Abstract: A vibration measurement device is mountable on a transport vehicle. The device includes a vibration measurer that measures vibration, a position information obtainer that obtains position information indicating a position of the transport vehicle, a state information obtainer that obtains vehicle state information indicating a state of the transport vehicle, a recorder that records a measurement result from the vibration measurer, the vehicle state information, and the position information in an associated manner, and an output unit that outputs information recorded in the recorder.

Abstract: An information display device includes a recording device that records transport vehicle travel data including position information about a transport vehicle and vibration information about the transport vehicle in an associated manner and path map data of a map of a travel path of the transport vehicle. The information display device includes a control device that displays the path map data on a first display area, displays a transport vehicle mark indicating a position of the transport vehicle at a target display time point on the map displayed on the first display area, displays a vibration result graph showing the vibration information at and around the target display time point on a second display area, and displays a position mark indicating a position on the vibration result graph corresponding to the target display time point on the second display area.

Abstract: An imaging device according to an embodiment of the present disclosure includes: a first substrate including a sensor pixel that performs photoelectric conversion; a second substrate including a pixel circuit that outputs a pixel signal on a basis of electric charges outputted from the sensor pixel; and a third substrate including a processing circuit that performs signal processing on the pixel signal. The first substrate, the second substrate, and the third substrate are stacked in this order, and a low-permittivity region is provided in at least any region around a circuit that reads electric charges from the sensor pixel and outputs the pixel signal.

Abstract: An imaging device according to an embodiment of the present disclosure includes: a first substrate including a sensor pixel that performs photoelectric conversion; a second substrate including a pixel circuit that outputs a pixel signal on a basis of electric charges outputted from the sensor pixel; and a third substrate including a processing circuit that performs signal processing on the pixel signal. The first substrate, the second substrate, and the third substrate are stacked in this order, and a low-permittivity region is provided in at least any region around a circuit that reads electric charges from the sensor pixel and outputs the pixel signal.

Abstract: A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.

Abstract: A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.

Abstract: A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.

Abstract: A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.