Patents by Inventor Daisuke Makibuchi
Daisuke Makibuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9660171Abstract: An electronic component has a mounting board, a bump located on a mounting surface of the mounting board, a SAW device located on the bump and connected to the bump. The SAW device has an element substrate, an excitation electrode located on the first primary surface of the element substrate, a pad located on the first primary surface and connected to the excitation electrode, and a cover located above the excitation electrode and formed with a pad exposure portion on the pad. Further, the SAW device makes the top surface of the cover face the mounting surface, makes the bump be located in the pad exposure portion, and makes the pad abut against the bump.Type: GrantFiled: April 9, 2012Date of Patent: May 23, 2017Assignee: KYOCERA CORPORATIONInventors: Yasutaka Ohashi, Masaki Nambu, Yusuke Morimoto, Daisuke Makibuchi, Takanori Ikuta
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Publication number: 20140042870Abstract: An electronic component has a mounting board, a bump located on a mounting surface of the mounting board, a SAW device located on the bump and connected to the bump. The SAW device has an element substrate, an excitation electrode located on the first primary surface of the element substrate, a pad located on the first primary surface and connected to the excitation electrode, and a cover located above the excitation electrode and formed with a pad exposure portion on the pad. Further, the SAW device makes the top surface of the cover face the mounting surface, makes the bump be located in the pad exposure portion, and makes the pad abut against the bump.Type: ApplicationFiled: April 9, 2012Publication date: February 13, 2014Applicant: KYOCERA CORPORATIONInventors: Yasutaka Ohashi, Masaki Nambu, Yusuke Morimoto, Daisuke Makibuchi, Takanori Ikuta
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Patent number: 8552622Abstract: An acoustic wave device according to one embodiment of the present invention has a base with a vibrating body, a sealing member which is joined to the base in a frame-shaped region surrounding the vibrating body and faces the vibrating body with a space therebetween, and an intermediate layer between the frame-shaped region of the sealing member and the base. The frame-shaped region has a recess and at least a portion of the intermediate layer is located inside the recess.Type: GrantFiled: June 29, 2009Date of Patent: October 8, 2013Assignee: Kyocera CorporationInventors: Daisuke Makibuchi, Kazuhiro Otsuka
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Patent number: 8097178Abstract: A surface acoustic wave device configured by forming an oxide layer 2 on a piezoelectric substrate 1 composed of a lithium tantalate single crystal or a lithium niobate single crystal and having weak pyroelectric properties having a lower oxygen content than a stoichiometric composition ratio, and forming thereon an IDT electrode 3. There is no static destruction of a minute electrode due to the pyroelectric effect of the piezoelectric substrate having weak pyroelectric properties, and frequency characteristics are not degraded.Type: GrantFiled: March 25, 2008Date of Patent: January 17, 2012Assignee: Kyocera CorporationInventors: Ikuo Obara, Daisuke Makibuchi, Kunihiko Muraoka, Kiyohiro Iioka
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Publication number: 20110115339Abstract: An acoustic wave device according to one embodiment of the present invention has a base with a vibrating body, a sealing member which is joined to the base in a frame-shaped region surrounding the vibrating body and faces the vibrating body with a space therebetween, and an intermediate layer between the frame-shaped region of the sealing member and the base. The frame-shaped region has a recess and at least a portion of the intermediate layer is located inside the recess.Type: ApplicationFiled: June 29, 2009Publication date: May 19, 2011Applicant: KYOCERA CORPORATIONInventors: Daisuke Makibuchi, Kazuhiro Otsuka
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Patent number: 7518470Abstract: A surface acoustic wave element 1 comprises a piezoelectric substrate 19, IDT electrodes 3, 4, 5 of an odd number not less than three formed along a propagation direction of surface acoustic waves that propagates on the piezoelectric substrate, wherein IDT electrodes 3, 5 of the odd number of IDT electrodes 3, 4, 5 disposed on both sides of an IDT electrode 4 that is located at the center are connected to first and second reference potential terminals 14, 15, respectively, and the first and second reference potential terminals 14 and 15 are formed asymmetrically with respect to a virtual central axis A that passes through the center of the IDT electrode 4 located at the center and provided in a direction perpendicular to the propagation direction.Type: GrantFiled: November 30, 2006Date of Patent: April 14, 2009Assignee: Kyocera CorporationInventors: Daisuke Makibuchi, Kazuhiro Otsuka, Kiyohiro Iioka
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Patent number: 7504911Abstract: A plurality of IDT electrodes 2 to 7 each having a large number of electrode fingers extending in a direction perpendicular to a propagation direction of a surface acoustic wave propagating on a piezoelectric substrate 1 are arranged on the piezoelectric substrate 1 along the propagation direction, and each of the two adjacent IDT electrodes out of the plurality of IDT electrodes 2 to 7 comprises a variable pitch section and a fixed pitch section. The electrode finger pitch in the variable pitch section gradually decreases toward the boundary between the two adjacent IDT electrodes, and the minimum electrode finger pitch portion in the two variable pitch sections is on one side spaced apart from the boundary. There can be provided a surface acoustic wave apparatus having a large pass bandwidth, having a low insertion loss, and having improved flatness in a pass band.Type: GrantFiled: May 25, 2006Date of Patent: March 17, 2009Assignee: Kyocera CorporationInventors: Kazuhiro Otsuka, Daisuke Makibuchi, Tsuyoshi Nakai, Atsuomi Fukuura, Hiroyuki Tanaka, Ikuo Obara, Kiyohiro Iioka
