Patents by Inventor Daisuke Totsuka

Daisuke Totsuka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9869777
    Abstract: Provided is a scintillator having a crystal containing CsI (cesium iodide) as a host material thereof and thallium (Tl) and bismuth (Bi), and a novel scintillator which maintains a high output and simultaneously can further enhance the afterglow characteristics. There is proposed a scintillator having a crystal containing CsI (cesium iodide) as a host material thereof and Tl, Bi and O, wherein the concentration a of Bi with respect to Cs in the crystal is 0.001 atomic ppm?a?5 atomic ppm; and the ratio (a/b) of the concentration a of Bi with respect to Cs in the crystal to the concentration b of O with respect to I in the crystal is 0.005×10?4 to 200×10?4.
    Type: Grant
    Filed: March 18, 2016
    Date of Patent: January 16, 2018
    Assignee: Nihon Kessho Kogaku Co., Ltd.
    Inventor: Daisuke Totsuka
  • Patent number: 9678223
    Abstract: An afterglow property of cesium iodide:thallium (CsI:Tl), in which CsI is a host material and doped with thallium, is improved. It is possible to improve the afterglow property of a scintillator by doping a crystal material including CsI (cesium iodide), as a host material, and thallium (Tl), as a luminescent center, with bismuth (Bi).
    Type: Grant
    Filed: August 17, 2012
    Date of Patent: June 13, 2017
    Assignee: NIHON KESSHO KOGAKU., LTD.
    Inventors: Daisuke Totsuka, Susumu Matsumoto, Akira Yoshikawa, Takayuki Yanagida
  • Publication number: 20170160407
    Abstract: Provided is a scintillator having a crystal containing CsI (cesium iodide) as a host material thereof and thallium (Tl) and bismuth (Bi), and a novel scintillator which maintains a high output and simultaneously can further enhance the afterglow characteristics. There is proposed a scintillator having a crystal containing CsI (cesium iodide) as a host material thereof and Tl, Bi and O, wherein the concentration a of Bi with respect to Cs in the crystal is 0.001 atomic ppm?a?5 atomic ppm; and the ratio (a/b) of the concentration a of Bi with respect to Cs in the crystal to the concentration b of O with respect to I in the crystal is 0.005×10?4 to 200×10?4.
    Type: Application
    Filed: March 18, 2016
    Publication date: June 8, 2017
    Inventor: Daisuke Totsuka
  • Publication number: 20140203211
    Abstract: An afterglow property of cesium iodide: thallium (CsI:Tl), in which CsI is a host material and doped with thallium, is improved. It is possible to improve the afterglow property of a scintillator by doping a crystal material including CsI (cesium iodide), as a host material, and thallium (Tl), as a luminescent center, with bismuth (Bi).
    Type: Application
    Filed: August 17, 2012
    Publication date: July 24, 2014
    Applicants: NIHON KESSHO KOGAKU CO., LTD., TOHOKU UNIVERSITY
    Inventors: Daisuke Totsuka, Susumu Matsumoto, Akira Yoshikawa, Takayuki Yanagida