Abstract: A field-effect transistor including at least: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode, wherein the semiconductor layer contains a carbon nanotube, and the gate insulating layer contains a polymer having inorganic particles bound thereto. Provided is a field-effect transistor and a method for producing the field-effect transistor, wherein the field-effect transistor causes decreased leak current and furthermore enables a semiconductor solution to be uniformly applied.

Abstract: To provide a negative-type photosensitive resin composition that is highly sensitive and capable of formation of a low-taper pattern shape and that is capable of providing a cured film that is excellent in heat resistance. A negative-type photosensitive resin composition contains an (A) alkali-soluble resin, a (B) radical polymerizable compound, and a (C) photo initiator, the negative-type photosensitive resin composition being characterized in that the (A) alkali-soluble resin contains one or more species of resins selected from a (A-1) polyimide, a (A-2) polybenzoxazole, a (A-3) polyimide precursor, a (A-4) polybenzoxazole precursor, a (A-5) polysiloxane, and a (A-6) cardo based resin, and that the (B) radical polymerizable compound contains a compound having five ethylenic unsaturated bond groups in a (B-1) molecule, in an amount within the range of 51 to 99 mass %.

Abstract: A field-effect transistor including at least: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode, wherein the semiconductor layer contains a carbon nanotube, and the gate insulating layer contains a polymer having inorganic particles bound thereto. Provided is a field-effect transistor and a method for producing the field-effect transistor, wherein the field-effect transistor causes decreased leak current and furthermore enables a semiconductor solution to be uniformly applied.

Abstract: A field-effect transistor includes: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode. The gate insulating layer comprising at least a polysiloxane having a structural unit represented by a general formula (1): in the general formula (1), R1 represents a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group, or an alkenyl group; R2 represents a hydrogen atom, an alkyl group, a cycloalkyl group, or a silyl group; m represents 0 or 1; A1 represents an organic group including at least two groups selected from a carboxy group, a sulfo group, a thiol group, a phenolic hydroxy group, or a derivative of these groups.

Abstract: A problem addressed by the present invention is to provide a semiconductor device that is free from deterioration over time, is stable, and has n-type semiconductor characteristics. A main object of the present invention is to provide a semiconductor device that is characterized by including: a substrate; a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer insulating the semiconductor layer from the gate electrode; and a second insulating layer in contact with the semiconductor layer on the opposite side of the semiconductor layer from the gate insulating layer; wherein the semiconductor layer contains a carbon nanotube; wherein the second insulating layer contains an electron-donating material having one or more selected from a nitrogen atom and a phosphorus atom; and wherein the second insulating layer has an oxygen permeability of 4.0 cc/(m2·24 h·atm) or less.

Abstract: A field-effect transistor includes: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode. The gate insulating layer comprising at least a polysiloxane having a structural unit represented by a general formula (1): in the general formula (1), R1 represents a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group, or an alkenyl group; R2 represents a hydrogen atom, an alkyl group, a cycloalkyl group, or a silyl group; m represents 0 or 1; A1 represents an organic group including at least two groups selected from a carboxy group, a sulfo group, a thiol group, a phenolic hydroxy group, or a derivative of these groups.

Abstract: To provide a negative-type photosensitive resin composition that is highly sensitive and capable of formation of a low-taper pattern shape and that is capable of providing a cured film that is excellent in heat resistance. A negative-type photosensitive resin composition contains an (A) alkali-soluble resin, a (B) radical polymerizable compound, and a (C) photo initiator, the negative-type photosensitive resin composition being characterized in that the (A) alkali-soluble resin contains one or more species of resins selected from a (A-1) polyimide, a (A-2) polybenzoxazole, a (A-3) polyimide precursor, a (A-4) polybenzoxazole precursor, a (A-5) polysiloxane, and a (A-6) cardo based resin, and that the (B) radical polymerizable compound contains a compound having five ethylenic unsaturated bond groups in a (B-1) molecule, in an amount within the range of 51 to 99 mass %.