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Patent number: 7439648Abstract: A surface acoustic wave device configured by forming an oxide layer 2 on a piezoelectric substrate 1 composed of a lithium tantalate single crystal or a lithium niobate single crystal and having weak pyroelectric properties having a lower oxygen content than a stoichiometric composition ratio, and forming thereon an IDT electrode 3. There is no static destruction of a minute electrode due to the pyroelectric effect of the piezoelectric substrate having weak pyroelectric properties, and frequency characteristics are not degraded.Type: GrantFiled: August 26, 2005Date of Patent: October 21, 2008Assignee: Kyocera CorporationInventors: Ikuo Obara, Daisuke Makibuchi, Kunihiko Muraoka, Kiyohiro Iioka
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Publication number: 20080179278Abstract: A surface acoustic wave device configured by forming an oxide layer 2 on a piezoelectric substrate 1 composed of a lithium tantalate single crystal or a lithium niobate single crystal and having weak pyroelectric properties having a lower oxygen content than a stoichiometric composition ratio, and forming thereon an IDT electrode 3. There is no static destruction of a minute electrode due to the pyroelectric effect of the piezoelectric substrate having weak pyroelectric properties, and frequency characteristics are not degraded.Type: ApplicationFiled: March 25, 2008Publication date: July 31, 2008Applicant: KYOCERA CORPORATIONInventors: Ikuo OBARA, Daisuke MAKIBUCHI, Kunihiko MURAOKA, Kiyohiro IIOKA
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Patent number: 7301255Abstract: In a surface acoustic wave element 10, in which IDT electrodes 31 and 32, a grounding electrode 37, etc. are formed one main surface of a piezoelectric substrate 20, resistors 40 made of a semiconductor are provided to connection electrodes 38 that interconnect the respective electrodes. By forcing the charges generated in the IDT electrodes to move via the resistors 40, it is possible to provide a compact, highly reliable surface acoustic wave apparatus capable of preventing an electrostatic discharge damage in the IDT electrodes.Type: GrantFiled: March 26, 2004Date of Patent: November 27, 2007Assignee: Kyocera CorporationInventors: Motoki Ito, Daisuke Makibuchi, Yoshifumi Yamagata, Kouichi Maruta, Yuuko Yokota
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Publication number: 20070120626Abstract: A surface acoustic wave element 1 comprises a piezoelectric substrate 19, IDT electrodes 3, 4, 5 of an odd number not less than three formed along a propagation direction of surface acoustic waves that propagates on the piezoelectric substrate, wherein IDT electrodes 3, 5 of the odd number of IDT electrodes 3, 4, 5 disposed on both sides of an IDT electrode 4 that is located at the center are connected to first and second reference potential terminals 14, 15, respectively, and the first and second reference potential terminals 14 and 15 are formed asymmetrically with respect to a virtual central axis A that passes through the center of the IDT electrode 4 located at the center and provided in a direction perpendicular to the propagation direction.Type: ApplicationFiled: November 30, 2006Publication date: May 31, 2007Applicant: KYOCERA CORPORATIONInventors: Daisuke MAKIBUCHI, Kazuhiro Otsuka, Kiyohiro Iioka
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Publication number: 20070024397Abstract: A plurality of IDT electrodes 2 to 7 each having a large number of electrode fingers extending in a direction perpendicular to a propagation direction of a surface acoustic wave propagating on a piezoelectric substrate 1 are arranged on the piezoelectric substrate 1 along the propagation direction, and each of the two adjacent IDT electrodes out of the plurality of IDT electrodes 2 to 7 comprises a variable pitch section and a fixed pitch section. The electrode finger pitch in the variable pitch section gradually decreases toward the boundary between the two adjacent IDT electrodes, and the minimum electrode finger pitch portion in the two variable pitch sections is on one side spaced apart from the boundary. There can be provided a surface acoustic wave apparatus having a large pass bandwidth, having a low insertion loss, and having improved flatness in a pass band.Type: ApplicationFiled: May 25, 2006Publication date: February 1, 2007Inventors: Kazuhiro Otsuka, Daisuke Makibuchi, Tsuyoshi Nakai, Atsuomi Fukuura, Hiroyuki Tanaka, Ikuo Obara, Kiyohiro Iioka
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Publication number: 20060043823Abstract: A surface acoustic wave device configured by forming an oxide layer 2 on a piezoelectric substrate 1 composed of a lithium tantalate single crystal or a lithium niobate single crystal and having weak pyroelectric properties having a lower oxygen content than a stoichiometric composition ratio, and forming thereon an IDT electrode 3. There is no static destruction of a minute electrode due to the pyroelectric effect of the piezoelectric substrate having weak pyroelectric properties, and frequency characteristics are not degraded.Type: ApplicationFiled: August 26, 2005Publication date: March 2, 2006Inventors: Ikuo Obara, Daisuke Makibuchi, Kunihiko Muraoka, Kiyohiro Iioka
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Publication number: 20040189147Abstract: In a surface acoustic wave element 10, in which IDT electrodes 31 and 32, a grounding electrode 37, etc. are formed one main surface of a piezoelectric substrate 20, resistors 40 made of a semiconductor are provided to connection electrodes 38 that interconnect the respective electrodes. By forcing the charges generated in the IDT electrodes to move via the resistors 40, it is possible to provide a compact, highly reliable surface acoustic wave apparatus capable of preventing an electrostatic discharge damage in the IDT electrodes.Type: ApplicationFiled: March 26, 2004Publication date: September 30, 2004Applicant: KYOCERA CORPORATIONInventors: Motoki Ito, Daisuke Makibuchi, Yoshifumi Yamagata, Kouichi Maruta, Yuuko Yokota