Abstract: The present disclosure provides a block copolymer composition for a flexographic plate comprising a block copolymer A represented by the following general formula (A) and a block copolymer B represented by the following general formula (B), wherein: a content of aromatic vinyl monomer units relative to all monomer units constituting polymer components of the block copolymer composition for the flexographic plate is 18% to 70% by mass; a type A hardness is 25 to 65; and an anisotropic index is 2.0 or less.

Abstract: A moving mechanism and a spray mechanism are controlled to spray a reagent from a nozzle to a sample plate while relatively moving the sample plate and the nozzle. The reagent is applied to an entire application area by moving a spray spot of the reagent sprayed from the nozzle, on the sample plate from a start point to an end point. At this time, the spray spot is moved in a sample placement area after a spray amount of the reagent from the nozzle and a moving speed of the spray spot become constant.

Abstract: Provided is a motion sickness reduction system capable of providing a proper treatment tailored to a motion sickness state of each of two or more users. One aspect of the present disclosure is a motion sickness reduction system including a sensor that senses on-board states of the users aboard a vehicle, two or more communication terminals each assigned to the corresponding user, and an information processor that communicates with the communication terminals. The communication terminals each store motion sickness susceptibility data of the corresponding user to whom each communication terminal is assigned. The information processor performs a sickness level estimation process of estimating a sickness level of each user using the motion sickness susceptibility data and the corresponding on-board state sensed by the sensor, and a reduction treatment process of setting, for each user, a sickness reduction treatment based on the sickness level estimated.

Abstract: The present invention is aiming at providing a communication apparatus that is lower in power consumption and that can detect a change in surrounding environment and send out information indicating the detection result, and a method to detect a change in surrounding environment. A communication apparatus of the present invention includes: a member containing a functional dye material that changes an optical property thereof in accordance with a change in surrounding environment and that maintains a post-change optical property; an optical sensor having a light-receiving portion and disposed such that the light-receiving portion receives light that has passed through the member, the optical sensor detecting a luminance of light that is received by the light-receiving portion; and a communication control unit that transmits information indicating the luminance detected by the optical sensor.

Abstract: An IC tag in which precision reduction is suppressed and which is compact and manufactured easily, and a manufacturing method of IC tag are provided. The IC tag has: antennas disposed on one surface of a substrate; a capacitor which includes a dielectric and first and second electrodes disposed on one surface of the substrate, and in which an electrostatic capacitance changes irreversibly corresponding to changes in ambient environment; and an IC chip which detects the electrostatic capacitance of the capacitor via a pair of external terminals to which the first and second electrodes are respectively connected, and wirelessly transmits information based on a detection result via the antennas.

Abstract: A moving mechanism and a spray mechanism are controlled to spray a reagent from a nozzle to a sample plate while relatively moving the sample plate and the nozzle. The reagent is applied to an entire application area by moving a spray spot of the reagent sprayed from the nozzle, on the sample plate from a start point to an end point. At this time, the spray spot is moved in a sample placement area after a spray amount of the reagent from the nozzle and a moving speed of the spray spot become constant.

Abstract: An IC tag in which precision reduction is suppressed and which is compact and manufactured easily, and a manufacturing method of IC tag are provided. The IC tag has: antennas disposed on one surface of a substrate; a capacitor which includes a dielectric and first and second electrodes disposed on one surface of the substrate, and in which an electrostatic capacitance changes irreversibly corresponding to changes in ambient environment; and an IC chip which detects the electrostatic capacitance of the capacitor via a pair of external terminals to which the first and second electrodes are respectively connected, and wirelessly transmits information based on a detection result via the antennas.

Abstract: The present invention is aiming at providing a communication apparatus that is lower in power consumption and that can detect a change in surrounding environment and send out information indicating the detection result, and a method to detect a change in surrounding environment. A communication apparatus of the present invention includes: a member containing a functional dye material that changes an optical property thereof in accordance with a change in surrounding environment and that maintains a post-change optical property; an optical sensor having a light-receiving portion and disposed such that the light-receiving portion receives light that has passed through the member, the optical sensor detecting a luminance of light that is received by the light-receiving portion; and a communication control unit that transmits information indicating the luminance detected by the optical sensor.

Abstract: A detection device includes a first antenna configured to receive a first radio wave transmitted from an external device, a second antenna configured to receive the first radio wave transmitted from the external device, and transmit a second radio wave to the external device; and a chip configured to obtain a comparison result between a first electromotive force generated by the first radio wave received by the first antenna and a second electromotive force generated by the first radio wave received by the second antenna, and to send the comparison result to the external device through the second radio waive. When the first antenna is disposed closer than the second antenna to a place where the existence of moisture is to be detected, a change of the first electromotive force is greater than a change of the second electromotive force in response to the existence of moisture.

