Patents by Inventor Daisuke SAKII

Daisuke SAKII has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11086219
    Abstract: To provide a negative-type photosensitive resin composition that is highly sensitive and capable of formation of a low-taper pattern shape and that is capable of providing a cured film that is excellent in heat resistance. A negative-type photosensitive resin composition contains an (A) alkali-soluble resin, a (B) radical polymerizable compound, and a (C) photo initiator, the negative-type photosensitive resin composition being characterized in that the (A) alkali-soluble resin contains one or more species of resins selected from a (A-1) polyimide, a (A-2) polybenzoxazole, a (A-3) polyimide precursor, a (A-4) polybenzoxazole precursor, a (A-5) polysiloxane, and a (A-6) cardo based resin, and that the (B) radical polymerizable compound contains a compound having five ethylenic unsaturated bond groups in a (B-1) molecule, in an amount within the range of 51 to 99 mass %.
    Type: Grant
    Filed: March 15, 2017
    Date of Patent: August 10, 2021
    Assignee: TORAY INDUSTRIES, INC.
    Inventors: Yugo Tanigaki, Daisuke Sakii, Satoshi Kamemoto
  • Publication number: 20210083214
    Abstract: A field-effect transistor including at least: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode, wherein the semiconductor layer contains a carbon nanotube, and the gate insulating layer contains a polymer having inorganic particles bound thereto. Provided is a field-effect transistor and a method for producing the field-effect transistor, wherein the field-effect transistor causes decreased leak current and furthermore enables a semiconductor solution to be uniformly applied.
    Type: Application
    Filed: September 25, 2018
    Publication date: March 18, 2021
    Applicant: TORAY INDUSTRIES, INC.
    Inventors: Daisuke SAKII, Seiichiro MURASE, Junji WAKITA
  • Patent number: 10790461
    Abstract: A field-effect transistor includes: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode. The gate insulating layer comprising at least a polysiloxane having a structural unit represented by a general formula (1): in the general formula (1), R1 represents a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group, or an alkenyl group; R2 represents a hydrogen atom, an alkyl group, a cycloalkyl group, or a silyl group; m represents 0 or 1; A1 represents an organic group including at least two groups selected from a carboxy group, a sulfo group, a thiol group, a phenolic hydroxy group, or a derivative of these groups.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: September 29, 2020
    Assignee: TORAY INDUSTRIES, INC.
    Inventors: Daisuke Sakii, Seiichiro Murase, Junji Wakita
  • Publication number: 20200035925
    Abstract: A problem addressed by the present invention is to provide a semiconductor device that is free from deterioration over time, is stable, and has n-type semiconductor characteristics. A main object of the present invention is to provide a semiconductor device that is characterized by including: a substrate; a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer insulating the semiconductor layer from the gate electrode; and a second insulating layer in contact with the semiconductor layer on the opposite side of the semiconductor layer from the gate insulating layer; wherein the semiconductor layer contains a carbon nanotube; wherein the second insulating layer contains an electron-donating material having one or more selected from a nitrogen atom and a phosphorus atom; and wherein the second insulating layer has an oxygen permeability of 4.0 cc/(m2·24 h·atm) or less.
    Type: Application
    Filed: February 28, 2018
    Publication date: January 30, 2020
    Applicant: TORAY INDUSTRIES, INC.
    Inventors: Kazuki ISOGAI, Seiichiro MURASE, Daisuke SAKII
  • Publication number: 20190378998
    Abstract: A field-effect transistor includes: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode. The gate insulating layer comprising at least a polysiloxane having a structural unit represented by a general formula (1): in the general formula (1), R1 represents a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group, or an alkenyl group; R2 represents a hydrogen atom, an alkyl group, a cycloalkyl group, or a silyl group; m represents 0 or 1; A1 represents an organic group including at least two groups selected from a carboxy group, a sulfo group, a thiol group, a phenolic hydroxy group, or a derivative of these groups.
    Type: Application
    Filed: November 16, 2017
    Publication date: December 12, 2019
    Applicant: TORAY INDUSTRIES, INC.
    Inventors: Daisuke SAKII, Seiichiro MURASE, Junji WAKITA
  • Publication number: 20180356729
    Abstract: To provide a negative-type photosensitive resin composition that is highly sensitive and capable of formation of a low-taper pattern shape and that is capable of providing a cured film that is excellent in heat resistance. A negative-type photosensitive resin composition contains an (A) alkali-soluble resin, a (B) radical polymerizable compound, and a (C) photo initiator, the negative-type photosensitive resin composition being characterized in that the (A) alkali-soluble resin contains one or more species of resins selected from a (A-1) polyimide, a (A-2) polybenzoxazole, a (A-3) polyimide precursor, a (A-4) polybenzoxazole precursor, a (A-5) polysiloxane, and a (A-6) cardo based resin, and that the (B) radical polymerizable compound contains a compound having five ethylenic unsaturated bond groups in a (B-1) molecule, in an amount within the range of 51 to 99 mass %.
    Type: Application
    Filed: March 15, 2017
    Publication date: December 13, 2018
    Applicant: TORAY INDUSTRIES, INC.
    Inventors: Yugo TANIGAKI, Daisuke SAKII, Satoshi KAMEMOTO