Abstract: According to one embodiment, a semiconductor manufacturing apparatus includes a chamber, a substrate support part, a gas supply part, an exhaust port, and a flow rate adjustment part. The gas supply part is configured to supply a gas into a process space above the substrate. The exhaust port is configured to exhaust a gas, which is present inside the chamber, from the chamber. The flow rate adjustment part is provided inside the chamber. The flow rate adjustment part is configured to adjust a flow rate of a gas flowing from the process space to the exhaust port. The flow rate adjustment part is configured to adjust a gas flow rate in two or more different directions in parallel with a surface of the substrate. Amounts of adjustment of the flow rate in each of the directions are different.