Abstract: Provided is an additive which exhibits a maximum absorption wavelength of 280-310 nm to efficiently absorb a UV-B region (280 to 320 nm), is suppressed in coloration during heating, has a high decomposition onset temperature during heating, and thus has excellent heat resistance. The additive according to the present invention is represented by the following general formula (1): wherein, in the formula, R1 and R2 each independently represent an alkoxy group having 1 to 10 carbon atoms, or are bonded to a divalent group to form a ring, and R3 to R7 independently represent at least one selected from a hydrogen atom, a hydrocarbon group having 1 to 10 carbon atoms, a sulfur-containing group, a nitrogen-containing group, and a halogen, or any two among R3 to R7 are bonded to a divalent group to form a ring.

Abstract: A siphon jet-type flush toilet apparatus includes a bowl, a drain trap conduit, a jet water spout port, a pressure pump, a line sensor that detects an object fallen into the bowl, and a control unit that determines whether the object is solid waste or floating waste. The control unit controls the pressure pump such that first jet water ejection is performed through the jet water spout port at a first flow rate for inducing siphonage and such that second jet water ejection is subsequently performed through the jet water spout port at a second flow rate lower than the first flow rate. The control unit controls the pressure pump such that the duration of the first jet water ejection is shorter when the object is determined to be floating waste than when the object is determined to be solid waste.

Abstract: A flush toilet is a siphon jet flush toilet that includes a bowl, a discharge trap conduit that includes an ascending conduit extending upward, a jet spout port configured to spout flush water toward an inlet of the discharge trap conduit, and a jet water conduit configured to guide flush water to the jet spout port, in which in a flow channel cross-section of the ascending conduit of the discharge trap conduit, a narrowed portion that narrows a flow channel in which the flush water flows is provided in an upper-side flow channel located above a center line of the discharge trap conduit in an up-down direction, and a flow channel cross-sectional area of the upper-side flow channel is smaller than a flow channel cross-sectional area of a lower-side flow channel located below the center line.

Abstract: A piezoelectric device that exhibits good piezoelectric characteristics, while reducing generation of leakage current paths, and a method of manufacturing the same, are provided. The piezoelectric device has a multilayer stack in which a first electrode, a piezoelectric layer, and a second electrode are stacked in this order on a substrate, wherein at least the first electrode is formed of an amorphous oxide conductor.

Abstract: A piezoelectric element according to the present invention includes: a first electrode, a piezoelectric layer, and a second electrode laminated in this order on a support substrate; and an oxide layer provided on a machined surface formed on at least a part of a surface of the piezoelectric layer different from surfaces of the piezoelectric layer facing the first electrode and the second electrode, the oxide layer being configured to supply oxygen to the piezoelectric layer.

Abstract: A heat-resistant member comprises: a substrate made of isotropic graphite; a single-layered dense low-emissivity layer covering part of surfaces of the substrate; and a single-layered or multi-layered dense high-emissivity layer covering all or part of the remaining surfaces of the substrate. The dense low-emissivity layer has an outermost surface with an emissivity of ?A, and has a relative density of 97% or more. The dense high-emissivity layer has an outermost surface with an emissivity of ?B (>?A), and has a high-density region with a relative density of 97% or more in any portion between the outermost surface and the interface with the substrate. Preferably, an emissivity difference (?B??A) is 0.1 or more.

Abstract: A multilayer structure and a piezoelectric device using the same, which have satisfactory crystal orientation even in the submicron region of the thickness of a piezoelectric layer, are provided. The multilayer structure includes a first wurtzite thin film, a first hexagonal metal layer, a first electrode layer, a second hexagonal metal layer, and a second wurtzite thin film stacked in this order. The first electrode layer is formed of a metallic material having an acoustic impedance higher than that of the second wurtzite thin film.

Abstract: Because an electronic apparatus includes: an input means; and a display means for, when a first product registered in a first classification is newly registered in a second classification on the basis of an operational instruction via the input means from a user, displaying a first image in which information about the first product is included, and a second image in which information about the first product is added, and for, when a second product registered in the second classification is newly registered in a third classification, displaying the second image in which information about the second product is deleted, and a third image in which information about the second product is added, the electronic apparatus provides a purchase management function of properly displaying a state of each product and making it easy for the user to perform management in accordance with the classifications.

Abstract: A piezoelectric element according to the present invention includes: a first electrode, a piezoelectric layer containing a piezoelectric material doped with Mg, and a second electrode, which are laminated in this order on a support substrate; and an Mg deficiency preventing layer configured to reduce an outflow of Mg from the piezoelectric layer, the Mg deficiency preventing layer being provided at at least one of a location between the first electrode and the piezoelectric layer, and a location between the piezoelectric layer and the second electrode.

Abstract: A read assist circuit is configured so as to be capable of switching validation/invalidation, and lowers a word line voltage applied to a word line in order to secure a static noise margin of a memory cell when being valid. An SNM detection circuit has a replica memory cell configured so as to make data retention ability lower than that of memory cell. The SNM detection circuit detects the static noise margin of the memory cell in a pseudo manner by using the replica memory and cell, switches the validation/invalidation of the read assist circuit depending on a detection result.

