Abstract: A flat panel image display device comprises: a rear plate including plural electron emission elements; a face plate disposed opposed to the rear plate, fluorescent members being disposed on a surface of the face plate opposed to the rear plate, and the fluorescent members being covered with a metal back film; and a voltage applying unit to apply an acceleration voltage of 8 kV to 15 kV between the rear plate and the face plate, wherein the metal back film has a getter material, and a current luminance characteristic of the fluorescent member satisfies ??0.9 if L=kl? (L is luminance, l is an irradiation current, and k is a constant). Thus, a high contrast can be acquired even if electrons scattered backward again bombard and penetrate into the fluorescent member.

Abstract: An object of the present invention is to enhance a converging property of an electron beam in an electron-emitting device in which a cathode electrode, an insulating layer, and a gate electrode are laminated and a through hole is formed by partially removing the gate electrode so as to obtain an exposed portion of the cathode electrode. In such an,electron-emitting device in which the cathode electrode, the insulating layer, and the gate electrode are laminated and the through hole is formed by partially removing the gate electrode so as to obtain the exposed portion of the cathode electrode, only a central region of the electron-emitting layer on the cathode electrode is connected to the cathode electrode. With this structure, it becomes possible to generate an electron beam only from the central region of the electron-emitting layer connected to the cathode electrode and to realize an electron-emitting device having a small beam diameter and a high-definition image-forming apparatus.

Abstract: The following material is used as a host for phosphor material in which an activator is contained: SrxBa1-xGa2S4 where, 0<X<1, thereby emitting fluorescent light with high luminance at a visibile range and a wide color reproducible range.

Abstract: A film deposition apparatus for forming a film on a substrate includes a chamber capable of maintaining a reduced-pressure atmosphere. The chamber includes a control electrode, a substrate holder opposite to the control electrode, the substrate holder holding the substrate, and a filament for emitting electrons disposed between the substrate holder and the control electrode. The film deposition apparatus further includes a unit for controlling the potential applied to the control electrode to be lower than the potential applied to the filament and a unit for controlling the potential applied to the substrate to be higher than the potential applied to the filament.

Abstract: There is provided an electron-emitting device of a field emission type, with which the spot size of an electron beam is small, an electron emission area is large, highly efficient electron emission is possible with a low voltage, and a manufacturing process is easy. The electron-emitting device includes a layer 2 which is electrically connected to a cathode electrode 5, and a plurality of particles 3 which contains a material having resistivity lower than that of a material constituting the layer 2, and is wherein a density of particles 3 in the layer 2 is 1×1014/cm3 or more and 5×1018/cm3 or less.

Abstract: Disclosed is an electron-emitting device, an electron source, and an image-forming apparatus that have uniform electron-emitting characteristics, emit electron beams whose diameters are small, have simple constructions, and are easy to be manufactured. The electron-emitting device comprising: a first electrode arranged on a surface of a substrate; an insulating layer arranged on the first electrode; a second electrode arranged on the insulating layer; and an electron-emitting film arranged on the second electrode, where the second electrode has two side surfaces that oppose each other in a direction parallel to the surface of the substrate, and the electron-emitting film is arranged so as to be shifted toward one of the two side surfaces.

Abstract: A film deposition apparatus for forming a film on a substrate includes a chamber capable of maintaining a reduced-pressure atmosphere. The chamber includes a control electrode, a substrate holder opposite to the control electrode, the substrate holder holding the substrate, and a filament for emitting electrons disposed between the substrate holder and the control electrode. The film deposition apparatus further includes a unit for controlling the potential applied to the control electrode to be lower than the potential applied to the filament and a unit for controlling the potential applied to the substrate to be higher than the potential applied to the filament.

Abstract: An electron emitting apparatus that can realize a convergence of electron trajectories and an improved electron emission efficiency. The apparatus comprises a substrate having a first primary surface that is substantially planar, an electron emitting device comprising first and second electroconductive members disposed on the primary surface and at an interval from one another, and an anode electrode having a substantially planar surface opposite to the first primary surface. A voltage applying means of the apparatus applies a potential higher than a potential applied to the first electroconductive member to the second electroconductive member to irradiate electrons emitted from the electron emitting device onto the anode electrode.

Abstract: An object of the present invention is to enhance a converging property of an electron beam in an electron-emitting device in which a cathode electrode, an insulating layer, and a gate electrode are laminated and a through hole is formed by partially removing the gate electrode so as to obtain an exposed portion of the cathode electrode. In such an,electron-emitting device in which the cathode electrode, the insulating layer, and the gate electrode are laminated and the through hole is formed by partially removing the gate electrode so as to obtain the exposed portion of the cathode electrode, only a central region of the electron-emitting layer on the cathode electrode is connected to the cathode electrode. With this structure, it becomes possible to generate an electron beam only from the central region of the electron-emitting layer connected to the cathode electrode and to realize an electron-emitting device having a small beam diameter and a high-definition image-forming apparatus.

Abstract: Disclosed are methods for driving an electron-emitting device, an electron source, and an image-forming apparatus, driving circuits for an electron source and an image-forming apparatus, and an electron source and an image-forming apparatus, with each of which electron emission is effectively halted. A voltage (Vg−Vc)>0 is applied to an electron-emitting device placed in a driving state in which electrons should be emitted, thereby having the electron-emitting device emit electrons. A voltage (Vg−Vc)<0 is applied to an electron-emitting device placed in a halt state in which no electrons should be emitted, thereby having the electron-emitting device halt electron emission.

Abstract: An electron emitting apparatus that can realize a convergence of electron trajectories and an improved electron emission efficiency. The apparatus comprises a substrate having a first primary surface that is substantially planar, an electron emitting device comprising first and second electroconductive members disposed on the primary surface and at an interval from one another, and an anode electrode having a substantially planar surface opposite to the first primary surface. A voltage applying means of the apparatus applies a potential higher than a potential applied to the first electroconductive member to the second electroconductive member to irradiate electrons emitted from the electron emitting device onto the anode electrode.

Abstract: An electron-emitting apparatus according to the present invention comprises (A) a substrate, which has a first major surface and a second major surface that are positioned opposite each other, (B) an electron-emitting device, which includes a first electrode, to which a first voltage is applied, and a second electrode, to which a voltage Vf is applied, that are mounted, with an intervening interval, on the first major surface, (C) an anode electrode, which is located opposite and at a distance H from the first major surface, (D) first voltage application means, for applying to the second electrode the voltage Vf that is higher than the first voltage, and (E) second voltage application means, for applying to the anode electrode a voltage Va that is higher than the voltage Vf, wherein a space defined between the anode electrode and the electron-emitting device is maintained in a reduced-pressure condition, and wherein, when a value Xs=H*Vf/(&pgr;*Va) is established for a plane that is substantially per