Patents by Inventor Daisuke TOMIDA

Daisuke TOMIDA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Flow passage switching valve, flow passage switching valve system, and liquid chromatograph
    Patent number: 12247959
    Abstract: A flowpath switch valve is configured for extended service life by spreading the region, of the sliding surfaces of a stator and a rotor, that is subject to wear over the entirety of the sliding surfaces. The stator has fixed stator flowpaths, and the rotor has rotor flowpaths. A flowpath switch valve, depending on the rotor rotation state, realizes connection patterns that include: a first connection pattern wherein a rotor flowpath 241 connects a fixed stator flowpath 31 and a fixed stator flowpath 32; a second connection pattern wherein the rotor flowpath 241 connects the fixed stator flowpath 31 and a fixed stator flowpath 36; a third connection pattern wherein a rotor flowpath 242 connects the fixed stator flowpath 31 and the fixed stator flowpath 32; and a fourth connection pattern wherein the rotor flowpath 242 connects the fixed stator flowpath 31 and the fixed stator flowpath 36.
    Type: Grant
    Filed: September 10, 2020
    Date of Patent: March 11, 2025
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Ayano Otsubo, Nobuhiro Tsukada, Hisao Inami, Shoji Tomida, Mitsuhiko Ueda, Daisuke Akieda, Kenichiro Nishiki
  • Method for producing nitride single crystal using nitrogen-containing solvent, mineralizer having fluorine atom, and raw material
    Patent number: 10501865
    Abstract: A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: December 10, 2019
    Assignees: Mitsubishi Chemical Corporation, Tohoku University, The Japan Steel Works, Ltd.
    Inventors: Tohru Ishiguro, Quanxi Bao, Chiaki Yokoyama, Daisuke Tomida, Shigefusa Chichibu, Rinzo Kayano, Mutsuo Ueda, Makoto Saito, Yuji Kagamitani
  • METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL
    Publication number: 20180187328
    Abstract: A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.
    Type: Application
    Filed: March 1, 2018
    Publication date: July 5, 2018
    Applicants: Mitsubishi Chemical Corporation, Tohoku University, The Japan Steel Works, Ltd.
    Inventors: Tohru Ishiguro, Quanxi Bao, Chiaki Yokoyama, Daisuke Tomida, Shigefusa Chichibu, Rinzo Kayano, Mutsuo Ueda, Makoto Saito, Yuji Kagamitani
  • Method for producing nitride single crystal
    Patent number: 9976229
    Abstract: A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.
    Type: Grant
    Filed: September 29, 2014
    Date of Patent: May 22, 2018
    Assignees: MITSUBISHI CHEMICAL CORPORATION, TOHOKU UNIVERSITY, THE JAPAN STEEL WORKS, LTD.
    Inventors: Tohru Ishiguro, Quanxi Bao, Chiaki Yokoyama, Daisuke Tomida, Shigefusa Chichibu, Rinzo Kayano, Mutsuo Ueda, Makoto Saito, Yuji Kagamitani
  • METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL
    Publication number: 20150023862
    Abstract: A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.
    Type: Application
    Filed: September 29, 2014
    Publication date: January 22, 2015
    Applicants: Mitsubishi Chemical Corporation, Tohoku University, The Japan Steel Works, Ltd.
    Inventors: Toru ISHIGURO, Quanxi BAO, Chiaki YOKOYAMA, Daisuke TOMIDA, Shigefusa CHICHIBU, Rinzo KAYANO, Mutsuo UEDA, Makoto SAITO, Yuji KAGAMITANI