Patents by Inventor Daisuke Kodama
Daisuke Kodama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120305416Abstract: Disclosed is a kit for hair dyeing or bleaching which includes: a first part containing an alkali agent; a second part containing an oxidizing agent; and an openable and closable airtight container into which the first and second parts are charged so as to form foam of a mixture thereof. Also disclosed is a method for dyeing or bleaching hair, which includes the following steps (a) to (d) or steps (a) to (e): (a) charging a first part containing an alkali agent and a second part containing an oxidizing agent into the main body of an openable and closable airtight container, (b) hermetically sealing the airtight container, (c) forming foam by shaking the airtight container, (d) taking out the formed foam from the airtight container and applying the foam to hair, and (e) re-foaming the applied foam on the hair.Type: ApplicationFiled: February 8, 2011Publication date: December 6, 2012Applicant: KAO CorporationInventors: Hajime Miyabe, Masakazu Yamaguchi, Takashi Kanda, Takashi Yamada, Daisuke Kodama
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Patent number: 8169080Abstract: A seal ring is provided between a region where a circuit is formed on a semiconductor substrate and a dicing region. The seal ring has a portion where sealing layers of which the cross sectional form is in T-shape are layered and a portion where sealing layers of which the cross sectional form is rectangular are layered.Type: GrantFiled: November 5, 2010Date of Patent: May 1, 2012Assignee: Renesas Electronics CorporationInventors: Noboru Morimoto, Masahiko Fujisawa, Daisuke Kodama
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Patent number: 8097948Abstract: To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen.Type: GrantFiled: September 13, 2010Date of Patent: January 17, 2012Assignee: Renesas Electronics CorporationInventors: Takeshi Furusawa, Daisuke Kodama, Masahiro Matsumoto, Hiroshi Miyazaki
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Publication number: 20110101530Abstract: A seal ring is provided between a region where a circuit is formed on a semiconductor substrate and a dicing region. The seal ring has a portion where sealing layers of which the cross sectional form is in T-shape are layered and a portion where sealing layers of which the cross sectional form is rectangular are layered.Type: ApplicationFiled: November 5, 2010Publication date: May 5, 2011Applicant: Renesas Technology Corp.Inventors: Noboru MORIMOTO, Masahiko Fujisawa, Daisuke Kodama
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Patent number: 7884011Abstract: A seal ring is provided between a region where a circuit is formed on a semiconductor substrate and a dicing region. The seal ring has a portion where sealing layers of which the cross sectional form is in T-shape are layered and a portion where sealing layers of which the cross sectional form is rectangular are layered.Type: GrantFiled: March 10, 2010Date of Patent: February 8, 2011Assignee: Renesas Electronics CorporationInventors: Noboru Morimoto, Masahiko Fujisawa, Daisuke Kodama
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Publication number: 20100327449Abstract: To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen.Type: ApplicationFiled: September 13, 2010Publication date: December 30, 2010Applicant: Renesas Electronics CorporationInventors: Takeshi FURUSAWA, Daisuke Kodama, Masahiro Matsumoto, Hiroshi Miyazaki
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Patent number: 7816268Abstract: To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen.Type: GrantFiled: February 26, 2010Date of Patent: October 19, 2010Assignee: Renesas Elecronics CorporationInventors: Takeshi Furusawa, Daisuke Kodama, Masahiro Matsumoto, Hiroshi Miyazaki
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Publication number: 20100167525Abstract: A seal ring is provided between a region where a circuit is formed on a semiconductor substrate and a dicing region. The seal ring has a portion where sealing layers of which the cross sectional form is in T-shape are layered and a portion where sealing layers of which the cross sectional form is rectangular are layered.Type: ApplicationFiled: March 10, 2010Publication date: July 1, 2010Applicant: Renesas Technology Corp.Inventors: Noboru Morimoto, Masahiko Fujisawa, Daisuke Kodama
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Publication number: 20100151673Abstract: To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen.Type: ApplicationFiled: February 26, 2010Publication date: June 17, 2010Applicant: Renesas Technology Corp.Inventors: Takeshi Furusawa, Daisuke Kodama, Masahiro Matsumoto, Hiroshi Miyazaki
