Abstract: A display unit includes a plurality of pixels, a reflector layer, and an auxiliary electrode. Each of the plurality of pixels has a first electrode, an organic layer, and a second electrode in this order. The organic layer and the second electrode are provided on the first electrode. The organic layer includes a light-emitting layer. The reflector layer has a light-reflecting surface around each of the pixels. The auxiliary electrode is provided on the reflector layer and is projected from an upper end of the light-reflecting surface. The auxiliary electrode has a portion which is exposed from the organic layer, and the exposed portion is covered with the second electrode.

Abstract: A sewing machine includes a threading mechanism, a holding member, and a movement mechanism. The threading mechanism is configured to move a hook between a standby position and an operative position. The holding member includes a cutting blade and a clamping portion. The cutting blade is configured to cut an upper thread. The clamping portion is configured to clamp and hold a thread end of the cut upper thread. The movement mechanism is configured to move the holding member to a first position and a second position. The first direction is a direction from the standby position to the operative position. The second position is a position on a second direction side with respect to the first position. The second direction is a direction opposite to the first direction.

Abstract: An embroidery frame includes a pair of a first frame and a second frame configured to clamp a sewing object and a lock mechanism. The lock mechanism includes a support member configured to rotatably support the second frame such that a posture of the second frame with respect to the first frame to clamp the sewing object is switchable to a first posture and a second posture. The first posture is a posture in which a first surface of the second frame faces the first frame. The second posture is a posture in which a second surface of the second frame faces the first frame. The second surface is on the opposite side to the first surface. The lock mechanism is configured to press the second frame in at least the first posture toward a first frame side with respect to the second frame.

Abstract: A sewing machine includes a drive shaft rotated by a motor, a cam member fixed to the drive shaft and including a first cam and a second cam, a forked member including a main body member and an auxiliary member, an urging device, and a presser mechanism. At least one of a first cam surface of the first cam and a second cam surface of the second cam is inclined with respect to the drive shaft. The main body member and the auxiliary member are disposed to face each other such that the cam member is clamped between them. The urging device urges the main body member and the auxiliary member in a direction to clamp the cam member. The presser mechanism drives a presser member to hold a cloth, by swinging of the forked member caused by the rotation of the cam member.

Abstract: A display unit includes a plurality of pixels, a reflector layer, and an auxiliary electrode. Each of the plurality of pixels has a first electrode, an organic layer, and a second electrode in this order. The organic layer and the second electrode are provided on the first electrode. The organic layer includes a light-emitting layer. The reflector layer has a light-reflecting surface around each of the pixels. The auxiliary electrode is provided on the reflector layer and is projected from an upper end of the light-reflecting surface. The auxiliary electrode has a portion which is exposed from the organic layer, and the exposed portion is covered with the second electrode.

Abstract: The present invention discloses an electronic device formed of a group III nitride. In one embodiment, a substrate is fabricated by the ammonothermal method and a drift layer is fabricated by hydride vapor phase epitaxy. After etching a trench, p-type contact pads are made by pulsed laser deposition followed by n-type contact pads by pulsed laser deposition. The bandgap of the p-type contact pad is designed larger than that of the drift layer. Upon forward bias between p-type contact pads (gate) and n-type contact pads (source), holes and electrons are injected into the drift layer from the p-type contact pads and n-type contact pads. Injected electrons drift to the backside of the substrate (drain).

Abstract: A display unit includes a plurality of pixels, a reflector layer, and an auxiliary electrode. Each of the plurality of pixels has a first electrode, an organic layer, and a second electrode in this order. The organic layer and the second electrode are provided on the first electrode. The organic layer includes a light-emitting layer. The reflector layer has a light-reflecting surface around each of the pixels. The auxiliary electrode is provided on the reflector layer and is projected from an upper end of the light-reflecting surface. The auxiliary electrode has a portion which is exposed from the organic layer, and the exposed portion is covered with the second electrode.

Abstract: [Object] To make it possible to improve viewing angle characteristics more. [Solution] Provided is a display device including: a plurality of light emitting sections formed on a substrate. The light emitting section has a configuration in which a luminescence layer is sandwiched by a first electrode functioning as a reflecting electrode and a second electrode in a stacking direction, a surface of the first electrode facing the luminescence layer is inclined from a plane perpendicular to the stacking direction in at least a partial region in a display surface, and an inclination direction of the first electrode has a distribution in the display surface.

Abstract: [Object] To make it possible to improve viewing angle characteristics more. [Solution] Provided is a display device including: a plurality of light emitting sections formed on a substrate; and a color filter provided on the light emitting section to correspond to each of the plurality of light emitting sections. The light emitting sections and the color filters are arranged such that, in at least a partial region in a display surface, a relative misalignment between a center of a luminescence surface of the light emitting section and a center of the color filter corresponding to the light emitting section is created in a plane perpendicular to a stacking direction.

