Abstract: A driving assistance control section of a vehicle control apparatus has an operation state of a driver's vehicle transition from a stop state to a start-stand-by state keeping a second assistance state, if an accelerating operation larger than a predetermined first threshold acceleration is performed and there is an ahead-located vehicle, and has the driving assistance state transition from the second assistance state to a first assistance state and has the operation state transition from the stop state to the start-stand-by state if an accelerating operation larger than a predetermined second threshold acceleration is performed over a longer time than a predetermined threshold duration and there is an ahead-located vehicle, if follow-up running control is being performed in the second assistance state in which it is not necessary for a driver to hold a steering wheel to continue to have a driving assistance function performed.

Abstract: A tape autoloading device includes a tape leading-end processing device, which forms the leading end of a carrier tape into a predetermined shape, and a transfer device, which carries the carrier tape in a first direction different from the tape longitudinal direction and transfers the carrier tape to the next step. Tape leading-end processing device includes a feeding device for conveying the carrier tape along a conveyance path formed in a groove in a guide member, a pressing device for pressing the upper surface of the carrier tape, and a cutting device for cutting the leading-end of the carrier tape. The transfer device includes a guide device for guiding the carrier tape having a leading end formed into a predetermined shape, a gripping device for gripping the leading end of the carrier tape, and a moving device for moving the carrier tape in the first direction.

Abstract: This provides a semiconductor laser device of a high light output efficiency, which is high in current confinement effect, small in leak current, and favorable in temperature property, and indicates a low threshold current, and can effectively confine laser light to a stripe region, and is favorable in beam profile. This semiconductor laser device includes the laminated structure of an n-AlInP clad layer, a superlattice active layer section, a p-AlInP first clad layer, a GaInP etching stop layer are formed, and on top of that, there are a p-AlInP second clad layer, a GaInP protective layer and a p-GaAs contact layer, which are processed into a stripe-shaped ridge. A p-side electrode is directly coated and formed on the etching stop layer of ridge top surface.

Abstract: An apparatus holds a plurality of hollow cylindrical members and pushes off the hollow cylindrical members. The apparatus includes a holder shaft for holding the hollow cylindrical members in tandem thereon, a gripper member projecting outwardly from a side wall surface of the holder shaft and engaging an inner wall surface of a foremost one of the hollow cylindrical members, a cam disposed in the holder shaft for displacing the gripper member, a pusher cylinder for pressing an end face of a rearmost one of the hollow cylindrical members and moving all the hollow cylindrical members forward, to release the foremost one of the hollow cylindrical members from the holder shaft and position a next one of the hollow cylindrical members as a new foremost one of the hollow cylindrical members, and a turning cylinder for turning the holder shaft.

Abstract: A semiconductor laser element is provided which includes a first semiconductor layer, an active layer having a current injection region, a second semiconductor layer, a third semiconductor layer, and an electrode for injecting a current into the active layer. In the semiconductor laser element, the first semiconductor layer, the active layer, the second semiconductor layer, and the third semiconductor layer are laminated in that order on a substrate, the first semiconductor layer has a current constriction layer which constricts the current injection region of the active layer, the third semiconductor layer is formed on an upper surface of the second semiconductor layer in a region corresponding to the current injection region of the active layer, and the electrode is formed on the upper surface of the second semiconductor layer in a region other than that of the third semiconductor layer.

Abstract: A casting apparatus has a long cooling jig inclined with respect to a vertical direction. A melt is supplied to and flowed on a bottom surface of the cooling jig, whereby a solid phase is generated in the melt to obtain a semi-solid slurry, and the semi-solid slurry is transferred into and solidified in a cavity of a mold to obtain a casting. The casting apparatus further has a release agent application unit, and a release agent is applied by the application unit to the bottom surface of the cooling jig in a direction toward a supply of the melt at an angle of less than 90° to the bottom surface before supplying the melt to the cooling jig.

Abstract: A semiconductor laser apparatus includes a heat dissipating member including a main body having a front end portion that extends in a left-right direction and a pair of protruding portions that protrude forward from both sides of the front end portion; a semiconductor laser device bonded along the front end portion of the main body; and a stiffener configured to bridge the pair of protruding portions.

