Abstract: The seamless steel pipe according to the present disclosure includes a chemical composition consisting of, in mass %, C: 0.030% or less, Si: 1.00% or less, Mn: 1.00% or less, P: 0.030% or less, S: 0.0050% or less, Al: 0.001 to 0.100%, N: 0.0500% or less, O: 0.050% or less, Ni: 5.00 to 6.50%, Cr: more than 10.00 to 13.40%, Cu: more than 1.50 to 3.50%, Mo: 1.00 to 4.00%, V: 0.01 to 1.00%, Ti: 0.050 to 0.300%, and Co: 0.010 to 0.300%, with the balance being Fe and impurities, and satisfying Formula (1), wherein a depassivation pH of an inner surface is 3.00 or less. Cr+2.0 Mo+0.5 Ni+2.0 Cu+0.5 Co?20.

Abstract: A ceramic member unit includes at least insertion members and a ceramic member having insertion sections into which the insertion members are inserted respectively. Each of the insertion sections has at least an insertion opening which opens on a deeper side of an introduction opening in the surface of the ceramic member while communicating with the introduction opening and into which the insertion member can be inserted. The insertion section further has taper hole portions becoming narrower toward the insertion opening in a communication region between the introduction opening and the insertion opening. The taper hole portions are connected to the insertion opening while increasing in a taper angle toward the insertion opening.

Abstract: The toner contains binder resin-containing toner particles and silica fine particle S1, wherein the weight-average particle diameter of the toner is 4.0-15.0 ?m, both inclusive, peaks originating with the silica fine particle S1 are observed in 29 Si-NMR measurement of the silica fine particle S1, and, in the spectrum obtained by 29Si CP/MAS NMR or 29Si DD/MAS NMR, the peak area of a peak corresponding to the D1 unit structure in the silica fine particle S1, the peak area of a peak corresponding to the D2 unit structure in the silica fine particle S1, and the peak area of a peak corresponding to the Q unit structure in the silica fine particle S1 satisfy a prescribed relationship.

Abstract: The steel material of the present disclosure includes a chemical composition consisting of, in mass %, C: 0.035% or less, Si: 1.00% or less, Mn: 1.00% or less, P: 0.030% or less, S: 0.0050% or less, sol. Al: 0.005 to 0.100%, N: 0.001 to 0.020%, Ni: 5.00 to 7.50%, Cr: 10.00 to 14.00%, Cu: 0.01 to less than 1.50%, Mo: 1.50 to 3.50%, V: 0.01 to 1.00%, Ti: 0.02 to 0.30%, Co: 0.01 to 0.50%, Ca: 0.0003 to 0.0030%, 0: 0.0050% or less, W: 0 to 1.50%, Nb: 0 to 0.50%, B: 0 to 0.0050%, Mg: 0 to 0.0050%, and rare earth metals (REM): 0 to 0.020%, with the balance being Fe and impurities, in which a total number density of Mn sulfide having an equivalent circular diameter of 1.0 ?m or more and Ca sulfide having an equivalent circular diameter of 2.0 ?m or more is 0.50/mm2 or less.

Abstract: The present technology relates to an information processing device, an information processing method, and an information processing system which enable reduction in a capacity of a transmission path required for transmission of sensor data. The information processing device extracts a part of sensor data of a distance measurement sensor to generate extracted data on the basis of a spectrum of a specific component of the sensor data. The present technology can be applied to a vehicle control system that performs processing related to vehicle travel assistance and automated driving.

Abstract: A martensitic stainless steel material according to the present disclosure contains, in mass %, C: 0.030% or less, Ni: 5.05 to 7.50%, Cr: 10.00 to 14.00%, and Mo: 1.50 to 3.50%, and has a yield strength of 758 MPa or more, and on two line segments LS of 1000 ?m extending in a wall thickness direction with arbitrary two points as a center located at positions at a depth of 2 mm from the inner surface, a degree of Cr segregation ?Cr defined by Formula (1) and a degree of Mo segregation ?Mo defined by Formula (2) satisfy Formula (3): ?Cr=([Cr*]max?[Cr*]min)/[Cr*]ave??(1) ?Mo=([Mo*]max?[Mo*]min)/[Mo*]ave??(2) ?Cr+?Mo?0.59??(3).

Abstract: The martensitic stainless steel material has a chemical composition, which contains: in mass %, C: 0.030% or less, Si: 1.00% or less, Mn: 1.00% or less, P: 0.030% or less, S: 0.005% or less, Al: 0.010 to 0.100%, N: 0.0010 to 0.0100%, Ni: 5.00 to 6.50%, Cr: 10.00 to 13.40%, Cu: 1.80 to 3.50%, Mo: 1.00 to 4.00%, V: 0.01 to 1.00%, Ti: 0.050 to 0.300%, Co: 0.300% or less, Ca: 0.0006 to 0.0030%, and O: 0.0050% or less, and satisfies Formulae (1) and (2) in the description. An area of each intermetallic compound and each Cr oxide in the steel material is 5.0 ?m2 or less, a total area fraction of intermetallic compounds and Cr oxides is 3.0% or less, and a maximum circle-equivalent diameter of Ca oxide is 9.5 ?m or less.

