Abstract: Provided is a semiconductor device in which one mesa portion of two mesa portions in contact with a gate trench portion is an active mesa portion in which an emitter region of a first conductivity type having a doping concentration higher than that of a drift region is arranged in contact with the gate trench portion, the other mesa portion of two mesa portions in contact with the gate trench portion is a dummy mesa portion having no emitter region, and a dummy contact resistance which is a resistance of the dummy mesa portion and an emitter electrode is 1000 times or more as high as an active contact resistance which is a resistance of the active mesa portion and the emitter electrode.

Abstract: Provided is a semiconductor device comprising a semiconductor substrate, the semiconductor substrate comprising an active portion, a second conductivity type circumferential well region surrounding the active portion in a top view, and a trench portion provided in the active portion on an upper surface of the semiconductor substrate, wherein the active portion includes a center portion including a first conductivity type emitter region, and a circumferential portion surrounding the center portion, wherein the center portion includes a second conductivity type active side bottom region provided across bottoms of at least two of the trench portion, the circumferential portion includes a second conductivity type circumferential side bottom region electrically connected to the circumferential well region, facing the active side bottom region, and provided at the bottom of the trench portion, and the active side bottom region and the circumferential side bottom region are provided apart from each other.

Abstract: Provided is a semiconductor device including: a first trench contact portion provided to an inside of a contact region; a second trench contact portion provided to an inside of an emitter region; a first plug portion of a second conductivity type, which is provided in contact with a lower end of the first trench contact portion and has a higher concentration than a base region; and a second plug portion of a second conductivity type, which is provided in contact with a lower end of the second trench contact portion, is provided to a position closer to a lower surface than the first plug portion, and has a higher concentration than the base region.

Abstract: Provided is a semiconductor device in which one mesa portion of two mesa portions in contact with a gate trench portion is an active mesa portion in which an emitter region of a first conductivity type having a doping concentration higher than that of a drift region is arranged in contact with the gate trench portion, the other mesa portion of two mesa portions in contact with the gate trench portion is a dummy mesa portion having no emitter region, and a dummy contact resistance which is a resistance of the dummy mesa portion and an emitter electrode is 1000 times or more as high as an active contact resistance which is a resistance of the active mesa portion and the emitter electrode.

Abstract: Provided is a semiconductor device which includes a semiconductor substrate including a transistor portion and a diode portion. The transistor portion includes an injection suppression region that suppresses injection of a carrier of a second conductivity type at an end portion on the diode portion side in a top view of the semiconductor substrate. Both the transistor portion and the diode portion include a base region of a second conductivity type on a front surface of the semiconductor substrate, the transistor portion further includes an emitter region of a first conductivity type and an extraction region of a second conductivity type having a higher doping concentration than the base region on the front surface of the semiconductor substrate, and the injection suppression region is not provided with the emitter region and the extraction region.

Abstract: An ink discharging device contains an ink containing an organic solvent with an SP value of from 9.0 to 12.0, a white pigment, a polyurethane resin with a glass transition temperature Tg of 0 degrees C. or lower, and water, and an ink discharging unit including a nozzle plate including a liquid repellent layer containing a silicone resin, the ink discharging unit for discharging the ink, wherein the proportion of the organic solvent to the entire of the ink is from 0.5 to 2.5 percent by mass and the proportion of the white pigment to the entire of the ink is from 6 to 15 percent by mass.

Abstract: A set of inkjet inks used for forming an image by application of an ink on a cloth is provided. The set includes an ink and a pre-processing fluid. The pre-processing fluid contains water, a compound that flocculates an anionic compound, and at least one emulsified sizing agent.

Abstract: A resin-metal composite body is provided that includes a resin base material having a surface roughness Sq of 1.5 ?m or more and a surface roughness Sku of 4.5 ?m or less, and a metal plating on the resin base material.

Abstract: Provided is a semiconductor device which includes a semiconductor substrate including a transistor portion and a diode portion. The transistor portion includes an injection suppression region that suppresses injection of a carrier of a second conductivity type at an end portion on the diode portion side in a top view of the semiconductor substrate. The diode portion includes a lifetime control region including a lifetime killer. Both the transistor portion and the diode portion include a base region of a second conductivity type on a surface of the semiconductor substrate, the transistor portion further includes an emitter region of a first conductivity type and an extraction region of a second conductivity type having a higher doping concentration than the base region on the surface of the semiconductor substrate, and the injection suppression region is not provided with the emitter region and the extraction region.

Abstract: Provided is a semiconductor device comprising a semiconductor substrate provided with a drift region of a first conductivity type, wherein the substrate includes: an active portion; and a trench portion provided in the active portion at an upper surface of the substrate, the active portion includes: a first region in which trench portions including the trench portion are arrayed at a first trench interval in an array direction; and a second region in which trench portions including the trench portion are arrayed at a second trench interval greater than the first trench interval in the array direction, the first region includes a first bottom region of a second conductivity type provided over bottoms of at least two trench portions of the trench portions, and the second region includes a second bottom region of the second conductivity type provided at a bottom of one trench portion of the trench portions.