Abstract: A semiconductor laser element is provided which includes a first semiconductor layer, an active layer having a current injection region, a second semiconductor layer, a third semiconductor layer, and an electrode for injecting a current into the active layer. In the semiconductor laser element, the first semiconductor layer, the active layer, the second semiconductor layer, and the third semiconductor layer are laminated in that order on a substrate, the first semiconductor layer has a current constriction layer which constricts the current injection region of the active layer, the third semiconductor layer is formed on an upper surface of the second semiconductor layer in a region corresponding to the current injection region of the active layer, and the electrode is formed on the upper surface of the second semiconductor layer in a region other than that of the third semiconductor layer.

Abstract: A laser diode capable of operating at high temperature by preventing carrier overflow is provided. A laser diode includes an AlGaInP-based laminate configuration including at least a lower cladding layer, an active layer and an upper cladding layer in this order, wherein the AlGaInP-based laminate configuration receives a larger compressive stress than 2200 ppm from a stress source.

Abstract: An apparatus holds a plurality of hollow cylindrical members and pushes off the hollow cylindrical members. The apparatus includes a holder shaft for holding the hollow cylindrical members in tandem thereon, a gripper member projecting outwardly from a side wall surface of the holder shaft and engaging an inner wall surface of a foremost one of the hollow cylindrical members, a cam disposed in the holder shaft for displacing the gripper member, a pusher cylinder for pressing an end face of a rearmost one of the hollow cylindrical members and moving all the hollow cylindrical members forward, to release the foremost one of the hollow cylindrical members from the holder shaft and position a next one of the hollow cylindrical members as a new foremost one of the hollow cylindrical members, and a turning cylinder for turning the holder shaft.

Abstract: This provides a semiconductor laser device of a high light output efficiency, which is high in current confinement effect, small in leak current, and favorable in temperature property, and indicates a low threshold current, and can effectively confine laser light to a stripe region, and is favorable in beam profile. This semiconductor laser device (100) includes the laminated structure of an n-AlInP clad layer (103), a superlattice active layer section (104), a p-AlInP first clad layer (105), a GaInP etching stop layer (106) are formed, and on top of that, there are a p-AlInP second clad layer (107), a GaInP protective layer (108) and a p-GaAs contact layer (109), which are processed into a stripe-shaped ridge.

Abstract: A laser diode capable of operating at high temperature by preventing carrier overflow is provided. A laser diode includes an AlGaInP-based laminate configuration including at least a lower cladding layer, an active layer and an upper cladding layer in this order, wherein the AlGaInP-based laminate configuration receives a larger compressive stress than 2200 ppm from a stress source.

Abstract: A laser diode capable of inhibiting overflow of electrons in a p-type cladding layer and improving temperature characteristics and light emitting efficiency is provided. A laser diode at least comprises: an n-type cladding layer; an active layer; and a p-type cladding layer, which are made of an AlGaInP compound semiconductor material and formed in this order on a substrate. A thickness of the p-type cladding layer is 0.7 ?m or less.

Abstract: This provides a semiconductor laser device of a high light output efficiency, which is high in current confinement effect, small in leak current, and favorable in temperature property, and indicates a low threshold current, and can effectively confine laser light to a stripe region, and is favorable in beam profile. This semiconductor laser device (100) includes the laminated structure of an n-AlInP clad layer (103) a superlattice active layer section (104), a p-AlInP first clad layer (105), a GaInP etching stop layer (106) are formed, and on top of that, there are a p-AlInP second clad layer (107), a GaInP protective layer (108) and a p-GaAs contact layer (109), which are processed into a stripe-shaped ridge.

Abstract: A method for growth of II-VI compound semiconductors grows a p-type II-VI compound semiconductor such as a p-type ZnSe by vapor deposition such as metallorganic chemical vapor deposition and molecular beam epitaxy using gaseous materials. The method uses as a p-type dopant an organic compound including at least one nitrogen atom and at least two groups of atoms each having a molecular weight larger than 12 and both combined with the nitrogen atom. One of such organic compounds is di-isopropylamine.

Abstract: An SDH semiconductor laser has a semiconductor substrate which is (100) oriented and has a stripe ridge thereon, first and second cladding layers disposed on stripe ridge, an active layer sandwiched between the first and second cladding layers, and an electrode held in electric contact with the first and second cladding layers and the active layer. The stripe ridge extends in a <01-1> axis direction, and the first and second cladding layers and the active layer jointly provide a semiconductor stripe region of triangular cross section sandwiched between (111) A faces. A method of manufacturing the SDH semiconductor laser is also disclosed.