Abstract: A semiconductor device comprises an electrode on a substrate, an insulating layer covering an edge of the electrode and disposed on the substrate, and an organic layer comprising a charge transport layer on the electrode and insulating layer and a functional layer, wherein the insulating layer has a first portion forming an angle of 0° to 50° with respect to a surface parallel to a lower surface of the electrode, a second portion located closer to the substrate than the first portion and sloping at more than 50°, and a third portion located closer to the organic layer than the first portion and sloping at more than 50°, wherein a length of the third portion in a direction perpendicular to the parallel surface is larger than a thickness of the charge transport layer at a position in contact with the electrode.

Abstract: A semiconductor apparatus include a first electrode, an insulating layer covering an end of the first electrode, a functional layer arranged on the first electrode and the insulating layer, and a second electrode arranged above the functional layer, wherein, in a cross-section passing through the insulating layer, and the first electrode, the insulating layer includes a first portion having a side surface inclining at an angle of 45° or more and 90° or less, a second portion having a side surface inclining at an angle smaller than 45°, and a third portion below the first portion, and having a side surface inclining at an angle smaller than 45°, and wherein a length of the second portion in a direction vertical to the first electrode is larger than that of the third portion.

Abstract: A semiconductor apparatus include a first electrode, an insulating layer covering an end of the first electrode, a functional layer arranged on the first electrode and the insulating layer, and a second electrode arranged above the functional layer, wherein, in a cross-section passing through the insulating layer, and the first electrode, the insulating layer includes a first portion having a side surface inclining at an angle of 45° or more and 90° or less, a second portion having a side surface inclining at an angle smaller than 45°, and a third portion below the first portion, and having a side surface inclining at an angle smaller than 45°, and wherein a length of the second portion in a direction vertical to the first electrode is larger than that of the third portion.

Abstract: A semiconductor device comprises an electrode on a substrate, an insulating layer covering an edge of the electrode and disposed on the substrate, and an organic layer comprising a charge transport layer on the electrode and insulating layer and a functional layer, wherein the insulating layer has a first portion forming an angle of 0° to 50° with respect to a surface parallel to a lower surface of the electrode, a second portion located closer to the substrate than the first portion and sloping at more than 50°, and a third portion located closer to the organic layer than the first portion and sloping at more than 50°, wherein a length of the third portion in a direction perpendicular to the parallel surface is larger than a thickness of the charge transport layer at a position in contact with the electrode.

Abstract: A disclosed display device includes first electrodes, a second electrode, an organic layer arranged between the first electrodes and the second electrode, and an insulating film configured to cover at least a side face of each of the first electrodes. The insulating film includes a first insulating layer configured to cover at least a part of the side face of each of the first electrodes, and a second insulating layer configured to cover the side face. The first insulating layer is arranged between the side face and the second insulating layer, and includes a first part and a second part whose density is lower than a density of the first part.

Abstract: A disclosed display device includes first electrodes, a second electrode, an organic layer arranged between the first electrodes and the second electrode, and an insulating film configured to cover at least a side face of each of the first electrodes. The insulating film includes a first insulating layer configured to cover at least a part of the side face of each of the first electrodes, and a second insulating layer configured to cover the side face. The first insulating layer is arranged between the side face and the second insulating layer, and includes a first part and a second part whose density is lower than a density of the first part.

Abstract: A disclosed display device includes first electrodes, a second electrode, an organic layer arranged between the first electrodes and the second electrode, and an insulating film configured to cover at least a side face of each of the first electrodes. The insulating film includes a first insulating layer configured to cover at least a part of the side face of each of the first electrodes, and a second insulating layer configured to cover the side face. The first insulating layer is arranged between the side face and the second insulating layer, and includes a first part and a second part whose density is lower than a density of the first part.

Abstract: A disclosed display device includes first electrodes, a second electrode, an organic layer arranged between the first electrodes and the second electrode, and an insulating film configured to cover at least a side face of each of the first electrodes. The insulating film includes a first insulating layer configured to cover at least a part of the side face of each of the first electrodes, and a second insulating layer configured to cover the side face. The first insulating layer is arranged between the side face and the second insulating layer, and includes a first part and a second part whose density is lower than a density of the first part.