Abstract: When forming a hollow portion between each color filter, in order to realize the formation of the hollow portions with a narrower width, a plurality of light receiving portions are formed on the upper surface of a semiconductor substrate, a plurality of color filters corresponding to each of the light receiving portions are formed above the semiconductor substrate, a photoresist is formed on each color filter, side walls are formed on the side surfaces of the photoresist, and a hollow portion is formed between each color filter by performing etching using at least the side walls as a mask.

Abstract: A color filter 5 is formed above a semiconductor substrate SB, in an area above a predetermined light receiving portion among a plurality of light receiving portions 1. A sacrificial layer 8 is formed on upper and side of the first color filter 5. Color filters 6 and 7 are formed above the semiconductor substrate SB, in areas above other light receiving portions adjacent to the predetermined light receiving portion, to expose at least part of the upper surface area of the first color filter 5 on the sacrificial layer 8. The sacrificial layer 8 is etched to remove the upper and side areas of the color filter 5 on the sacrificial layer 8 to form hollow portions 9 between the color filter 5 and the color filter 6 and between the color filter 5 and the color filter 7.

Abstract: A method of manufacturing a semiconductor apparatus, comprising forming a structure including an insulating layer on a substrate, and an electrode on the structure, forming an insulating first film covering the electrode and the structure, forming an opening in a projection, of the first film, formed by a step between upper faces of the electrode and the structure, to expose part of the upper face of the electrode as a first portion, forming a second film covering the first film and the first portion, forming a protective film in the opening by processing the second film, the protective film covering a side face defining the opening and the first portion and being not formed on an upper face of the projection, and forming a third film on the first film and the protective film by spin coating.

Abstract: A method of manufacturing a solid-state image sensor includes preparing a structure including a photoelectric converter formed in an image sensing region and a pad electrode formed in a pad region, forming a first organic film including a first organic portion arranged in the image sensing region of the structure in the image sensing region and the pad region, forming a color filter layer on the first organic portion, forming a second organic film in the image sensing region and the pad region, forming an inorganic film in the image sensing region and the pad region, and etching the inorganic film, the second organic film, and the first organic film so as to form an opening which communicates with the pad electrode.

Abstract: To realize simplification of a process of forming hollow portions in a solid-state imaging apparatus, a plurality of light receiving portions is formed on a semiconductor substrate, and color filter layers as hollow portion forming layers are formed above the semiconductor substrate (FIG. 1A). A sealable layer for opening boundary portions of the color filter layers is formed on the color filter layers (FIG. 1B). Hollow portions are formed on side surfaces of the color filter layer by etching using the sealable layer as a mask (FIG. 1C). The sealable layer is heated and softened to connect mutually adjacent sealable layers to form a sealing layer for sealing the aperture regions of the hollow portions (FIG. 1D).

Abstract: A color filter 5 is formed above a semiconductor substrate SB, in an area above a predetermined light receiving portion among a plurality of light receiving portions 1. A sacrificial layer 8 is formed on upper and side of the first color filter 5. Color filters 6 and 7 are formed above the semiconductor substrate SB, in areas above other light receiving portions adjacent to the predetermined light receiving portion, to expose at least part of the upper surface area of the first color filter 5 on the sacrificial layer 8. The sacrificial layer 8 is etched to remove the upper and side areas of the color filter 5 on the sacrificial layer 8 to form hollow portions 9 between the color filter 5 and the color filter 6 and between the color filter 5 and the color filter 7.

Abstract: When forming a hollow portion between each color filter, in order to realize the formation of the hollow portions with a narrower width, a plurality of light receiving portions are formed on the upper surface of a semiconductor substrate, a plurality of color filters corresponding to each of the light receiving portions are formed above the semiconductor substrate, a photoresist is formed on each color filter, side walls are formed on the side surfaces of the photoresist, and a hollow portion is formed between each color filter by performing etching using at least the side walls as a mask.

Abstract: The present invention provides a solid-state imaging apparatus which has hollow portions provided around each of color filters and achieves the prevention of the peeling of each of the color filters. The solid-state imaging apparatus having a plurality of light receiving portions provided on a semiconductor substrate includes: a plurality of color filters arranged correspondingly to each of the plurality of light receiving portions; and hollow portions formed around each of the plurality of color filters, wherein each of the color filters has one peripheral part contacting with adjacent one or more of the color filters.

Abstract: A method of manufacturing a solid-state image sensor includes preparing a structure including a photoelectric converter formed in an image sensing region and a pad electrode formed in a pad region, forming a first organic film including a first organic portion arranged in the image sensing region of the structure in the image sensing region and the pad region, forming a color filter layer on the first organic portion, forming a second organic film in the image sensing region and the pad region, forming an inorganic film in the image sensing region and the pad region, and etching the inorganic film, the second organic film, and the first organic film so as to form an opening which communicates with the pad electrode.