Abstract: Provided is a semiconductor device comprising: a semiconductor substrate including a drift region of a first conductivity type; a base region of a second conductivity type provided between the drift region and the upper surface of the semiconductor substrate; a plurality of trench portions provided from the upper surface of the semiconductor substrate to below the base region; a lower end region of the second conductivity type provided in contact with lower ends of two or more trench portions; a well region of the second conductivity type which is provided from the upper surface of the semiconductor substrate to below the base region, and has a higher doping concentration than the base region; and a high resistance region of the second conductivity type which is arranged between the lower end region and the well region in the top view and has a lower doping concentration than the lower end region.

Abstract: Provided is an insulated gate bipolar transistor including: a base region which is provided between an emitter region and a drift region; an accumulation region which is provided between a base region and a drift region, and which has a doping concentration higher than that of the drift region; a gate trench portion which is provided from an upper surface of a semiconductor substrate to a portion below the accumulation region; and a lower end region which is provide to be in contact with a lower end of the gate trench portion; wherein the accumulation region has a first concentration peak in which the doping concentration indicates a maximum value in a depth direction, and a distance between the first concentration peak and the lower end region in a depth direction is less than a distance between the first concentration peak and the base region in the depth direction.

Abstract: An ink discharging device contains an ink containing an organic solvent with an SP value of from 9.0 to 12.0, a white pigment, a polyurethane resin with a glass transition temperature Tg of 0 degrees C. or lower, and water, and an ink discharging unit including a nozzle plate including a liquid repellent layer containing a silicone resin, the ink discharging unit for discharging the ink, wherein the proportion of the organic solvent to the entire of the ink is from 0.5 to 2.5 percent by mass and the proportion of the white pigment to the entire of the ink is from 6 to 15 percent by mass.

Abstract: An ink contains a coloring material, an organic solvent comprising an organic solvent A and a compound represented by the following Chemical Formula I and a resin, wherein the proportion of the entire of the coloring material and the solid content of the resin to the entire of the ink is 15 percent by mass or greater, wherein the organic solvent A contains a polyol with a boiling point of 180 degrees C. or higher and with an equilibrium moisture content of 36 percent by mass or greater at 23 degrees C. and 80 percent RH.

Abstract: Provided is a semiconductor device including: a first trench contact portion provided to an inside of a contact region; a second trench contact portion provided to an inside of an emitter region; a first plug portion of a second conductivity type, which is provided in contact with a lower end of the first trench contact portion and has a higher concentration than a base region; and a second plug portion of a second conductivity type, which is provided in contact with a lower end of the second trench contact portion, is provided to a position closer to a lower surface than the first plug portion, and has a higher concentration than the base region.

Abstract: Provided is a semiconductor device in which one mesa portion of two mesa portions in contact with a gate trench portion is an active mesa portion in which an emitter region of a first conductivity type having a doping concentration higher than that of a drift region is arranged in contact with the gate trench portion, the other mesa portion of two mesa portions in contact with the gate trench portion is a dummy mesa portion having no emitter region, and a dummy contact resistance which is a resistance of the dummy mesa portion and an emitter electrode is 1000 times or more as high as an active contact resistance which is a resistance of the active mesa portion and the emitter electrode.

Abstract: A set of inkjet inks used for forming an image by application of an ink on a cloth is provided. The set includes an ink and a pre-processing fluid. The pre-processing fluid contains water, a compound that flocculates an anionic compound, and at least one emulsified sizing agent.

Abstract: Provided is a semiconductor device comprising a semiconductor substrate, the semiconductor substrate comprising an active portion, a second conductivity type circumferential well region surrounding the active portion in a top view, and a trench portion provided in the active portion on an upper surface of the semiconductor substrate, wherein the active portion includes a center portion including a first conductivity type emitter region, and a circumferential portion surrounding the center portion, wherein the center portion includes a second conductivity type active side bottom region provided across bottoms of at least two of the trench portion, the circumferential portion includes a second conductivity type circumferential side bottom region electrically connected to the circumferential well region, facing the active side bottom region, and provided at the bottom of the trench portion, and the active side bottom region and the circumferential side bottom region are provided apart from each other.

Abstract: An ink set includes a white ink and a color ink. The white ink and the color ink each independently include water-dispersible resin particles, and a blocked isocyanate compound. A resin of the water-dispersible resin particles includes a crosslinkable functional group. The blocked isocyanate compound includes a functional group that can crosslink with the resin of the water-dispersible resin particles. An absolute value of a difference in static surface tension between the white ink and the color ink at 25° C. is 1.0 mN/m or less. Absolute values of differences in dynamic surface tension between the white ink and the color ink at 25° C. with bubble lifetime of 15 msec, a bubble lifetime of 150 msec, and a bubble lifetime of 1,500 msec are each independently 1.0 mN/m or less. The bubble lifetime is measured according to the maximum bubble pressure method.

Abstract: A method for producing a laminated body including a first curable liquid composition and a second curable liquid composition, the method including: forming a first liquid layer formed of the first curable liquid composition; impacting the second curable liquid composition onto the first liquid layer, to form a second liquid droplet layer formed of the second curable liquid composition inside the first liquid layer or at a lower part of the first liquid layer in a direction in which second liquid droplets for the second liquid droplet layer are impacted onto the first liquid layer; and curing the first liquid layer and the second liquid droplet layer.