Patents by Inventor Daisuke Iwanaga
Daisuke Iwanaga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6995968Abstract: In order to provide dielectric ceramic composition having low IR defect rate and high relative dielectric constant even when the multilayer ceramic capacitor is made thinner, dielectric ceramic composition including a main component expressed by a composition formula {{Ba(1-x)Cax}O}A{Ti(1-y-z)ZryMgz}BO2 and subcomponents of Mn oxide, Y oxide, V oxide and Si oxide is provided. In the above formula, A, B, x, y and z are as follows: 0.995?A/B?1.020, 0.0001?x?0.07, preferably 0.001?x<0.05, 0.1?y?0.3 and 0.0005?z?0.01, preferably 0.003?z?0.01.Type: GrantFiled: September 29, 2004Date of Patent: February 7, 2006Assignee: TDK CorporationInventors: Kazushige Ito, Shunichi Yuri, Yukie Nakano, Mari Miyauchi, Takako Hibi, Daisuke Iwanaga, Masakazu Hosono
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Publication number: 20060023398Abstract: A capacitor 10 (laminated ceramic capacitor) according to the present invention comprises a capacitor body 11 wherein internal electrodes 12 and a dielectric layer 14 are alternately laminated, and external electrodes 15 are provided on the end faces thereof In this capacitor body 11, high resistance layers 24 are provided between the internal electrodes 12 and dielectric layer 14. These high resistance layers 24 contain a ceramic material, an element comprising at least one selected from a group comprising Mn, Cr, Co, Fe, Cu, Ni, Mo and V, and/or a rare earth element.Type: ApplicationFiled: July 29, 2005Publication date: February 2, 2006Applicant: TDK CorporationInventor: Daisuke Iwanaga
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Publication number: 20050282403Abstract: A ceramic electronic device having a dielectric layer, wherein the dielectric layer includes a main component containing a (Ba, Ca (Ti, Zr)O3 based material and a subcomponent containing an oxide of Si; and a content of the Si oxide is 0 to 0.4 wt % (note that 0 is not included) with respect to the entire dielectric layer; and preferably the dielectric layer has a segregation phase; and the segregation phase contains an oxide of Si and substantially not containing an oxide of Li; by which it is possible to provide a ceramic electronic device, such as a multilayer ceramic capacitor, having a low IR defect rate (initial insulation resistance defect rate), excellent high temperature load lifetime and high reliability.Type: ApplicationFiled: June 13, 2005Publication date: December 22, 2005Applicant: TDK CORPORATIONInventors: Kazushige Ito, Daisuke Iwanaga, Akira Sato
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Publication number: 20050111163Abstract: In order to provide dielectric ceramic composition having low IR defect rate and high relative dielectric constant even when the multilayer ceramic capacitor is made thinner, dielectric ceramic composition including a main component expressed by a composition formula {{Ba(1-x)Cax}O}A{Ti(1-y-z)ZryMgz}BO2 and subcomponents of Mn oxide, Y oxide, V oxide and Si oxide is provided. In the above formula, A, B, x , y and z are as follows: 0.995?A/B?1.020, 0.0001?x?0.07, preferably 0.001?x?0.05, 0.1?y?0.3 and 0.0005?z?0.0 1, preferably 0.003?z?0.0 1.Type: ApplicationFiled: September 29, 2004Publication date: May 26, 2005Applicant: TDK CorporationInventors: Kazushige Ito, Shunichi Yuri, Yukie Nakano, Mari Miyauchi, Takako Hibi, Daisuke Iwanaga, Masakazu Hosono
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Patent number: 6785121Abstract: A multilayer ceramic capacitor having internal electrode layers and dielectric layers with dielectric particles is disclosed. An average particle diameter of the dielectric particles, when measured parallel with the direction of the internal electrode layers, is larger than a thickness of the dielectric layer. A ratio (R/d) between the average particle diameter (R) and the thickness (d) of the dielectric layer is 1<R/d<3.Type: GrantFiled: May 29, 2001Date of Patent: August 31, 2004Assignee: TDK CorporationInventors: Yukie Nakano, Shunichi Yuri, Mari Miyauchi, Daisuke Iwanaga
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Patent number: 6723192Abstract: A composite substrate in which the surface of the insulating layer is not influenced by the electrode layer and which requires neither a grinding process nor a sol-gel process, is easy to produce and can provide a thin-film EL device having a high display quality when used therein; a thin-film EL device using the substrate; and a production process for the device. The thin-film EL device is produced by forming a luminescent layer, other insulating layer and other electrode layer successively on a composite substrate comprising a substrate; an electrode layer embedded in the substrate in such a manner that the electrode layer and the substrate are in one plane; and an insulating layer formed on the surface of a composite comprising the substrate and the electrode layer.Type: GrantFiled: February 26, 2002Date of Patent: April 20, 2004Assignee: TDK CorporationInventors: Katsuto Nagano, Taku Takeishi, Suguru Takayama, Takeshi Nomura, Yukie Nakano, Daisuke Iwanaga
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Publication number: 20040051216Abstract: A method of producing a multilayer ceramic capacitor having internal electrode layers and dielectric layers with dielectric particles is disclosed. An average particle diameter of the dielectric particles, when measured parallel with the direction of the internal electrode layers, is larger than a thickness of the dielectric layer. A ratio (R/d) between the average particle diameter (R) and the thickness (d) of the dielectric layer is 1<R/d<3.Type: ApplicationFiled: August 5, 2003Publication date: March 18, 2004Applicant: TDK CORPORATIONInventors: Yuki Nakano, Shunichi Yuri, Mari Miyauchi, Daisuke Iwanaga
