Patents by Inventor Daisuke Manba

Daisuke Manba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resist composition and patterning process
    Patent number: 7618763
    Abstract: A hydroxystyrene/indene/alkoxyisobutoxystyrene copolymer having Mw of 1,000-500,000 is formulated as a base resin to give a resist composition, typically chemically amplified positive resist composition. The composition exhibits a high resolution, a satisfactory resist pattern profile after development, and improved etch resistance and is thus suitable as a micropatterning material for the fabrication of VLSI.
    Type: Grant
    Filed: November 6, 2006
    Date of Patent: November 17, 2009
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takanobu Takeda, Osamu Watanabe, Daisuke Manba, Tsugio Kaneda
  • Resist composition and patterning process
    Patent number: 7267923
    Abstract: Resist compositions comprising as the base resin a polymer having alkoxyisobutoxy as a reactive group which is decomposable under the action of an acid to increase solubility in alkali have advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, a high sensitivity, and a high resolution in fine feature size regions. The compositions are best suited as a chemically amplified resist material for micropatterning in the manufacture of VLSI.
    Type: Grant
    Filed: May 25, 2004
    Date of Patent: September 11, 2007
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takanobu Takeda, Osamu Watanabe, Daisuke Manba
  • RESIST COMPOSITION AND PATTERNING PROCESS
    Publication number: 20070148584
    Abstract: Resist compositions comprising as the base resin a polymer having alkoxyisobutoxy as a reactive group which is decomposable under the action of an acid to increase solubility in alkali have advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, a high sensitivity, and a high resolution in fine feature size regions. The compositions are best suited as a chemically amplified resist material for micropatterning in the manufacture of VLSI.
    Type: Application
    Filed: May 25, 2004
    Publication date: June 28, 2007
    Inventors: Takanobu Takeda, Osamu Watanabe, Daisuke Manba
  • RESIST COMPOSITION AND PATTERNING PROCESS
    Publication number: 20070105042
    Abstract: A hydroxystyrene/indene/alkoxyisobutoxystyrene copolymer having Mw of 1,000-500,000 is formulated as a base resin to give a resist composition, typically chemically amplified positive resist composition. The composition exhibits a high resolution, a satisfactory resist pattern profile after development, and improved etch resistance and is thus suitable as a micropatterning material for the fabrication of VLSI.
    Type: Application
    Filed: November 6, 2006
    Publication date: May 10, 2007
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takanobu TAKEDA, Osamu Watanabe, Daisuke Manba, Tsugio Kaneda