Abstract: A cosmetic is characterized by containing a polymer which is produced by polymerizing a fluorine atom-containing monomer represented by formula (I) (wherein R1 represents a hydrogen atom or a methyl group; R2 represents a hydrogen atom or a fluorine atom; m is an integer of 0 or 1 to 4; and n is an integer of 1 to 12), (B) a betaine monomer represented by formula (II) (wherein R3 represents a hydrogen atom or a methyl group; R4 and R5 independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; p represents an integer of 1 to 4: and q represents an integer of 1 to 4) and (C) a monomer component containing an alkyl (meth)acrylate represented by formula (III) (wherein R6 represents a hydrogen atom or a methyl group and R7 represents an alkyl group having 8 to 22 carbon atoms) with one another.

Abstract: There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.

Abstract: There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.

Abstract: A cosmetic is characterized by containing a polymer which is produced by polymerizing a fluorine atom-containing monomer represented by formula (I) (wherein R1 represents a hydrogen atom or a methyl group; R2 represents a hydrogen atom or a fluorine atom; m is an integer of 0 or 1 to 4; and n is an integer of 1 to 12), (B) a betaine monomer represented by formula (II) (wherein R3 represents a hydrogen atom or a methyl group; R4 and R5 independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; p represents an integer of 1 to 4: and q represents an integer of 1 to 4) and (C) a monomer component containing an alkyl (meth)acrylate represented by formula (III) (wherein R6 represents a hydrogen atom or a methyl group and R7 represents an alkyl group having 8 to 22 carbon atoms) with one another.

Abstract: A thin film piezoelectric element of the present invention includes a substrate and a piezoelectric thin film stack formed on the substrate. The piezoelectric thin film stack includes a top electrode layer, a bottom electrode layer and a piezoelectric layer sandwiched between the top electrode layer and the bottom electrode layer, wherein the piezoelectric layer includes a first piezoelectric layer and a second piezoelectric layer whose compositions have different phase structures. The present invention can obtain high piezoelectric constants, enhanced coercive field strength and good thermal stability, thereby enabling larger applied field strength without depolarization and achieving a large stroke for its applied device.

Abstract: A thin-film piezoelectric material element includes a lower electrode film, a piezoelectric material film, and an upper electrode film, the lower electrode film, the piezoelectric material film and the upper electrode film are laminated sequentially. An upper surface of the piezoelectric material film is a concavity and convexity surface having a convex part and a concave part, the convex part is a curved surface convexly projected, and the concave part is a curved surface concavely hollowed, the upper electrode film is formed on the concavity and convexity surface. The thin-film piezoelectric material element has a stress balancing film formed with a material having an internal stress capable of cancelling an element stress, the stress balancing film is formed on the upper electrode film.

Abstract: A thin-film piezoelectric material element includes a lower electrode film, a piezoelectric material film, and an upper electrode film, the lower electrode film, the piezoelectric material film and the upper electrode film are laminated sequentially. An upper surface of the piezoelectric material film is a concavity and convexity surface having a convex part and a concave part, the convex part is a curved surface convexly projected, and the concave part is a curved surface concavely hollowed, the upper electrode film is formed on the concavity and convexity surface. The thin-film piezoelectric material element has a stress balancing film formed with a material having an internal stress capable of cancelling an element stress, the stress balancing film is formed on the upper electrode film.

Abstract: There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.

Abstract: A thin film piezoelectric element of the present invention includes a substrate and a piezoelectric thin film stack formed on the substrate. The piezoelectric thin film stack includes a top electrode layer, a bottom electrode layer and a piezoelectric layer sandwiched between the top electrode layer and the bottom electrode layer, wherein the piezoelectric layer includes a first piezoelectric layer and a second piezoelectric layer whose compositions have different phase structures. The present invention can obtain high piezoelectric constants, enhanced coercive field strength, thereby enabling larger applied field strength without depolarization and achieving a large stroke for its applied device.

Abstract: A thin film piezoelectric element of the present invention includes a substrate and a piezoelectric thin film stack formed on the substrate. The piezoelectric thin film stack includes a top electrode layer, a bottom electrode layer and a piezoelectric layer sandwiched between the top electrode layer and the bottom electrode layer, wherein the piezoelectric layer includes a first piezoelectric layer and a second piezoelectric layer whose compositions have different phase structures. The present invention can obtain high piezoelectric constants, enhanced coercive field strength and good thermal stability, thereby enabling larger applied field strength without depolarization and achieving a large stroke for its applied device.

Abstract: Provided are a thin film coil formed at high densities, a method of forming a thin film coil, a thin film magnetic head which includes the thin film coil and thus enables ensuring stable recording characteristics while coping with a higher recording density, and a method of manufacturing a thin film magnetic head. The thin film coil includes a first coil having a top surface having the maximum width, an insulating wall formed by selectively etching an insulating layer filling a region between windings by using the first coil as a mask, and a second coil isolated from the first coil by the insulating wall. This easily enables forming the thin film coil in a narrower space, while ensuring electrical insulation between the windings of the first and second coils.

Abstract: Provided are a thin film coil formed at high densities, a method of forming a thin film coil, a thin film magnetic head which includes the thin film coil and thus enables ensuring stable recording characteristics while coping with a higher recording density, and a method of manufacturing a thin film magnetic head. The thin film coil includes a first coil having a top surface having the maximum width, an insulating wall formed by selectively etching an insulating layer filling a region between windings by using the first coil as a mask, and a second coil isolated from the first coil by the insulating wall. This easily enables forming the thin film coil in a narrower space, while ensuring electrical insulation between the windings of the first and second coils.

Abstract: An inverse type compound thin film magnetic with good dispersion of the heat generated in the magnetoresistance (MR) element, ensuring thermal reliability. In one embodiment, an electromagnetic induction type thin film magnetic head, a magnetoresistance effect type thin film magnetic head, a first protective film, a heat dispersion layer with thermal conductivity higher than the first protective film, and a second protective film are formed in succession on a substrate.

Abstract: An apparatus and method for formation of the upper magnetic pole layer of a thin film magnetic head. The presently described method for formation of the upper magnetic pole layer of a thin film magnetic head enables the formation with submicron precision of a resist layer for use in forming the upper magnetic pole layer, which must necessarily be formed on a surface having a step, which can contribute to further improvement of areal recording densities. A frame for use in forming the upper magnetic pole layer is formed from multiple resist layers, and the relatively thick lower resist layer is formed by a vacuum thin film formation method.

Abstract: A composite type thin-film magnetic head. In one embodiment, a projection is formed on a second magnetic film layer of a composite type thin-film magnetic head. The position where this projection is formed is the area where a second magnetic film layer and third magnetic film layer face each other across a gap film layer. A width b of the projection is smaller than a width a of the third magnetic layer film.

Abstract: A method of manufacturing a thin film magnetic head. In one embodiment, a lower magnetic pole and a magnetic film are formed on a substrate that is covered by an insulating film. A mask is then formed on the lower magnetic pole. The mask and the lower magnetic pole are then ion milled to the same width. A protective film is then formed to sufficiently cover then lower magnetic pole and the mask. The protective film is then polished to expose the mask. An exposed surface of the mask and the protective film are then planarized and the remaining make is then removed by wet etching. A concavity is formed at a position in the lower magnetic pole in the protective film. An upper magnetic pole is then formed by electroplating on the concavity. The mask is formed by electroplating Cu or permalloy, or by patterning photoresist.