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Publication number: 20100126523Abstract: Foam quality and discharge properties are improved by using a squeeze container to discharge a mixed solution of first and second agents of a two-part hair cosmetic for hair dyeing or bleaching in a foam. A two-part hair cosmetic 1 for hair dyeing or bleaching includes a first agent A1 containing an alkaline agent and a second agent A2 containing hydrogen peroxide and a squeeze container 6 for discharging a mixed solution A3 of the first agent A1 and the second agent A2. The first agent A1 or second agent A2 contains a foaming agent. The mixed solution A3 thereof has a viscosity (25° C.) of from 1 mPa·s to 100 mPa·s. A squeeze foamer 5 of the squeeze container 6 has a gas-liquid mixing chamber 12 for causing the mixed solution to foam, foam homogenizing means 14 for homogenizing foam of the mixed solution which has been made to foam in the gas-liquid mixing chamber 12, and a discharge outlet 17 for discharging the homogenized foam.Type: ApplicationFiled: April 25, 2008Publication date: May 27, 2010Applicant: KAO CORPORATIONInventors: Hiroyuki Fujinuma, Shuhei Matsumoto, Tetsuya Chiba, Yoshinori Inagawa, Daisuke Kodama
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Patent number: 7714413Abstract: A seal ring is provided between a region where a circuit is formed on a semiconductor substrate and a dicing region. The seal ring has a portion where sealing layers of which the cross sectional form is in T-shape are layered and a portion where sealing layers of which the cross sectional form is rectangular are layered.Type: GrantFiled: October 19, 2006Date of Patent: May 11, 2010Assignee: Renesas Technology Corp.Inventors: Noboru Morimoto, Masahiko Fujisawa, Daisuke Kodama
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Patent number: 7700487Abstract: To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen.Type: GrantFiled: January 12, 2007Date of Patent: April 20, 2010Assignee: Renesas Technology Corp.Inventors: Takeshi Furusawa, Daisuke Kodama, Masahiro Matsumoto, Hiroshi Miyazaki
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Publication number: 20090289367Abstract: A copper interconnection layer is formed in an interconnection trench at a surface of an interlayer insulating film. A diffusion preventing insulating film is formed to cover the copper interconnection layer and is made of at least one of SiC and SiCN. An insulating film is formed on the copper interconnection layer with the diffusion preventing insulating film interposed and is made of SiN.Type: ApplicationFiled: May 26, 2009Publication date: November 26, 2009Inventors: Daisuke KODAMA, Shoichi Fukui, Hiroshi Miyazaki, Tatsunori Murata
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Publication number: 20070167010Abstract: To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen.Type: ApplicationFiled: January 12, 2007Publication date: July 19, 2007Applicant: Renesas Technology Corp.Inventors: Takeshi FURUSAWA, Daisuke KODAMA, Masahiro MATSUMOTO, Hiroshi MIYAZAKI
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Publication number: 20070090447Abstract: A seal ring is provided between a region where a circuit is formed on a semiconductor substrate and a dicing region. The seal ring has a portion where sealing layers of which the cross sectional form is in T-shape are layered and a portion where sealing layers of which the cross sectional form is rectangular are layered.Type: ApplicationFiled: October 19, 2006Publication date: April 26, 2007Applicant: Renesas Technology Corp.Inventors: Noboru MORIMOTO, Masahiko Fujisawa, Daisuke Kodama
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Patent number: 6864584Abstract: In extremely minute copper wiring the width or the thickness of which is equal to or shorter than approximately the double length of the mean free path of a copper atom, a value of the resistance may be larger, compared with aluminum wiring of the same extent and it is difficult to realize wiring having small resistance. To solve such a problem, aluminum wiring is used for wiring having form in which the respective resistivities ? of both wirings have the relation of ?Al<?Cu and copper wiring is used for wiring having form in which the respective resistivities ? of both wirings have the relation of ?Al??Cu. As a result, a semiconductor device which has small resistance, transmits a signal at high speed and is provided with a multilayer wiring layer can be realized.Type: GrantFiled: October 18, 2002Date of Patent: March 8, 2005Assignee: Hitachi, Ltd.Inventors: Yuko Hanaoka, Kenji Hinode, Kenichi Takeda, Daisuke Kodama, Noriyuki Sakuma
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Publication number: 20030080433Abstract: In extremely minute copper wiring the width or the thickness of which is equal to or shorter than approximately the double length of the mean free path of a copper atom, a value of the resistance may be larger, compared with aluminum wiring of the same extent and it is difficult to realize wiring having small resistance. To solve such a problem, aluminum wiring is used for wiring having form in which the respective resistivities &rgr; of both wirings have the relation of &rgr;Al<&rgr;Cu and copper wiring is used for wiring having form in which the respective resistivities &rgr; of both wirings have the relation of &rgr;Al≧&rgr;Cu. As a result, a semiconductor device which has small resistance, transmits a signal at high speed and is provided with a multilayer wiring layer can be realized.Type: ApplicationFiled: October 18, 2002Publication date: May 1, 2003Inventors: Yuko Hanaoka, Kenji Hinode, Kenichi Takeda, Daisuke Kodama, Noriyuki Sakuma