Abstract: A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided.

Abstract: The invention provides a laminated body (1) having a good workability during the production and an excellent peeling resistance, which is formed by joining a resin film layer (D) (2) comprising at least a layer composed of a resin composition (C) in which a soft resin (B) having a Young's modulus at 23° C. lower than that of a thermoplastic resin (A) is dispersed in a matrix made from the thermoplastic resin (A) and a rubbery elastomer layer (E) (3) through an adhesive layer (F) (4), wherein an adhesive composition (I) formed by compounding not less than 0.1 part by mass of at least one of a maleimide derivative (H) having not less than two reaction sites in a molecule thereof and poly-p-dinitrosobenzene based on 100 parts by mass of a rubber component (G) is applied to the adhesive layer (F) (4).

Abstract: A pneumatic tire in which the average peel strength between the surface of (A) a layer of a single-layered or multi-layered film of a thermoplastic resin and (B) a rubbery elastic layer, which are used as the inner liner layer, is 6 kN/m or greater at ?20° C., i.e., a pneumatic tire exhibiting excellent average peel strength between the surface of layer (A) and layer (B), which are used in combination as the inner liner layer exhibiting excellent gas barrier property and flexibility, at a low temperature and at the room temperature, is provided.

Abstract: A nitride semiconductor laser device has a group III nitride semiconductor multilayer structure. The group III nitride semiconductor multilayer structure includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer, and the p-type semiconductor layer is formed by successively stacking a p-side guide layer, a p-type electron blocking layer in contact with the p-side guide layer and a p-type cladding layer in contact with the p-type electron blocking layer from the side closer to the light emitting layer. The p-side guide layer is formed by stacking a layer made of a group III nitride semiconductor containing Al and a layer made of a group III nitride semiconductor containing no Al.

Abstract: An innerliner for tire is formed by laminating a composition containing an elastomer component onto a resin layer and then irradiating energy beams required for generating partial crosslinking between the resin layer and the elastomer component.

Abstract: The semiconductor device according to the present invention includes a semiconductor layer containing plural band gap change thin films in which a band gap is continuously monotonously changed in a laminating direction. Therefore, the present invention provides a semiconductor device having high reliability and low electric resistance.

Abstract: A semiconductor lamination portion (6) is formed by laminating at least an n-type layer (3) and a p-type layer (5) made of gallium nitride based compound semiconductor so as to form a light emitting portion, and a light transmitting conductive layer (7) is formed on a surface of the semiconductor lamination portion. An upper electrode (8) is formed so as to adhere to an exposed surface of the semiconductor lamination portion exposed by etching a part of the light transmitting conductive layer, and to the light transmitting conductive layer. An electric current blocking means (10) is formed on the exposed surface of the semiconductor lamination portion which is exposed through an opening (7a) of the light transmitting conductive layer, thereby significantly preventing electric current from flowing into a part under the upper electrode while ensuring good adhesion between the upper electrode and the surface of the semiconductor lamination portion.

Abstract: A method of manufacturing a semiconductor light emitting apparatus according to the invention includes: the mask layer forming step of forming two mask layers in descending order of etching rates from a side near a p-type semiconductor layer; the mask layer etching step; the semiconductor layer etching step; the side etching step of selectively etching a side surface of a mask layer having a high etching rate to form a groove portion in the p-type semiconductor layer; the insulating film forming step of forming an insulating film so as to cover the p-type semiconductor layer; the mask layer removing step; and the electrode layer forming step. A semiconductor light emitting apparatus according to the invention includes: a substrate; an n-type semiconductor layer; an active layer; a p-type semiconductor layer on which a mesa portion projecting above the active layer is formed; an insulating film which covers the mesa portion to expose an upper surface of the mesa portion; and an electrode layer.

Abstract: The semiconductor device according to the present invention includes a semiconductor layer containing plural band gap change thin films in which a band gap is continuously monotonously changed in a laminating direction. Therefore, the present invention provides a semiconductor device having high reliability and low electric resistance.

Abstract: A vehicle body frame structure for a two-wheeler provides a sufficient distance between exhaust pipes and a front wheel, to facilitate the arrangement of a heat-discharging member such as a radiator or an oil cooler, or other auxiliary components, to increase heat-discharging property by increasing the capacity of the heat-discharging member, and improving flexibility in design such as the shape or the layout of the vehicle body frame and the exhaust pipes. In a two-wheel vehicle having an engine mounted to a vehicle body frame, the engine having exhaust pipes extending forwardly and downwardly and a pair of left and right down tubes extending substantially downwardly from a head pipe provided at the front end of the vehicle body frame, the vehicle body frame includes a first cross member for connecting the left and right down tubes, and the first cross member is formed with arcuate recesses for allowing part of the exhaust pipes to pass therethrough.

Abstract: In a gallium nitride compound semiconductor, making small the thickness of a metal electrode layer in order to enhance the efficiency of taking light out relatively increases the resistance value of the metal electrode layer as measured in a direction that is parallel with this layer compared to that of it in a direction that is vertical with respect thereto. As a result of this, when a voltage has been applied across relevant electrodes, electric current ceases to be sufficiently supplied to the entire metal electrode layer. The semiconductor light emitting device of the invention is equipped, between the metal electrode layer and an active layer, with a superlattice layer for enhancing the efficiency of taking out the light that has been emitted in the active layer.

Abstract: A vehicle body frame structure for a two-wheeler provides a sufficient distance between exhaust pipes and a front wheel, to facilitate the arrangement of a heat-discharging member such as a radiator or an oil cooler, or other auxiliary components, to increase heat-discharging property by increasing the capacity of the heat-discharging member, and improving flexibility in design such as the shape or the layout of the vehicle body frame and the exhaust pipes. In a two-wheel vehicle having an engine mounted to a vehicle body frame, the engine having exhaust pipes extending forwardly and downwardly and a pair of left and right down tubes extending substantially downwardly from a head pipe provided at the front end of the vehicle body frame, the vehicle body frame includes a first cross member for connecting the left and right down tubes, and the first cross member is formed with arcuate recesses for allowing part of the exhaust pipes to pass therethrough.

Abstract: Polynuclear dicarboxylatotetrachromium (III) complexes are produced by reacting a dicarboxylic acid with a monobasic chromic (III) salt in a proportion of 4 moles of monobasic chromic (III) salt to 1 mole of dicarboxylic acid. Surface treating agents comprising these complexes provide a surface with desirable properties such as durable water repellency, adhesiveness, antistatic properties, etc.