Abstract: A substrate processing method includes: providing a substrate including a first region and a second region into a chamber; forming a deposit film on the first region and the second region of the substrate by generating a first plasma from a first processing gas, and selectively etching the first region with respect to the second region by generating a second plasma from the second processing gas containing an inert gas. The first processing gas is a mixed gas including a first gas containing carbon atoms and fluorine atoms and a second gas containing silicon atoms.

Abstract: Provided is a technology capable of improving the impregnation efficiency of an electrolyte into an electrode body. In accordance with a preferable one embodiment of a method for manufacturing a secondary battery herein disclosed, a method for manufacturing a secondary battery including an electrode body, an electrolyte, and a battery case is provided. The manufacturing method includes a solution introducing step of introducing the electrolyte into the battery case, and a pressure reducing step of reducing the pressure in the battery case after the solution introducing step. After an elapse of 10 hours or more after the solution introducing step, the pressure reducing step is carried out.

Abstract: An ECU is configured to execute SOC estimation control for estimating an SOC of a battery. The ECU obtains “first voltage” indicating an OCV of the battery in the SOC estimation control. The ECU controls an engine and a PCU such that the battery is charged with an amount of electric power equal to or larger than a prescribed amount, when the first voltage is within a voltage range where hysteresis occurs. The ECU obtains “second voltage” indicating an OCV of the charged battery, and estimates the SOC of the battery from the second voltage.

Abstract: Component A: a carboxymethyl cellulose having a degree of carboxymethyl substitution per anhydroglucose unit of 0.45 or more or a salt thereof and Component B: a saturated carboxylic acid having 6 or less carbon atoms or a salt thereof are contained.

Abstract: W1/T1 is equal to or greater than 5, assuming that the width of an electrode body in a direction perpendicular to a winding axis direction and a thickness direction of the electrode body is W1 (mm) and the thickness of the electrode body 3 is T1 (mm).

Abstract: A technique for suppressing formation of a black region in a wound electrode body is provided. A method for fabricating a nonaqueous electrolyte secondary battery disclosed here includes: an assembly step of constructing a secondary battery assembly including a wound electrode body; and an initial charging step of performing initial charging on the secondary battery assembly. In the initial charging step, the secondary battery assembly is charged at a first charging rate until a negative electrode potential with respect to a lithium metal reference (vs. Li/Li+) of the secondary battery assembly reaches at least 0.5 V, and a remaining gas amount of the wound electrode body at the end of the initial charging step is 58 cc or less.

Abstract: A binder for non-aqueous electrolyte secondary batteries, the binder containing a carboxymethyl cellulose and/or a salt thereof, wherein the carboxymethyl cellulose and/or a salt thereof satisfies the conditions (A) and (B) described below. Condition (A): The degree of carboxymethyl substitution per glucose unit is from 0.5 to 1.5. Condition (B): The viscosity ratio of the viscosity Vb (30 rpm, 23° C.) of an aqueous dispersion thereof having a solid content of 3% (w/v) to the viscosity Va (30 rpm, 23° C.) of an aqueous dispersion thereof having a solid content of 2% (w/v), namely Vr1=Vb/Va satisfies Vr1>3.

Abstract: A substrate processing method includes a providing step, a forming step, and an etching step. In the providing step, a substrate including an etching target film, a first mask formed on the etching target film, and a second mask formed to cover at least a part of the first mask is provided. In the forming step, a protective film is formed on a side wall of the second mask by plasma generated from a first gas. In the etching step, the etching target film is etched with plasma generated from a second gas.

Abstract: Provided is a technique for preventing plastic deformation of a battery case due to restraint during initial charging. A manufacturing method disclosed herein is a manufacturing method of a non-aqueous electrolyte solution secondary battery. This method includes assembling to construct a secondary battery assembly, and initial charging of the secondary battery assembly. In the initial charging, the initial charging is started with the secondary battery assembly restrained or not restrained; when a negative electrode potential of the secondary battery assembly reaches 0.6 V, a restraint force P1 is applied to the secondary battery assembly, wherein the restraint force P1 is greater than a restraint force applied before the negative electrode potential reaches 0.6 V; and the restraint force P1 is applied to the secondary battery assembly until the negative electrode potential reaches at least 0.3 V.

Abstract: According to the present disclosure, a secondary battery capable of inhibiting precipitation of metallic lithium is provided. A secondary battery disclosed herein includes a wound electrode body, and a battery case. An insufficiently stacked region is formed in the vicinity of a positive electrode starting end portion in a flat portion of the electrode body. In the insufficiently stacked region, the total number of layers of a positive electrode plate and a negative electrode plate is smaller than in other regions in the flat portion. In addition, in the secondary battery, a protruding portion protruding toward at least a part of the insufficiently stacked region is formed on an inner surface of the battery case. As a result, it is possible to prevent pressing failure in the insufficiently stacked region and inhibit precipitation of metal Li due to a local increase in an inter-electrode distance.