Abstract: A martensitic stainless steel material contains, in mass %, C: 0.030% or less, Ni: 5.00 to 7.00%, Cr: 10.00 to 14.00%, and Cu: more than 1.00 to 3.50%. On two line segments LS of 1000 ?m extending in a wall thickness direction with arbitrary two points as a center located at positions at a depth of 2 mm from the inner surface, respectively, a degree of Cr segregation ?Cr defined by Formula (1) described in the description, a degree of Mo segregation ?Mo defined by Formula (2) described in the description, and a degree of Cu segregation ?Cu defined by Formula (3) described in the description satisfy Formula (4): ?Cr+?Mo+?Cu?A??(4) where, when the yield strength is 758 to less than 862 MPa, A in Formula (4) is 0.70, and when the yield strength is 862 MPa or more, A in Formula (4) is 0.50.

Abstract: There is provided an object identification apparatus for identifying a stationary object and a moving object. The object identification apparatus includes a phase difference calculator that calculates phase difference information between a transmission signal and a reception signal obtained by reflecting, by surfaces of the moving object and the stationary object in a space, the transmission signal emitted to the space and receiving the reflected transmission signal, a distance calculator that calculates distance information using the phase difference information, a distance information separator that separates the distance information into moving object distance information as distance information about the moving object and stationary object distance information as distance information about the stationary object, and an identifier that identifies the stationary object and the moving object based on the stationary object distance information and the moving object distance information.

Abstract: The duplex stainless steel seamless pipe according to the present disclosure has the chemical composition described in the description and a microstructure consisting of 30 to 55% of ferrite, and austenite. In a square observation field of view region with sides of 250 ?m including a center portion of the wall thickness and including a T direction and a C direction, a number of intersections NT which is a number of intersections between the line segment T1 to T4 described in the description and ferrite interfaces is 65 or more. A number of intersections NC which is a number of intersections between the line segments C1 to C4 described in the description and ferrite interfaces is 50 or more.

Abstract: The steel material of the present disclosure includes a chemical composition consisting of, in mass %, C: 0.035% or less, Si: 1.00% or less, Mn: 1.00% or less, P: 0.030% or less, S: 0.0050% or less, sol. Al: 0.005 to 0.100%, N: 0.001 to 0.020%, Ni: 5.00 to 7.00%, Cr: 10.00 to 14.00%, Cu: 1.50 to 3.50%, Mo: 1.00 to 4.00%, V: 0.01 to 1.00%, Ti: 0.02 to 0.30%, Co: 0.01 to 0.50%, Ca: 0.0003 to 0.0030%, O: 0.0050% or less, W: 0 to 1.50%, Nb: 0 to 0.50%, B: 0 to 0.0050%, Mg: 0 to 0.0050%, and rare earth metals (REM): 0 to 0.020%, with the balance being Fe and impurities, in which a total number density of Mn sulfide having an equivalent circular diameter of 1.0 ?m or more and Ca sulfide having an equivalent circular diameter of 2.0 ?m or more is 0.50 pieces/mm2 or less.

Abstract: The martensitic stainless steel material according to the present disclosure consists of C: less than 0.030%, Si: 1.00% or less, Mn: 0.05 to 2.00%, Cr: 11.50 to 14.00%, Ni: 5.00 to 7.50%, Mo: 1.10 to 3.50%, Cu: 0.50 to 3.50%, Co: 0.01 to 0.30%, Al: 0.001 to 0.100%, N: 0.001 to 0.100%, and the balance: Fe and impurities. The microstructure is composed of retained austenite in an amount of 0 to 15 vol%, and ferrite in an amount of 0 to 10 vol%, with the balance being martensite. The yield strength is 862 MPa or more, and a number density of Cu precipitates is 3.0 x 1021 to 50.0 x 1021 /m3.

Abstract: According to the present invention, provided is an antenna mechanism 3 that adjusts the impedance of an antenna body through which a high-frequency current flows to generate plasma by means of a simple configuration, and generates plasma P, and comprises: the antenna body 31 through which high-frequency current flows; and one or a plurality of adjustment circuits 32 provided adjacent to the antenna body 31. The adjustment circuit 32 has a metal conductor 321 forming a closed circuit and a capacitor 322 forming the closed circuit.

Abstract: Provided is a method for producing a thin film transistor that has a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode and a drain electrode on a substrate. This method for producing a thin film transistor includes a step for forming the oxide semiconductor layer on the gate insulating layer by performing sputtering on a target with plasma. The step for forming the oxide semiconductor layer includes: a first film formation step in which only argon is supplied as a sputtering gas to perform sputtering; and a second film formation step in which a mixed gas of argon and oxygen is supplied as the sputtering gas to perform sputtering. A bias voltage applied to the target is a negative voltage of ?1 kV or higher.

