Abstract: A crucible for growing a single-crystal in which a raw material melt for growing the single-crystal is solidified while being accommodated includes a side wall part configured to surround the raw material melt and a bottom part configured to support the raw material melt while being continuous with the side wall part, in which the side wall part has circumferential length redundancy inside the side wall part in a cross-sectional view. The side wall part has a portion where the circumference length is redundant inside any portion in the cross-sectional view, and when the crucible for growing a single-crystal is cooled in a cooling process after the single-crystal growth, the portion where the circumference length is redundant inside in the cross-sectional view is expanded to an outside of the crucible for growing a single-crystal.

Abstract: An object of the present invention is to provide a Schottky barrier diode which is less likely to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 formed at a position surrounding the anode electrode 40 in a plan view. An electric field is dispersed by the presence of the outer peripheral trench 10 formed in the drift layer 30. This alleviates concentration of the electric field on the corner of the anode electrode 40, making it unlikely to cause dielectric breakdown.

Abstract: The present invention further improves the measurement accuracy of the viscosity of an ink composition. An ink composition for forming a functional layer of an organic photoelectric conversion element, wherein an electron spin concentration per 1 L of volume of the ink composition is 250×1016 or less. The ink composition may be an ink composition containing a solvent and a p-type semiconductor material. The ink composition may be an ink composition in which the p-type semiconductor material contains a polymer compound having an electron spin concentration per 1 g of weight of 70×1016 or less. The ink composition may be an ink composition in which the solvent contains one or more types of organic solvents and the p-type semiconductor material contains a ?-conjugated polymer compound containing a donor constitutional unit and an acceptor constitutional unit.

Abstract: A die for EFG-based single crystal growth includes a lower surface to be immersed into a raw material melt with an impurity added, a rectangular upper surface facing a seed crystal and having a long side and a short side, and a plurality of slit sections extending from the lower surface to the upper surface and causing the raw material melt to ascend from the lower surface to the upper surface. Respective longitudinal directions of openings of the plurality of slit sections on the upper surface are parallel to one another and non-parallel to the long side of the upper surface.

Abstract: Provided is a method for producing a ?-conjugated polymer capable of suppressing an increase in dark current of an organic photoelectric conversion element even if the method includes a purification step including heating. A method for producing a ?-conjugated polymer includes: step (I) of heating and dissolving a crude ?-conjugated polymer in a solvent to obtain a polymer solution; and step (II) of precipitating a ?-conjugated polymer from the polymer solution. In step (I), the content of peroxide in the solvent is 0.1% or less in terms of a relative area ratio measured by high-performance liquid chromatography, and the electron spin concentration of the ?-conjugated polymer is 30×1016 Spin/g or less and/or 2.5 times or less the electron spin concentration of the crude ?-conjugated polymer.

Abstract: A crucible for growing a single-crystal in which a raw material melt for growing the single-crystal is solidified while being accommodated includes a side wall part configured to surround the raw material melt and a bottom part configured to support the raw material melt while being continuous with the side wall part, in which the side wall part has circumferential length redundancy inside the side wall part in a cross-sectional view. The side wall part has a portion where the circumference length is redundant inside any portion in the cross-sectional view, and when the crucible for growing a single-crystal is cooled in a cooling process after the single-crystal growth, the portion where the circumference length is redundant inside in the cross-sectional view is expanded to an outside of the crucible for growing a single-crystal.

Abstract: The present invention enables on-demand production of an organic photoelectric conversion element regardless of the timing of material synthesis. Provided is a method for producing an organic photoelectric conversion element that comprises a pair of electrodes including an anode and a cathode, and an active layer that is provided between the pair of electrodes and includes a ?-conjugated polymer, said method including a storing step of storing the ?-conjugated polymer in an enclosure container which has an atmosphere therein that suppresses increase in the electron spin concentration of the ?-conjugated polymer, and a step of forming the active layer using the ?-conjugated polymer after storage.

Abstract: A photoelectric conversion element capable of reducing a specific dark current. In a photoelectric conversion element (10) including an anode (12), a cathode (16), and an active layer (14) provided between the anode and the cathode, the active layer contains a p-type semiconductor material having a band gap of 0.5 eV to 1.58 eV, and an n-type semiconductor material, the n-type semiconductor material is a C60 fullerene derivative, and on an image obtained by binarizing an image of the active layer observed by a transmission electron microscope, the junction length between a phase of the n-type semiconductor material and a phase of the p-type semiconductor material is 120 ?m to 170 ?m per square micrometer of the area of the binarized image.

Abstract: An object is to provide an organic photoelectric conversion element having high durability. The present invention provides an organic photoelectric conversion element having an active layer between a cathode and an anode, characterized in that, the organic photoelectric conversion element includes a layer including a cured product obtained by curing a thermosetting resin composition between the anode and the active layer, and a transmittance of light with a wavelength of 380 nm to 780 nm is 10% or higher. The present invention provides the organic photoelectric conversion element in which the thermosetting resin composition includes one or more selected from the group consisting of polythiophene and derivatives thereof and a polymer compound including a repeating unit having an aromatic amine residue.

Abstract: To reduce a dark current. In a photoelectric conversion element (10) including an anode (12), a cathode (16), and an active layer (14) provided between the anode and the cathode, the active layer contains a p-type semiconductor material that is a polymer compound having a polystyrene-equivalent weight average molecular weight of 40,000 or more and 200,000 or less, and an n-type semiconductor material. On an image obtained by binarizing an image of the active layer observed by a transmission electron microscope, the junction length between a phase of the p-type semiconductor material and a phase of the n-type semiconductor material is 130 ?m or more and less than 200 ?m per square micrometer of the area of the binarized image.

