Abstract: An electrochromic element including: a first electrode; a second electrode disposed to face the first electrode with a gap between the first electrode and the second electrode; a first electrochromic layer disposed on or above the first electrode, including conductor or semiconductor nano-structures and an electrochromic compound; and an electrolyte layer including an electrolyte, disposed between the first electrochromic layer and the second electrode, wherein the electrochromic compound is a compound represented by General Formula 1, and an anion of the electrolyte is a monovalent anion having oxidation potential higher than reduction potential of a dication of General Formula 1 by 3.1 V or greater, where X? is a monovalent anion having oxidation potential higher than reduction potential of the dication of General Formula 1 by 3.

Abstract: A semiconductor element includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first intermediate layer, a second intermediate layer, a source electrode, a drain electrode, and a gate electrode. The band gap of the second semiconductor layer is larger than the band gaps of the first semiconductor layer and the third semiconductor layer. The band gaps of the first intermediate layer and the second intermediate layer that sandwich the second semiconductor layer are larger than the band gap of the second semiconductor layer.

Abstract: A method of manufacturing a light emitting element includes forming an n-type semiconductor layer that includes an n-type clad layer and AlxGa1-xN (0.1?x?1) as a main component, forming an n-side contact electrode that includes a laminate structure including a Ti layer and a Ru layer, the Ti layer being in contact with the n-type semiconductor layer, and forming an ohmic contact of the n-type semiconductor layer and the Ti layer by a heat treatment.

Abstract: To provide a method for producing a Group III nitride semiconductor light-emitting device using a substrate containing Al such as AlN substrate while suppressing polarity inversion. The production method comprising an oxide film formation step, a first Group III nitride layer formation step, a first semiconductor layer formation step, a light-emitting layer formation step, and a second semiconductor layer formation step. In the production method, an AlN substrate or AlGaN substrate is employed. In the oxide film formation step, an oxide film containing Al atoms, N atoms, and O atoms is formed. In the first Group III nitride layer formation step, an AlN layer or AlGaN layer is formed as the first Group III nitride layer under the condition that the substrate temperature 1200° C. to 1450° C.

Abstract: A light-emitting element includes an n-type semiconductor layer mainly including AlxGa1?XN (0.5?x?1), a p-type semiconductor layer, a light-emitting layer sandwiched between the n-type semiconductor layer and the p-type semiconductor layer, an n-electrode connected to the n-type semiconductor layer, and a plurality of p-electrodes that are connected to the p-type semiconductor layer and are arranged in a dot pattern. An area of the n-electrode is not less than 25% and not more than 50% of a chip area.

Abstract: To provide a Group III nitride semiconductor light-emitting device in which a semiconductor layer is grown using a substrate containing Al such as AlN substrate while suppressing polarity inversion, and a production method therefor. The light-emitting device includes a substrate, a first oxide film formed in contact with the substrate, a first Group III nitride layer formed in contact with the first oxide film, a second oxide film formed in contact with the first Group III nitride layer, and an n-type contact layer on the second oxide film. The substrate is an AlN substrate or AlGaN substrate. The first oxide film contains Al atoms, N atoms, and O atoms. The first Group III nitride layer comprises AlN or AlGaN. The second oxide film contains Al atoms, N atoms, and O atoms.

Abstract: To provide a method for producing a Group III nitride semiconductor light-emitting device using a substrate containing Al such as AlN substrate while suppressing polarity inversion. The production method comprising an oxide film formation step, a first Group III nitride layer formation step, a first semiconductor layer formation step, a light-emitting layer formation step, and a second semiconductor layer formation step. In the production method, an AlN substrate or AlGaN substrate is employed. In the oxide film formation step, an oxide film containing Al atoms, N atoms, and O atoms is formed. In the first Group III nitride layer formation step, an AlN layer or AlGaN layer is formed as the first Group III nitride layer under the condition that the substrate temperature 1200° C. to 1450° C.

Abstract: A light-emitting element includes an n-type semiconductor layer mainly including AlxGa1-XN (0.5?x?1), a p-type semiconductor layer, a light-emitting layer sandwiched between the n-type semiconductor layer and the p-type semiconductor layer, an n-electrode connected to the n-type semiconductor layer, and a plurality of p-electrodes that are connected to the p-type semiconductor layer and are arranged in a dot pattern. An area of the n-electrode is not less than 25% and not more than 50% of a chip area.

Abstract: A method of manufacturing a light emitting element includes forming an n-type semiconductor layer that includes an n-type clad layer and AlxGa1-xN (0.1?x?1) as a main component, forming an n-side contact electrode that includes a laminate structure including a Ti layer and a Ru layer, the Ti layer being in contact with the n-type semiconductor layer, and forming an ohmic contact of the n-type semiconductor layer and the Ti layer by a heat treatment.

Abstract: A method of manufacturing a light-emitting device includes forming by sputtering a nucleation layer mainly including AlN on a surface of a patterned substrate including a concave-convex pattern, after forming the nucleation layer, performing a heat treatment at a temperature of not less than 1150° C., after the heat treatment, forming an AlGaN underlayer on the surface of the patterned substrate with the nucleation layer formed thereon, the AlGaN underlayer mainly including AlxGa1?xN (0.04?x?1) and a flat surface, and epitaxially growing a group III nitride semiconductor on the AlGaN underlayer so as to form a light-emitting function portion including a light-emitting layer.

Abstract: A method for producing a Group III nitride semiconductor light-emitting device includes an n-type layer, a light-emitting layer, and a p-type layer, each of the layers being formed of Group III nitride semiconductor, being sequentially deposited via a buffer layer on a textured sapphire substrate. A buried layer is formed of Group III nitride semiconductor on the buffer layer, at a temperature lower by 20° C. to 80° C. than the temperature of 1000° C. to 1200° C. when the n-type layer is deposited on the buried layer. The texture provided on the sapphire substrate may have a depth of 1 ?m to 2 ?m and a side surface inclined by 40° to 80°. A preventing layer may be formed of GaN at 600° C. to 1050° C. so as to cover the entire top surface of the buffer layer.

Abstract: A method for producing a Group III nitride semiconductor light-emitting device includes an n-type layer, a light-emitting layer, and a p-type layer, each of the layers being formed of Group III nitride semiconductor, being sequentially deposited via a buffer layer on a textured sapphire substrate. A buried layer is formed of Group III nitride semiconductor on the buffer layer, at a temperature lower by 20° C. to 80° C. than the temperature of 1000° C. to 1200° C. when the n-type layer is deposited on the buried layer. The texture provided on the sapphire substrate may have a depth of 1 ?m to 2 ?m and a side surface inclined by 40° to 80°. A preventing layer may be formed of GaN at 600° C. to 1050° C. so as to cover the entire top surface of the buffer layer.

Abstract: A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.

Abstract: Metal cell tanks including secondary cells respectively are connected to one another by connection members. For example, a connection member has: an insulation portion interposed between adjacent cell tanks for keeping the cell tanks electrically insulated from each other; an one-end holding portion extending from one end of the insulation portion for holding one end portion of one of the adjacent cell tanks; and an opposite-end holding portion extending from the other end of the insulation portion for holding the other end portion of the other of the adjacent cell tanks.

Abstract: A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.

Abstract: Metal cell tanks including secondary cells respectively are connected to one another by connection members. For example, a connection member has: an insulation portion interposed between adjacent cell tanks for keeping the cell tanks electrically insulated from each other; an one-end holding portion extending from one end of the insulation portion for holding one end portion of one of the adjacent cell tanks; and an opposite-end holding portion extending from the other end of the insulation portion for holding the other end portion of the other of the adjacent cell tanks.