Abstract: The present invention provides a method for producing a three-dimensional object and an ink set for producing a three-dimensional object which can even produce, for example, a complex-shaped three-dimensional object made of a soft material with good fabrication accuracy.

Abstract: An information processing system includes: an operation acquiring unit to acquire operation information based on user's operation; a display generating unit to generate display information indicating a display image in which article images corresponding to respective articles owned by a user are arranged; a display output unit that outputs the display information; an article specifying unit to specify a selected article, corresponding to each of one or more selected article images selected by the user's operation from among the plurality of article images included in the display image indicated by the display information generated by the display generating unit on the basis of the operation information; a request generating unit to generate, on the basis of the operation information, request information for requesting execution of predetermined processing on the one or more selected articles; and a request output unit to output the request information.

Abstract: A current sensor is provided in which each of first, second and third magnetic detection elements are arranged such that each of sensitivity axes of the magnetic detection elements is orthogonal to a first magnetic field that is generated around a first busbar when a current flows in the first busbar. Where current values of currents flowing in the first busbar is I1, flowing in the second busbar is I2, flowing in the third busbar is I3, and output values of the first, second and third magnetic detection elements are V1, V2, and V3, respectively, and an output component caused by a uniform external magnetic field is Bex, the processing circuit calculates at least one of I1, I2, and I3 that satisfy corresponding relationships: I2?(d?f)V1+(f?b)V2+(b?d)V3, I3?(c?e)V1+(e?a)V2+(a?c)V3, and I1=?(I2+I3), from linear equations with three unknowns: V1=aI2+bI3+Bex, V2=cI2+dI3+Bex, and V3=eI2+fI3+Bex.

Abstract: An output value of a magnetic sensor when an intensity of a signal magnetic field is zero is displaced from zero due to a difference between a magnetization state of magnetized fixed layers of magnetoresistance effect stacks in each of a first magnetoresistance effect element and a fourth magnetoresistance effect element and a magnetization state of magnetized fixed layers of magnetoresistance effect stacks in each of a second magnetoresistance effect element and a third magnetoresistance effect element.

Abstract: The occurrence of cracking in a functional layer is suppressed, while maintaining flexibility of a layered structure. The layered structure includes a polymer substrate, and a crystalline functional layer formed on the first surface of the substrate. The surface roughness of the first surface of the substrate is 3 nm or less in terms of arithmetic mean roughness (Ra).

Abstract: A piezoelectric device having a high conversion efficiency between electrical energy and mechanical energy is provided. The piezoelectric device has first electrode, a second electrode, and a piezoelectric layer provided between the first electrode and the second electrode, wherein the piezoelectric layer is formed of a ZnO-based material having a wurtzite crystal structure to which a metal that does not cause the piezoelectric layer to exhibit conductivity is added, and wherein a squared value of a electromechanical coupling coefficient in thickness vibration mode is 6.5% or more.

Abstract: A product selecting unit extracts a candidate for recommended product on the basis of browsing information in a browsing information storing unit and unpurchased product information in an unpurchased product information storing unit. Product specifications that are information specific to each product are stored in a product information storing unit. A specification correlation calculating unit extracts a product having a product specification correlated with a product specification of the candidate for recommended product on the basis of the product specifications, and extracts the product as a recommended product.

Abstract: A stress-relaxed acoustic multilayer film, and a high frequency filter device using such a stress-relaxed acoustic multilayer film are provided. The acoustic multilayer film includes two or more pairs of a first layer and a second layer, the first layer having a first specific acoustic impedance, the second layer having a specific acoustic impedance lower than the first specific acoustic impedance, and the first layer and the second layer being alternately laminated on a support substrate, wherein at least one of the first layers of the acoustic multilayer film is divided in a laminated direction by a dividing layer.

Abstract: Bulk acoustic wave filter device having good heat dissipation property is provided. Bulk acoustic wave filter device includes: acoustic multilayer film on support substrate, first layer having predetermined specific acoustic impedance and second layer having specific acoustic impedance lower than that of first layer being alternately laminated in acoustic multilayer film; and active element provided on a side of acoustic multilayer film opposite to support substrate. Active element includes first electrode layer provided over acoustic multilayer film, piezoelectric layer provided on first electrode layer, and second electrode layer provided on piezoelectric layer. Part or whole of acoustic multilayer film has electrical conductivity. Insulating layer is provided between acoustic multilayer film and first electrode layer. In a preferred configuration example, second layer having electrical conductivity has electrical resistivity of 1.0×10{circumflex over (?)}?3 ?cm or lower.

Abstract: A piezo electric device having a configuration that can suppress the formation of a leakage path between electrodes that sandwich a piezoelectric layer and also reduce deterioration in the piezoelectric characteristics, is provided. The piezoelectric device has a first electrode, a piezoelectric layer, and a second electrode stacked in this order on a substrate. The first electrode and the second electrode are arranged so as not to overlap each other in the stacking direction.