production ratio of a dialkanolamine (for example, less than 30% by weight). A process for producing an alkanolamine of the present invention includes reacting an alkylene oxide with ammonia to obtain a reaction product containing a monoalkanolamine, a dialkanolamine, and a trialkanolamine; separating the dialkanolamine from the reaction product; and recycling at least a portion of the dialkanolamine for the reaction of an alkylene oxide with ammonia, wherein in the recycling step, the dialkanolamine is supplied in a molar ratio of the alkylene oxide (moles) to a total amount (moles) of ammonia and the dialkanolamine of 0.08 or more and less than 0.26.

Abstract: A semiconductor device includes: a semiconductor substrate with a first conductivity type; a semiconductor layer with a second conductivity type formed on the semiconductor substrate; a drain region with the second conductivity type and a source region with the second conductivity type formed to be spaced apart from each other in a surface region of the semiconductor layer; a drain buffer region with the second conductivity type formed in the semiconductor substrate directly under the drain region and in the semiconductor layer; a conductivity type well region with the second conductivity type formed on the semiconductor layer between the drain region and the drain buffer region; and a drain metal formed on the drain region to be electrically connected to the drain region and to overlap the well region in a plan view.

Abstract: A monitoring terminal device (2) is a device for monitoring users entering and exiting an area. A controller (14) specifies each user entering the area as a first monitoring target or a first non-monitoring target in a first entry image and a first exit image. The first entry image and the first exit image exhibit the same first monitoring target. The first entry image includes an image of at least one user entering the area (22). The first exit image includes an image of at least one user exiting the area. The controller (14) creates a second entry image by performing a first marking process on the first entry image. The controller (14) creates a second exit image by performing a second marking process on the first exit image. An image display section (18) displays at least one of the second entry image and the second exit image.

Abstract: Disclosed is a gas sensor for detecting hydrogen gas in a measurement gas atmosphere, including: a first installation part defining a first inner space in communication with the measurement gas atmosphere through a solid electrolyte membrane member; a second installation part defining a second inner space in direct communication with the measurement gas atmosphere; first and second sensor elements respectively installed in the first and second inner spaces; and a calculation unit configured to calculate the concentration of the hydrogen gas according to a potential between the first and second sensor elements. The gas sensor further includes a current detecting portion that detects a current flowing through the first and second sensor elements. The calculation unit is configured to, when the current detected by the current detecting portion is larger than or equal to a threshold value, judge that the hydrogen gas is present at high concentration.

Abstract: Disclosed is a gas sensor for detecting a measurement target gas in a measurement gas atmosphere, including first and second sensor elements respectively installed in first and second inner spaces of first and second installation parts. The first and second sensor elements have respective heating resistors connected in series and each has a resistance value that varies with change in temperature thereof so that the concentration of the measurement target gas can be calculated according to a potential between the heating resistors of the first and second sensor elements with the application of a constant voltage. The first and second installation parts are located at such positions that allow a maximum temperature difference of 0.4° C. or less between the first and second inner spaces during change in atmosphere temperature from 0° C. to 80° C.

Abstract: Disclosed is a gas sensor for detecting a measurement target gas in a measurement gas atmosphere, including: a first sensor element; a first installation part defining a first inner space in which the first sensor element is installed; and a casing accommodating therein the first installation part. The casing has an opening formed to introduce the measurement target gas into an inside of the casing. The first installation part has: a first gas introduction hole formed to provide communication between the first inner space and the inside of the casing; and a membrane member arranged to cover the first gas introduction hole and having permeability to water vapor and substantially no permeability to the measurement target gas. At least a portion of the first installation part in contact with the membrane member is made of insulating ceramic material or resin material.