Patents by Inventor Daisuke Kitamaru

Daisuke Kitamaru has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for calculating threshold voltage of pocket implant MOSFET
    Patent number: 7096129
    Abstract: A threshold voltage model with an impurity concentration profile in a channel direction taken into account is provided in the pocket implant MOSFET. With penetration length of the implanted pocket in the channel direction and the maximum impurity concentration of the implant pocket used as physical parameters, the threshold voltage model is obtained by linearly approximating the profile in the channel direction. By analytically solving the model by using a new threshold condition with inhomogeneous profile taken into account, the threshold voltage can be accurately obtained. Based on thus obtained model, the threshold voltage can be predicted and can be used for circuit design.
    Type: Grant
    Filed: August 25, 2004
    Date of Patent: August 22, 2006
    Assignee: Semiconductor Technology Academic Research Center
    Inventors: Daisuke Kitamaru, Michiko Miura
  • Method for calculating threshold voltage of pocket implant MOSFET
    Patent number: 6909976
    Abstract: A threshold voltage model with an impurity concentration profile in a channel direction taken into account is provided in the pocket implant MOSFET. With penetration length of the implanted pocket in the channel direction and the maximum impurity concentration of the implant pocket used as physical parameters, the threshold voltage model is obtained by linearly approximating the profile in the channel direction. By analytically solving the model by using a new threshold condition with inhomogeneous profile taken into account, the threshold voltage can be accurately obtained. Based on thus obtained model, the threshold voltage can be predicted and can be used for circuit design.
    Type: Grant
    Filed: August 30, 2002
    Date of Patent: June 21, 2005
    Assignee: Semiconductor Technology Academic Research Center
    Inventors: Daisuke Kitamaru, Michiko Miura
  • Method for calculating threshold voltage of pocket implant MOSFET
    Publication number: 20050086014
    Abstract: A threshold voltage model with an impurity concentration profile in a channel direction taken into account is provided in the pocket implant MOSFET. With penetration length of the implanted pocket in the channel direction and the maximum impurity concentration of the implant pocket used as physical parameters, the threshold voltage model is obtained by linearly approximating the profile in the channel direction. By analytically solving the model by using a new threshold condition with inhomogeneous profile taken into account, the threshold voltage can be accurately obtained. Based on thus obtained model, the threshold voltage can be predicted and can be used for circuit design.
    Type: Application
    Filed: August 25, 2004
    Publication date: April 21, 2005
    Inventors: Daisuke Kitamaru, Michiko Miura
  • Method for calculating threshold voltage of pocket implant mosfet
    Publication number: 20030082839
    Abstract: A threshold voltage model with an impurity concentration profile in a channel direction taken into account is provided in the pocket implant MOSFET. With penetration length of the implanted pocket in the channel direction and the maximum impurity concentration of the implant pocket used as physical parameters, the threshold voltage model is obtained by linearly approximating the profile in the channel direction. By analytically solving the model by using a new threshold condition with inhomogeneous profile taken into account, the threshold voltage can be accurately obtained. Based on thus obtained model, the threshold voltage can be predicted and can be used for circuit design.
    Type: Application
    Filed: August 30, 2002
    Publication date: May 1, 2003
    Inventors: Daisuke Kitamaru, Michiko Miura