Abstract: An etching method includes: providing a substrate having a film and a patterned mask on the film; forming a silicon-containing layer including silicon, carbon, and nitrogen on the substrate using a precursor gas containing silicon; and performing a plasma etching on the film. The substrate is placed under a depressurized environment for a time period from a start time point of the step of forming the silicon-containing layer on the substrate to an end time point of the step of performing the plasma etching on the film.

Abstract: An etching method includes: providing a substrate having a film and a patterned mask on the film; forming a silicon-containing layer including silicon, carbon, and nitrogen on the substrate using a precursor gas containing silicon; and performing a plasma etching on the film. The substrate is placed under a depressurized environment for a time period from a start time point of the step of forming the silicon-containing layer on the substrate to an end time point of the step of performing the plasma etching on the film.

Abstract: A substrate processing method includes a providing step, a forming step, and an etching step. In the providing step, a substrate including an etching target film, a first mask formed on the etching target film, and a second mask formed to cover at least a part of the first mask is provided. In the forming step, a protective film is formed on a side wall of the second mask by plasma generated from a first gas. In the etching step, the etching target film is etched with plasma generated from a second gas.

Abstract: A substrate processing method includes: providing a substrate including a first region and a second region into a chamber; forming a deposit film on the first region and the second region of the substrate by generating a first plasma from a first processing gas, and selectively etching the first region with respect to the second region by generating a second plasma from the second processing gas containing an inert gas. The first processing gas is a mixed gas including a first gas containing carbon atoms and fluorine atoms and a second gas containing silicon atoms.

Abstract: An etching method includes: providing a substrate having a film and a patterned mask on the film; forming a silicon-containing layer including silicon, carbon, and nitrogen on the substrate using a precursor gas containing silicon; and performing a plasma etching on the film. The substrate is placed under a depressurized environment for a time period from a start time point of the step of forming the silicon-containing layer on the substrate to an end time point of the step of performing the plasma etching on the film.

Abstract: A plasma electrode is provided with an electrode plate, a ground plate, and an insulating plate arranged between the electrode plate and the ground plate. Protrusions of the electrode plate are arranged inside through holes of the ground plate and inside through holes of the insulating plate. One of the through hole provided on the center axes of the protrusions and the through hole provided around the through hole discharges a first processing gas to below the ground plate. The other of the through holes exhausts a gas existing below the ground plate. A second flow path around the protrusions supplies a second processing gas supplied via a first flow path to a gap between outer walls of the protrusions and inner walls of the through holes. The second processing gas supplied to the gap is converted into plasma by high frequency power applied to the electrode plate.

Abstract: An ECU is configured to execute SOC estimation control for estimating an SOC of a battery. The ECU obtains “first voltage” indicating an OCV of the battery in the SOC estimation control. The ECU controls an engine and a PCU such that the battery is charged with an amount of electric power equal to or larger than a prescribed amount, when the first voltage is within a voltage range where hysteresis occurs. The ECU obtains “second voltage” indicating an OCV of the charged battery, and estimates the SOC of the battery from the second voltage.

Abstract: A nonaqueous electrolyte secondary battery includes a positive electrode including a positive electrode mix layer, a negative electrode, and a nonaqueous electrolyte. The positive electrode mix layer contains a lithium transition metal oxide containing zirconium (Zr) and also contains a phosphate compound. The nonaqueous electrolyte contains a linear carboxylate. According to this configuration, the nonaqueous electrolyte secondary battery, which has excellent low-temperature output characteristics, can be provided. Thus, the nonaqueous electrolyte secondary battery is, for example, a power supply for driving a mobile data terminal such as a mobile phone, a notebook personal computer, a smartphone, or a tablet terminal and is particularly suitable for applications needing high energy density. Furthermore, the nonaqueous electrolyte secondary battery is conceivably used for high-output applications such as electric vehicles (EVs), hybrid electric vehicles (HEVs), and electric tools.

Abstract: A carbon nanotube producing method, which is capable of realizing a low resistant depth-wise wiring. An acetylene gas is first supplied as a carbon-containing gas and subsequently, an ethylene gas is supplied as the carbon-containing gas such that carbon nanotubes are produced.

Abstract: It is an object of the present invention to improve the low-temperature output characteristics of a nonaqueous electrolyte secondary battery. A nonaqueous electrolyte secondary battery according to an embodiment includes an electrode assembly having a structure in which a positive electrode and a negative electrode are stacked with a porous separator provided therebetween. The positive electrode contains tungsten and a phosphate compound. The separator contains a material having higher oxidation resistance than a polyethylene and has a pore distribution peak sharpness index of 40 or more in the range of 0.01 ?m to 10 ?m as calculated using formula 1: formula 1: pore distribution peak sharpness index=(peak value of Log differential pore volume)/(difference between maximum pore size and minimum pore size at position corresponding to ½ peak value of Log differential pore volume).