Abstract: A die for EFG-based single crystal growth includes a lower surface to be immersed into a raw material melt with an impurity added, a rectangular upper surface facing a seed crystal and having a long side and a short side, and a plurality of slit sections extending from the lower surface to the upper surface and causing the raw material melt to ascend from the lower surface to the upper surface. Respective longitudinal directions of openings of the plurality of slit sections on the upper surface are parallel to one another and non-parallel to the long side of the upper surface.

Abstract: A photoelectric conversion element capable of reducing a specific dark current. In a photoelectric conversion element (10) including an anode (12), a cathode (16), and an active layer (14) provided between the anode and the cathode, the active layer contains a p-type semiconductor material having a band gap of 0.5 eV to 1.58 eV, and an n-type semiconductor material, the n-type semiconductor material is a C60 fullerene derivative, and on an image obtained by binarizing an image of the active layer observed by a transmission electron microscope, the junction length between a phase of the n-type semiconductor material and a phase of the p-type semiconductor material is 120 ?m to 170 ?m per square micrometer of the area of the binarized image.

Abstract: To improve detectivity. In a photoelectric conversion element (10) including an anode (12), a cathode (16), and an active layer (14) provided between the anode and the cathode, wherein the active layer contains a p-type semiconductor material being a polymer compound having an absorption peak wavelength of 800 nm or more, and an n-type semiconductor material, and the active layer has a thickness of 300 nm or more and less than 600 nm.

Abstract: An object of the present invention is to provide a Schottky barrier diode which is less likely to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 formed at a position surrounding the anode electrode 40 in a plan view. An electric field is dispersed by the presence of the outer peripheral trench 10 formed in the drift layer 30. This alleviates concentration of the electric field on the corner of the anode electrode 40, making it unlikely to cause dielectric breakdown.

Abstract: To reduce a dark current. In a photoelectric conversion element (10) including an anode (12), a cathode (16), and an active layer (14) provided between the anode and the cathode, the active layer contains a p-type semiconductor material that is a polymer compound having a polystyrene-equivalent weight average molecular weight of 40,000 or more and 200,000 or less, and an n-type semiconductor material. On an image obtained by binarizing an image of the active layer observed by a transmission electron microscope, the junction length between a phase of the p-type semiconductor material and a phase of the n-type semiconductor material is 130 ?m or more and less than 200 ?m per square micrometer of the area of the binarized image.

Abstract: An object is to provide an organic photoelectric conversion element having high durability. The present invention provides an organic photoelectric conversion element having an active layer between a cathode and an anode, characterized in that, the organic photoelectric conversion element includes a layer including a cured product obtained by curing a thermosetting resin composition between the anode and the active layer, and a transmittance of light with a wavelength of 380 nm to 780 nm is 10% or higher. The present invention provides the organic photoelectric conversion element in which the thermosetting resin composition includes one or more selected from the group consisting of polythiophene and derivatives thereof and a polymer compound including a repeating unit having an aromatic amine residue.

Abstract: An electric circuit module 100 is provided. The electric circuit module 100 includes a multi-layer substrate 10, and a plurality of electric parts 31 mounted on a top layer 10a of the multi-layer substrate 10. A plurality of land electrodes 11 that are necessary for normal operations are provided in a bottom layer of the multi-layer substrate 10. Test-use electrodes 13 connected to the electric parts 31 are provided in an inner layer 10c of the multi-layer substrate 10. The test-use electrodes 13 are not connected to the land electrodes 11. The test-use electrodes 13 are provided at a position at which the test-use electrodes 13 overlap the land electrodes 11 in a plan view.

Abstract: The present invention provides a program and a computer capable of easily updating, setting up, or testing a control program stored in a storage unit of a peripheral device connected to the computer. In order to update, test, or set up a control program stored in a storage unit 2a of a peripheral device 2 using a computer 1, the program allows the computer 1 to execute a step S1 of changing a first identification information stored in the storage unit 2a of the peripheral device 2 to a second identification information; a step S2 of re-recognizing the peripheral device 2; and a step S4 of updating, testing, or setting up the control program.

Abstract: An optical-electric printed wiring board includes an electric wiring substrate having electric interconnects, and an optical wiring layer stacked on the electric wiring substrate and having a surface on which an optical part is mounted. The optical wiring layer includes a core for propagating light, a clad for sandwiching the core, and a mirror for reflecting light propagating in the core toward an optical part mounted on the optical wiring layer, or reflecting light from an optical part into the core. The electric wiring substrate includes conductive setting portions each of which extends through the optical wiring layer in the direction of stacking and has an end face on which an optical part is set. These conductive setting portions obtain electrical conduction between the optical part and the electric interconnects.

Abstract: An optical-electric printed wiring board includes an electric wiring substrate having electric interconnects, and an optical wiring layer stacked on the electric wiring substrate and having a surface on which an optical part is mounted. The optical wiring layer includes a core for propagating light, a clad for sandwiching the core, and a mirror for reflecting light propagating in the core toward an optical part mounted on the optical wiring layer, or reflecting light from an optical part into the core. The electric wiring substrate includes conductive setting portions each of which extends through the optical wiring layer in the direction of stacking and has an end face on which an optical part is set. These conductive setting portions obtain electrical conduction between the optical part and the electric interconnects.