Abstract: A sealing composition which can be handled in a semi-cured state and can obtain a sintered body having excellent joining strength and sealing performance is provided. A sealing composition including a solder powder, coated silver particles including silver core particles and a coating agent arranged on a surface of the silver core particles, and a solvent is provided. Further, a sintering temperature (T2) of the coated silver particles and a boiling point (T3) of the solvent satisfy T2?T3.

Abstract: A dilator that includes a hollow shaft including a tapered section having a diameter increasing from a distal end toward a proximal end, and a spirally-arranged protruding portion provided on an outer peripheral surface of the hollow shaft and including spirally-arranged protruding sections and gaps between adjacent spirally-arranged protruding sections along an axial direction of the hollow shaft. The spirally-arranged protruding portion includes an apex section having the greatest height from the outer peripheral surface in a transverse cross-section thereof, and a side surface section facing outward and extending from the apex section toward the outer peripheral surface. The side surface section includes an inclined surface inclined substantially linearly toward at least one of the distal and proximal end direction between the outer peripheral surface and the apex section in the transverse cross-section of the spirally-arranged protruding portion.

Abstract: A object cutting method includes a first step of attaching an expandable sheet to a front surface or a back surface of a object, a second step of irradiating the object with a laser light along a line to cut to form a modified region, and expanding the expandable sheet to divide at least a part of the object into a plurality of chips and to form a gap that exists between the chips and extends to a side surface crossing the front surface and the back surface of the object, a third step of, after the second step, filling the gap with a resin from an outer edge portion including the side surface of the object, a fourth step of, after the third step, curing and shrinking the resin, and a fifth step of, after the fourth step, taking out the chips from the expandable sheet.

Abstract: A user device communicates with base stations in a radio communication system including the base stations. The user device includes a receiver that receives a first downlink control signal transmitted from one of the base stations, a transmitter that transmits uplink signals using multiple antenna ports or multiple beams, and a controller that controls, for each subframe, transmission timing of the uplink signals transmitted using the multiple antenna ports or the multiple beams, based on the first downlink control signal.

Abstract: A user device communicates with base stations in a radio communication system including the base stations. The user device includes a receiver that receives a first downlink control signal transmitted from one of the base stations, a transmitter that transmits uplink signals using multiple antenna ports or multiple beams, and a controller that controls, for each subframe, transmission timing of the uplink signals transmitted using the multiple antenna ports or the multiple beams, based on the first downlink control signal.

Abstract: A nitride semiconductor device is provide that can reduce contact resistance of an ohmic electrode and a nitride semiconductor layer. In a GaN HFET, recesses (106, 109) are formed in a nitride semiconductor multilayer body (20) composed of an undoped GaN layer (1) and an undoped AlGaN layer (2) formed on an Si substrate (10), and a source electrode (11) and a drain electrode (12) are formed in the recesses (106, 109). In a region deeper than an interface (S1, S2) between the GaN layer (1) and the source electrode (11) and drain electrode (12), which are formed from a TiAl material, a first chlorine concentration peak (P11) is formed in vicinity of the interface, and a second chlorine concentration peak (P22) having a chlorine concentration of 1.3×1017 cm?3 or lower is formed at a position deeper than the first chlorine concentration peak (P11).

Abstract: According to an electrode structure of an embodiment of the invention, an ohmic electrode is provided from recess to a surface of an insulating film without being in contact with the surface of the nitride semiconductor multilayer body, so that the insulating film covers the surface of the AlGaN barrier layer. Accordingly, during the formation process of the ohmic electrode by dry etching, the surface of the nitride semiconductor multilayer body can be protected by the insulating film.

Abstract: A nitride semiconductor device is provide that can reduce contact resistance of an ohmic electrode and a nitride semiconductor layer. In a GaN HFET, recesses (106, 109) are formed in a nitride semiconductor multilayer body (20) composed of an undoped GaN layer (1) and an undoped AlGaN layer (2) formed on an Si substrate (10), and a source electrode (11) and a drain electrode (12) are formed in the recesses (106, 109). In a region deeper than an interface (S1, S2) between the GaN layer (1) and the source electrode (11) and drain electrode (12), which are formed from a TiAl material, a first chlorine concentration peak (P11) is formed in vicinity of the interface, and a second chlorine concentration peak (P22) having a chlorine concentration of 1.3×1017 cm?3 or lower is formed at a position deeper than the first chlorine concentration peak (P11).

Abstract: An antenna device (10) includes a first antenna pattern (100), a second antenna pattern (200), and a frequency characteristic adjustment unit (400. The first antenna pattern (100) includes a feeding point (14). The second antenna pattern (200) is fed from the feeding point (14) similarly to the first antenna pattern (100). The frequency characteristic adjustment unit (400) is connected to the feeding point (14). The frequency characteristic adjustment unit (400) changes a frequency characteristic of at least one of the first antenna pattern (100) and the second antenna pattern (200).

Abstract: A hand phantom for evaluating a mobile apparatus disclosed wherein the hand phantom includes a thumb part, an index finger part, a middle finger part, a ring finger part and a pinky finger part, and in an XY coordinate system where for the mobile apparatus being held, an orientation of a thumb along a width direction of the mobile apparatus is defined as a +X direction, an orientation of a bottom edge of the mobile apparatus along a longitudinal axis of a body of the mobile apparatus is defined as a +Y direction, and a center of a pointing device array of the mobile apparatus is defined as a coordinate origin, the thumb part is arranged within a range of ±6.2 mm in the X direction and ±12.1 mm in the Y direction around a coordinate (X, Y)=(?1 mm, 7 mm) in the XY coordinate system.

Abstract: There is provided a multi-antenna measurement method of measuring a device under test having at least two receive antennas and capable of considering the spatial correlation between antennas in a simpler configuration. Two different uncorrelated signal sequences “a” and “b” are generated by the pseudo base transceiver station 4. These signal sequences “a” and “b” are transmitted as radio waves from positions (positions of transmitting antenna elements 31 and 32) of the two base angles of the isosceles triangle toward the device under test 1 provided at a position of the apex angle respectively to measure the received antennas by receive antennas of the device under test 1. This method is easy to calibrate and can consider the spatial correlation between antennas in a simpler configuration.