Abstract: A terminal including: a reception unit that receives a reference signal periodically transmitted from a network; a transmission unit that transmits a measurement result of the reference signal; and a control unit that determines whether or not to assume a reception of at least a part of the reference signal based on whether or not a specific condition is satisfied.

Abstract: A terminal comprises: a reception unit that receives a reference signal used for a purpose other than a measurement related to a radio link management; and a control unit that performs the measurement related to the radio link management using the reference signal.

Abstract: A terminal comprises: a reception unit that receives a reference signal used for a purpose other than a measurement related to a radio resource management; and a control unit that performs the measurement related to the radio resource management using the reference signal.

Abstract: A terminal comprises: a transmission unit that transmits a reference signal used for a purpose other than a measurement related to a reception quality in a physical layer; and a control unit that assumes the measurement related to the reception quality in the physical layer is performed using the reference signal.

Abstract: Provided is an overheat detection circuit configured to accurately detect a temperature of a semiconductor device even at high temperature and thus avoid outputting an erroneous detection result. The overheat detection circuit includes: a PN junction element, being a temperature sensitive element; a constant current circuit configured to supply the PN junction element with a bias current; a comparator configured to compare a voltage generated at the PN junction element and a reference voltage; a second PN junction element configured to cause a leakage current to flow through a reference voltage circuit at high temperature; and a third PN junction element configured to bypass a leakage current of the constant current circuit at the high temperature.

Abstract: Provided is an overheat detection circuit configured to accurately detect a temperature of a semiconductor device even at high temperature and thus avoid outputting an erroneous detection result. The overheat detection circuit includes: a PN junction element, being a temperature sensitive element; a constant current circuit configured to supply the PN junction element with a bias current; a comparator configured to compare a voltage generated at the PN junction element and a reference voltage; a second PN junction element configured to cause a leakage current to flow through a reference voltage circuit at high temperature; and a third PN junction element configured to bypass a leakage current of the constant current circuit at the high temperature.

Abstract: In order to provide a reticle capable of increasing the number of chips per wafer and of enabling highly accurate alignment, and an exposure method using the reticle, a first alignment mark arrangement region (8) and a second alignment mark arrangement region (9) are provided on both sides of a multi-chip region (2) so that a sum of a size of the first alignment mark arrangement region and a size of the second alignment mark arrangement region is made the same as a size of a chip region (1).

Abstract: Provided is a photoelectric conversion device for outputting an output voltage according to incident light, including photoelectric conversion unit for holding an optical charge generated by the incident light, a signal processing circuit impressed with a reference voltage for outputting the output voltage according to the incident light by applying a predetermined process to an output signal of the photoelectric conversion unit, and a switch provided between a terminal externally supplied with the reference voltage, and the signal processing circuit.

Abstract: In order to provide a reticle capable of increasing the number of chips per wafer and of enabling highly accurate alignment, and an exposure method using the reticle, a first alignment mark arrangement region (8) and a second alignment mark arrangement region (9) are provided on both sides of a multi-chip region (2) so that a sum of a size of the first alignment mark arrangement region and a size of the second alignment mark arrangement region is made the same as a size of a chip region (1).

Abstract: Provided is a photoelectric conversion device for outputting an output voltage according to incident light, including photoelectric conversion unit for holding an optical charge generated by the incident light, a signal processing circuit impressed with a reference voltage for outputting the output voltage according to the incident light by applying a predetermined process to an output signal of the photoelectric conversion unit, and a switch provided between a terminal externally supplied with the reference voltage, and the signal processing circuit.

Abstract: Provide is a photoelectric conversion device capable of correcting an optical signal with high accuracy and more adaptable to high-speed operations, including: an optical signal common output line (10) commonly connected to all the photoelectric conversion units (30), for outputting an amplified optical signal from each of the photoelectric conversion units in chronological order, and having a first parasitic capacitor (31); an initial voltage common output line (11) commonly connected to all the photoelectric conversion units (30), for outputting the amplified initial voltage from each of the photoelectric conversion units (30) in chronological order, and having a second parasitic capacitor (32); and a capacitor group (20) commonly connected to one of the optical signal common output line (10) and the initial voltage common output line (11), which has a capacitance value substantially equal to a differential capacitance value between the first parasitic capacitor (31) and the second parasitic capacitor (32).