Abstract: Provided herein are a gas sensor element in which deformation of a sensitive portion due to stress may be reduced and a method of manufacturing the gas sensor element. A base insulating layer 9 including a heater wiring pattern 19 is formed on a front surface 3A of a support 3. The base insulating layer 9 includes a fixed portion 15 fixed to the front surface 3A of the support 3, and a nonfixed portion 17 located over an opening portion 5. A cavity portion 7 having the opening portion 5 is formed in the support 3. An electrode wiring pattern 27 and a sensitive film 31 are formed over a central portion 21 of the nonfixed portion 17 of the base insulating layer 9. The nonfixed portion 17 includes the central portion 21 and a plurality of connecting portions 23 connecting the central portion 21 and the fixed portion 15. Four connecting portions 23 each include a base portion 33 and an extended portion 35.

Abstract: The present invention relates to a thermoplastic resin composition obtained by compounding phosphoric acid and/or monosodium phosphate (D) with a resin composition including a styrenebased resin (A), a graft copolymer (B), and an aliphatic polyester resin (C), wherein the thermoplastic resin composition is excellent in mechanical properties (e.g., impact resistance) and thermal stability, and, in addition, can be molded without any problem in terms of safety and hygiene.

Abstract: The present invention relates to a thermoplastic resin composition obtained by compounding phosphoric acid and/or monosodium phosphate (D) with a resin composition including a styrenebased resin (A), a graft copolymer (B), and an aliphatic polyester resin (C), wherein the thermoplastic resin composition is excellent in mechanical properties (e.g., impact resistance) and thermal stability, and, in addition, can be molded without any problem in terms of safety and hygiene.

Abstract: Provided is a manufacturing method of a metal oxide semiconductor material for gas sensors by which an oxide precursor and noble metal colloid particles will not readily cohere in the manufacturing process. The manufacturing process implements a precursor solution synthesis step 1 of synthesizing an oxide precursor solution in which an oxide precursor is dispersed, a pH adjustment step 3 of adjusting the pH of the oxide precursor solution, a precursor-colloid dispersion preparation step 5 of preparing an oxide precursor-noble metal colloid dispersion in which the oxide precursor and the noble metal colloid are dispersed substantially uniformly, a purifying step 7 of purifying the oxide precursor-noble metal colloid dispersion to obtain a purified oxide precursor noble metal colloid dispersion, and a freeze-drying step 11 of freeze-drying an precipitate of the purified oxide precursor-noble metal colloid dispersion.

Abstract: Provided herein are a gas sensor element in which deformation of a sensitive portion due to stress may be reduced and a method of manufacturing the gas sensor element. A base insulating layer 9 including a heater wiring pattern 19 is formed on a front surface 3A of a support 3. The base insulating layer 9 includes a fixed portion 15 fixed to the front surface 3A of the support 3, and a nonfixed portion 17 located over an opening portion 5. A cavity portion 7 having the opening portion 5 is formed in the support 3. An electrode wiring pattern 27 and a sensitive film 31 are formed over a central portion 21 of the nonfixed portion 17 of the base insulating layer 9. The nonfixed portion 17 includes the central portion 21 and a plurality of connecting portions 23 connecting the central portion 21 and the fixed portion 15. Four connecting portions 23 each include a base portion 33 and an extended portion 35.

Abstract: Provided is a manufacturing method of a metal oxide semiconductor material for gas sensors by which an oxide precursor and noble metal colloid particles will not readily cohere in the manufacturing process. The manufacturing process implements a precursor solution synthesis step 1 of synthesizing an oxide precursor solution in which an oxide precursor is dispersed, a pH adjustment step 3 of adjusting the pH of the oxide precursor solution, a precursor-colloid dispersion preparation step 5 of preparing an oxide precursor-noble metal colloid dispersion in which the oxide precursor and the noble metal colloid are dispersed substantially uniformly, a purifying step 7 of purifying the oxide precursor-noble metal colloid dispersion to obtain a purified oxide precursor noble metal colloid dispersion, and a freeze-drying step 11 of freeze-drying an precipitate of the purified oxide precursor-noble metal colloid dispersion.