Abstract: An electric injection molding machine includes an injection apparatus including a screw configured to inject a resin, a driving direction conversion part configured to move the injection apparatus forward and backward in an axial direction of the screw, and a first motor coaxially connected to a rotation shaft of the driving direction conversion part, the first motor being configured to drive the driving direction conversion part. The first motor includes a motor connection part, the motor connection part being configured to connect a second motor to the first motor coaxially with the driving direction conversion part on a side of the first motor opposite to a side thereof on which the driving direction conversion part is connected thereto, the second motor being configured to drive the driving direction conversion part in an interlocking manner with the first motor.

Abstract: An electric injection molding machine includes an injection apparatus including a screw configured to inject a resin, a driving direction conversion part configured to move the injection apparatus forward and backward in an axial direction of the screw, and a first motor coaxially connected to a rotation shaft of the driving direction conversion part, the first motor being configured to drive the driving direction conversion part. The first motor includes a motor connection part, the motor connection part being configured to connect a second motor to the first motor coaxially with the driving direction conversion part on a side of the first motor opposite to a side thereof on which the driving direction conversion part is connected thereto, the second motor being configured to drive the driving direction conversion part in an interlocking manner with the first motor.

Abstract: A photoelectric converter is disclosed. The photoelectric converter includes an electrode layer and a semiconductor layer. The semiconductor layer is on the electrode layer. The semiconductor layer contains a chalcopyrite compound semiconductor. The semiconductor layer comprises a plurality of sub-layers. The plurality of sub-layers comprises a first sub-layer. The first sub-layer is located closest to the electrode layer. The first sub-layer has a first thickness smaller than an average thickness of the rest of the plurality of sub-layers.

Abstract: [Problem] In the case of further stacking a window layer or the like on a buffer layer, the buffer layer and the light absorption layer are likely to be damaged during the formation of the window layer due to inferior moisture resistance and plasma resistance, and photoelectric conversion elements sometimes fail to achieve any satisfactory conversion efficiency in terms of reliability. [Solving Means] Provided is a photoelectric conversion element including: a light absorption layer containing a I-B group element, a III-B group element, and a VI-B group element, which is provided on a lower electrode layer; a first semiconductor layer containing a III-B group element and a VI-B group element, which is provided on the light absorption layer; and a second semiconductor layer containing an oxide of a II-B group element, which is provided on the first semiconductor layer, wherein the light absorption layer comprises a doped layer region containing the II-B group element, on the first semiconductor layer side.