Abstract: An object sensing apparatus 1 includes: an emission unit 11 configured to emit an RF transmission signal in each period; a reception unit 21 configured to receive a reflected wave of the RF transmission signal as an RF reception signal; an IF signal generation unit 22 configured to generate an IF signal by mixing the RF transmission signal and the RF reception signal; a one-dimensional spectrum generation unit 23 configured to generate a one-dimensional spectrum with respect to distance obtained using the object sensing apparatus as a reference, based on the IF signal, and use the generated one-dimensional spectrum to generate a one-dimensional spectrum with fixed object reflection removed, from which a signal component caused by a reflected wave from a fixed object present in an emission range has been removed; a position detection unit 24 configured to detect a position of an object other than the fixed object based on the amplitude of the one-dimensional spectrum with fixed object reflection removed; and a

Abstract: The purpose of the present invention is to improve uniformity of film deposition by a plasma-based sputtering device. Provided is a sputtering device 100 for depositing a film on a substrate W through sputtering of targets T by using plasma P, said sputtering device being provided with a vacuum chamber 2 which can be evacuated to a vacuum and into which a gas is to be introduced; a substrate holding part 3 for holding the substrate W inside the vacuum chamber 2; target holding parts 4 for holding the targets T inside the vacuum chamber 2; multiple antennas 5 which are arranged along a surface of the substrate W held by the substrate holding part 3 and generate plasma P; and a reciprocal scanning mechanism 14 for scanning back and forth the substrate holding part 3 along the arrangement direction X of the multiple antennas 5.

Abstract: An object sensing apparatus 1 includes: an emission unit 11 configured to emit an RF transmission signal as an electromagnetic wave for object sensing; a reception unit 21 configured to receive a reflected wave of the RF transmission signal as an RF reception signal, and use the RF transmission signal to generate a demodulated signal based on the RF reception signal; a distance detection unit 22 configured to detect a distance to the object that reflected the RF transmission signal based on the range spectrum calculated based on the demodulated signal; a behavior detection unit 23 configured to detect behavior of the object based on the range spectrum; a fixed object specifying unit 24 configured to specify a fixed object from among detected objects based on the distance and behavior; and a virtual image specifying unit 25 configured to, if there are two or more objects other than the fixed object among the detected objects, calculate a degree of similarity in the change over time in the behavior for each com

Abstract: The purpose of the present invention is to improve uniformity of film deposition by a plasma-based sputtering device. Provided is a sputtering device 100 for depositing a film on a substrate W through sputtering of targets T by using plasma P, said sputtering device being provided with a vacuum chamber 2 which can be evacuated to a vacuum and into which a gas is to be introduced; a substrate holding part 3 for holding the substrate W inside the vacuum chamber 2; target holding parts 4 for holding the targets T inside the vacuum chamber 2; multiple antennas 5 which are arranged along a surface of the substrate W held by the substrate holding part 3 and generate plasma P; and a reciprocal scanning mechanism 14 for scanning back and forth the substrate holding part 3 along the arrangement direction X of the multiple antennas 5.

Abstract: The apparatus includes: a vacuum container; a substrate-holding part inside the vacuum container; a target-holding part inside the vacuum container; and a plurality of antennas having a flow channel through which a cooling liquid flows. The antennas include: at least two tubular conductor elements; a tubular insulating element that is arranged between mutually adjacent conductor elements and insulates the conductor elements; and a capacitive element that is connected electrically in series to the mutually adjacent conductor elements. The capacitive element includes: a first electrode which is connected electrically to one of the mutually adjacent conductor elements; a second electrode which is connected electrically to the other of the mutually adjacent conductor elements and is disposed facing the first electrode; and a dielectric substance that fills the space between the first electrode and the second electrode. The dielectric substance is a cooling liquid.

Abstract: The seamless steel pipe according to the present disclosure includes a chemical composition consisting of, in mass %, C: 0.030% or less, Si: 1.00% or less, Mn: 1.00% or less, P: 0.030% or less, S: 0.0050% or less, Al: 0.001 to 0.100%, N: 0.0500% or less, O: 0.050% or less, Ni: 5.00 to 6.50%, Cr: more than 10.00 to 13.40%, Cu: more than 1.50 to 3.50%, Mo: 1.00 to 4.00%, V: 0.01 to 1.00%, Ti: 0.050 to 0.300%, and Co: 0.010 to 0.300%, with the balance being Fe and impurities, and satisfying Formula (1), wherein a depassivation pH of an inner surface is 3.00 or less. Cr+2.0Mo+0.5Ni+2.0Cu+0.5Co?20.