Patents by Inventor Daisuke Kan

Daisuke Kan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MIST CVD FILM FORMATION DEVICE AND FILM FORMATION METHOD
    Publication number: 20240175128
    Abstract: A mist CVD film formation device that includes: a film forming chamber including: a mist inflow port through which a film forming mist containing a mist of a film forming raw material and a carrier gas flows into the film forming chamber, a stage that supports a film forming target, and a mist outflow port through which the film forming mist flows out of the film forming chamber, wherein an outflow port sectional area is smaller than a film forming chamber interior sectional area; and a heater that heats the stage.
    Type: Application
    Filed: February 5, 2024
    Publication date: May 30, 2024
    Inventors: Hiroshi SHIRAKI, Daisuke KAN, Yuichi SHIMAKAWA
  • LEAD-FREE PIEZOCERAMIC MATERIALS
    Publication number: 20120119623
    Abstract: The present invention relates to lead-free piezoelectric ceramic materials comprising crystalline (and preferably perovskite crystalline) structures of the formula Bi1-x(RE)xFeO3, where RE is one or more of La, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and 0?x?0.3. The materials are at or near the morphotropic phase boundary and display enhanced piezoelectric and dielectric properties.
    Type: Application
    Filed: February 26, 2009
    Publication date: May 17, 2012
    Applicant: UNIVERSITY OF MARYLAND COLLEGE PARK
    Inventors: Ichiro Takeuchi, Fujino Shigehiro, Makoto Murakami, Sung Hwan Lim, Daisuke Kan
  • Lead-free piezoceramic materials
    Patent number: 8179025
    Abstract: The present invention relates to lead-free piezoelectric ceramic materials comprising crystalline (and preferably perovskite crystalline) structures of the formula Bi1-x(RE)xFeO3, where RE is one or more of La, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and 0?x?0.3. The materials are at or near the morphotropic phase boundary and display enhanced piezoelectric and dielectric properties.
    Type: Grant
    Filed: February 26, 2009
    Date of Patent: May 15, 2012
    Assignee: University of Maryland College Park
    Inventors: Ichiro Takeuchi, Fujino Shigehiro, Makoto Murakami, Sung Hwan Lim, Daisuke Kan