Abstract: An electron microscope analysis system includes a detector that captures an electron microscope image formed on a detection plane by an electron beam that irradiates a specimen to be observed and transmits through the specimen. Electrons each having a de Broglie wave motion are integrated to be a linear rotor that is a collection of the electrons each having the de Broglie wave motion, so that each electron can be recognized, the principle of conservation of electric charge can be satisfied, and interaction with the specimen can be calculated. The electron is represented as a detection point on the detection plane, for comparison with actual measurement data when the number of electrons is small, to reduce damage of the specimen by the electron beam, and to obtain information of the specimen when an amount of irradiation is small.

Abstract: An object wave made of an electron beam influenced by a sample and reference beam made of an electron beam not influenced by the sample are made to interfere with each other where a magnetic field has been applied to the sample to create a first electron-beam hologram and create a first reconstructed phase image from the first electron-beam hologram. An object wave made of an electron beam influenced by the sample and a reference beam made of an electron beam not influenced by the sample are made to interfere where a magnetic field has not been applied to the sample to create a second electron-beam hologram and create a second reconstructed phase image from the second electron-beam hologram. Magnetic field information indicating the influence of the magnetic field on the sample is acquired on the basis of the difference between the first and second reconstructed phase images.

Abstract: An object wave made of an electron beam influenced by a sample and reference beam made of an electron beam not influenced by the sample are made to interfere with each other where a magnetic field has been applied to the sample to create a first electron-beam hologram and create a first reconstructed phase image from the first electron-beam hologram. An object wave made of an electron beam influenced by the sample and a reference beam made of an electron beam not influenced by the sample are made to interfere where a magnetic field has not been applied to the sample to create a second electron-beam hologram and create a second reconstructed phase image from the second electron-beam hologram. Magnetic field information indicating the influence of the magnetic field on the sample is acquired on the basis of the difference between the first and second reconstructed phase images.

Abstract: A silicon carbide semiconductor device includes a first conductivity type silicon carbide substrate having an active region and a termination region surrounding the active region, a plurality of unit cells located in the active region, and a termination structure located in the termination region. Each unit cell is provided with a transistor structure. The termination structure includes the silicon carbide semiconductor layer, a second conductivity type second body region surrounding the active region, one or more second conductivity type rings surrounding the second body region, one or more outer-circumferential upper source electrodes surrounding the active region, and an upper gate electrode. The silicon carbide semiconductor device further includes a first protective film and a second protective film.

Abstract: A silicon carbide semiconductor device includes a first conductivity type silicon carbide substrate having an active region and a termination region surrounding the active region, a plurality of unit cells located in the active region, and a termination structure located in the termination region. Each unit cell is provided with a transistor structure. The termination structure includes the silicon carbide semiconductor layer, a second conductivity type second body region surrounding the active region, one or more second conductivity type rings surrounding the second body region, one or more outer-circumferential upper source electrodes surrounding the active region, and an upper gate electrode. The silicon carbide semiconductor device further includes a first protective film and a second protective film.

Abstract: A vehicle rear structure located between a backrest and a luggage space includes a first cross member and fixation members. Each fixation member has a joint portion, a first plate and a second plate. The length of a first path extending from a first intersection point of a line passing through a fixation portion at which the second plate is fixed to the vehicle body and an upper side of the second plate through an upper side of the first plate up to the joint portion is as long as a second path extending from a second intersection point of the line and a lower side of the second plate through a lower side of the first plate up to the joint portion.

Abstract: A vehicle rear structure located between a backrest and a luggage space includes a first cross member and fixation members. Each fixation member has a joint portion, a first plate and a second plate. The length of a first path extending from a first intersection point of a line passing through a fixation portion at which the second plate is fixed to the vehicle body and an upper side of the second plate through an upper side of the first plate up to the joint portion is as long as a second path extending from a second intersection point of the line and a lower side of the second plate through a lower side of the first plate up to the joint portion.

Abstract: There is disclosed an electron microscope equipped with a magnetic microprobe. The microscope can apply a strong electric field to a local area on a specimen made of a magnetic material. The magnetic flux density per unit area of the microprobe is high. The microscope includes a biprism for producing interference between an electron beam transmitted through the specimen and an electron beam passing through a vacuum. The specimen is held to a holder. The microprobe is made of a magnetic material and has a needle-like tip. The microscope further includes a moving mechanism capable of moving the microprobe toward and away from the specimen.

Abstract: There is disclosed an electron microscope equipped with a magnetic microprobe. The microscope can apply a strong electric field to a local area on a specimen made of a magnetic material. The magnetic flux density per unit area of the microprobe is high. The microscope includes a biprism for producing interference between an electron beam transmitted through the specimen and an electron beam passing through a vacuum. The specimen is held to a holder. The microprobe is made of a magnetic material and has a needle-like tip. The microscope further includes a moving mechanism capable of moving the microprobe toward and away from the specimen.