Abstract: A detection device includes a first antenna configured to receive a first radio wave transmitted from an external device, a second antenna configured to receive the first radio wave transmitted from the external device, and transmit a second radio wave to the external device; and a chip configured to obtain a comparison result between a first electromotive force generated by the first radio wave received by the first antenna and a second electromotive force generated by the first radio wave received by the second antenna, and to send the comparison result to the external device through the second radio waive. When the first antenna is disposed closer than the second antenna to a place where the existence of moisture is to be detected, a change of the first electromotive force is greater than a change of the second electromotive force in response to the existence of moisture.

Abstract: A nonvolatile memory includes a memory cell array having multiple memory cells, a read-out circuit outputting data stored in the memory cell array asynchronously in response to an input address signal, a selection circuit outputting a selection signal for selecting a location of the memory cell to fail, an error making circuit receiving a test mode signal, making the data outputted from the read-out circuit fail so that the failed data have an error, and outputting the failed data in response to the selection signal when the test mode signal is activated, and outputting the data outputted from the read-out circuit when the test mode signal is not activated, a data latch circuit latching either the failed data or the data outputted from the read-out circuit and outputting the latched data, and an error correcting circuit detecting the error in the latched data, correcting the error, and outputting the corrected signal.

Abstract: A semiconductor memory device configured such that the time required for its access test can be reduced comprising a memory cell array, a row decoder, a column decoder, an error correction circuit, and an output circuit. The error correction circuit performs error correction on a code word read through the bit lines selected by the column decoder from ones of memory cells located at places at which the word line selected by the row decoder and the selected bit lines cross over, thereby detecting an error position in the code word to generate error detection data indicating the error position and corrects the information bit in the detected error position to generate error corrected data. The output circuit relays to the outside the error corrected data when a normal operation mode has been designated and the error detection data when a test operation mode has been designated.

Abstract: A semiconductor memory device configured such that the time required for its access test can be reduced comprising a memory cell array, a row decoder, a column decoder, an error correction circuit, and an output circuit. The error correction circuit performs error correction on a code word read through the bit lines selected by the column decoder from ones of memory cells located at places at which the word line selected by the row decoder and the selected bit lines cross over, thereby detecting an error position in the code word to generate error detection data indicating the error position and corrects the information bit in the detected error position to generate error corrected data. The output circuit relays to the outside the error corrected data when a normal operation mode has been designated and the error detection data when a test operation mode has been designated.

Abstract: The present invention provides a data reading method suitable for use in a semiconductor memory device equipped with a plurality of semiconductor memory chips, which is capable of suppressing an increase in layout area as compared with a required storage capacity, and a semiconductor memory device. Two memory chips are sequentially selected in the way of combinations different from each other from within a plurality of memory chips each having a first storage area and a second storage area. Data are simultaneously read from the first storage area of one of the selected two memory chips and the second storage area of the other thereof.

Abstract: A memory cell array circuit of a non-volatile memory selects the drain electrodes of the memory cells, interconnected to word lines and bit lines, by two drain selectors, adapted for selecting the drain electrodes in two selection routes, so that the memory cell array circuit will select the drain electrodes in four selection routes. In writing in the memory cells, the drain electrodes of the memory cells are selected at a rate of one out of four drain electrodes and the voltage CDV is applied to the so selected drain electrode. This decreases the potential difference between the drain and source electrodes of the non-selected memory cells to prevent the erroneous writing in the non-selected memory cells. A method for writing in the memory is also provided.

Abstract: A nonvolatile memory includes a memory cell array having a plurality of memory cells, a read-out circuit outputting data stored in the memory cell array asynchronously in response to an input address signal, a selection circuit outputting an selection signal for selecting a location of the memory cell to be failed, an error making circuit receiving a test mode signal, making the data outputted from the read-out circuit fail and outputting the failed data in response to the selection signal when the test mode signal is activated, and outputting the data outputted from the read-out circuit when the test mode signal is not activated, a data latch circuit latching either the failed data or the data outputted from the read-out circuit and outputting the latched data, and an error correcting circuit detecting the error in the latched data, correcting the error, and outputting the corrected signal.

Abstract: A memory cell array circuit of a non-volatile memory selects the drain electrodes of the memory cells, interconnected to word lines and bit lines, by two drain selectors, adapted for selecting the drain electrodes in two selection routes, so that the memory cell array circuit will select the drain electrodes in four selection routes. In writing in the memory cells, the drain electrodes of the memory cells are selected at a rate of one out of four drain electrodes and the voltage CDV is applied to the so selected drain electrode. This decreases the potential difference between the drain and source electrodes of the non-selected memory cells to prevent the erroneous writing in the non-selected memory cells. A method for writing in the memory is also provided.