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Patent number: 6493207Abstract: The invention provides a multilayer ceramic capacitor capable of preventing the occurrence of cracks by inhibiting the multilayer capacitor from expanding in a stacking direction and a width direction. The multilayer ceramic capacitor includes a capacitor element (10) in which dielectric layers (11a and 11b) and internal electrodes (12) are alternately stacked. The capacitor element (10) is obtained by stacking and firing a dielectric paste layer and an internal electrode paste layer. An expansion coefficient x in the stacking direction lies between −0.05i% and 0.05i% inclusive, where i denotes the number of dielectric layers (11a), preferably the expansion coefficient x is 0% or less, or more preferably the expansion coefficient x lies between −10% and 0% inclusive. Preferably, an expansion coefficient y in the width direction lies between −0.05i% and 0% inclusive.Type: GrantFiled: June 26, 2001Date of Patent: December 10, 2002Assignee: TDK CorporationInventors: Yukie Nakano, Takako Hibi, Mari Miyauchi, Daisuke Iwanaga
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Publication number: 20020172832Abstract: A composite substrate in which the surface of the insulating layer is not influenced by the electrode layer and which requires neither a grinding process nor a sol-gel process, is easy to produce and can provide a thin-film EL device having a high display quality when used therein; a thin-film EL device using the substrate; and a production process for the device. The thin-film EL device is produced by forming a luminescent layer, other insulating layer and other electrode layer successively on a composite substrate comprising a substrate; an electrode layer embedded in the substrate in such a manner that the electrode layer and the substrate are in one plane; and an insulating layer formed on the surface of a composite comprising the substrate and the electrode layer.Type: ApplicationFiled: February 26, 2002Publication date: November 21, 2002Applicant: TDK CORPORATIONInventors: Katsuto Nagano, Taku Takeishi, Suguru Takayama, Takeshi Nomura, Yukie Nakano, Daisuke Iwanaga
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Patent number: 6428914Abstract: A composite substrate in which the surface of the insulating layer is not influenced by the electrode layer and which requires neither a grinding process nor a sol-gel process, is easy to produce and can provide a thin-film EL device having a high display quality when used therein; a thin-film EL device using the substrate; and a production process for the device. The thin-film EL device is produced by forming a luminescent layer, other insulating layer and other electrode layer successively on a composite substrate comprising a substrate; an electrode layer embedded in the substrate in such a manner that the electrode layer and the substrate are in one plane; and an insulating layer formed on the surface of a composite comprising the substrate and the electrode layer.Type: GrantFiled: December 7, 2000Date of Patent: August 6, 2002Assignee: TDK CorporationInventors: Katsuto Nagano, Taku Takeishi, Suguru Takayama, Takeshi Nomura, Yukie Nakano, Daisuke Iwanaga
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Publication number: 20020075632Abstract: A multilayer ceramic capacitor comprises internal electrode layers and dielectric layers. An average particle diameter (R), in a direction parallel with said internal electrode layer, in dielectric particles constituting said dielectric layers is larger than a thickness (d) of said dielectric layer. A ratio (R/d) between the average particle diameter (R) and the thickness (d) of the dielectric layer is 1<R/d<3.Type: ApplicationFiled: May 29, 2001Publication date: June 20, 2002Applicant: TDK CORPORATIONInventors: Yukie Nakano, Shunichi Yuri, Mari Miyauchi, Daisuke Iwanaga
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Publication number: 20010055192Abstract: Disclosed is a multilayer capacitor capable of preventing the occurrence of cracks by inhibiting the multilayer capacitor from expanding in a stacking direction and a width direction. The multilayer capacitor comprises a capacitor element (10) in which dielectric layers (11a and 11b) and internal electrodes (12) are alternately stacked. The capacitor element (10) is obtained by stacking and firing a dielectric paste layer and an internal electrode paste layer. An expansion coefficient x in the stacking direction lies between −0.05i % and 0.05i % inclusive, where i denotes the number of dielectric layers (11a), preferably the expansion coefficient x is 0% or less, or more preferably the expansion coefficient x lies between −10% and 0% inclusive. Preferably, an expansion coefficient y in the width direction lies between −0.05i % and 0% inclusive.Type: ApplicationFiled: June 26, 2001Publication date: December 27, 2001Applicant: TDK CORPORATIONInventors: Yukie Nakano, Takako Hibi, Mari Miyauchi, Daisuke Iwanaga
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Publication number: 20010003614Abstract: A composite substrate in which the surface of the insulating layer is not influenced by the electrode layer and which requires neither a grinding process nor a sol-gel process, is easy to produce and can provide a thin-film EL device having a high display quality when used therein; a thin-film EL device using the substrate; and a production process for the device. The thin-film EL device is produced by forming a luminescent layer, other insulating layer and other electrode layer successively on a composite substrate comprising a substrate; an electrode layer embedded in the substrate in such a manner that the electrode layer and the substrate are in one plane; and an insulating layer formed on the surface of a composite comprising the substrate and the electrode layer.Type: ApplicationFiled: December 7, 2000Publication date: June 14, 2001Applicant: TDK CORPORATIONInventors: Katsuto Nagano, Taku Takeishi, Suguru Takayama, Takeshi Nomura, Yukie Nakano, Daisuke Iwanaga