Abstract: An imaging device includes a semiconductor substrate comprising a first semiconductor; and a unit pixel cell provided to the semiconductor substrate. The unit pixel cell includes: a photoelectric converter that includes a pixel electrode and a photoelectric conversion layer, the photoelectric converter converting incident light into electric charges; a charge detection transistor that includes a part of the semiconductor substrate and detects the electric charges; and a reset transistor that includes at least a part of a first semiconductor layer comprising a second semiconductor and initializes a voltage of the photoelectric converter. The pixel electrode is located above the charge detection transistor. The reset transistor is located between the charge detection transistor and the pixel electrode. A band gap of the second semiconductor is larger than a band gap of the first semiconductor.

Abstract: The present invention discloses an electronic device formed of a group III nitride. In one embodiment, a substrate is fabricated by the ammonothermal method and a drift layer is fabricated by hydride vapor phase epitaxy. After etching a trench, p-type contact pads are made by pulsed laser deposition followed by n-type contact pads by pulsed laser deposition. The bandgap of the p-type contact pad is designed larger than that of the drift layer. Upon forward bias between p-type contact pads (gate) and n-type contact pads (source), holes and electrons are injected into the drift layer from the p-type contact pads and n-type contact pads. Injected electrons drift to the backside of the substrate (drain).

Abstract: The present invention discloses an electronic device formed of a group III nitride. In one embodiment, a substrate is fabricated by the ammonothermal method and a drift layer is fabricated by hydride vapor phase epitaxy. After etching a trench, p-type contact pads are made by pulsed laser deposition followed by n-type contact pads by pulsed laser deposition. The bandgap of the p-type contact pad is designed larger than that of the drift layer. Upon forward bias between p-type contact pads (gate) and n-type contact pads (source), holes and electrons are injected into the drift layer from the p-type contact pads and n-type contact pads. Injected electrons drift to the backside of the substrate (drain).

Abstract: The present invention discloses an electronic device formed of a group III nitride. In one embodiment, a substrate is fabricated by the ammonothermal method and a drift layer is fabricated by hydride vapor phase epitaxy. After etching a trench, p-type contact pads are made by pulsed laser deposition followed by n-type contact pads by pulsed laser deposition. The bandgap of the p-type contact pad is designed larger than that of the drift layer. Upon forward bias between p-type contact pads (gate) and n-type contact pads (source), holes and electrons are injected into the drift layer from the p-type contact pads and n-type contact pads. Injected electrons drift to the backside of the substrate (drain).

Abstract: An embroidery frame includes a pair of a first frame and a second frame configured to clamp a sewing object and a lock mechanism. The lock mechanism includes a support member configured to rotatably support the second frame such that a posture of the second frame with respect to the first frame to clamp the sewing object is switchable to a first posture and a second posture. The first posture is a posture in which a first surface of the second frame faces the first frame. The second posture is a posture in which a second surface of the second frame faces the first frame. The second surface is on the opposite side to the first surface. The lock mechanism is configured to press the second frame in at least the first posture toward a first frame side with respect to the second frame.

Abstract: An embroidery frame includes a pair of a first frame and a second frame configured to clamp a sewing object, and a lock mechanism. The lock mechanism is configured to switch a position of the second frame with respect to the first frame to at least three positions including a first position, a second position and a third position. The first position is a position in which the second frame is closed with respect to the first frame. The second position is a position in which, with respect to the first frame, the second frame is more open, by a first predetermined amount, than in the first position. The third position is a position in which, with respect to the first frame, the second frame is open by a second predetermined amount. The second predetermined amount is larger than the first predetermined amount.

Abstract: A sewing machine includes a needle bar, a needle bar release mechanism, a drive portion, a contact member, and a switching mechanism. The needle bar is configured to move up and down. The needle bar release mechanism is configured to connect and disconnect the transmission of the driving force between the drive shaft and the needle bar. The drive portion is configured to drive the needle bar release mechanism. The contact member is configured to come into contact with the needle bar in a case where the needle bar is positioned at a top dead point of the range within which the needle bar is able to move up and down. The switching mechanism is configured to switch the position of the contact member between a first position and a second position.

Abstract: The present invention discloses an electronic device formed of a group III nitride. In one embodiment, a substrate is fabricated by the ammonothermal method and a drift layer is fabricated by hydride vapor phase epitaxy. After etching a trench, p-type contact pads are made by pulsed laser deposition followed by n-type contact pads by pulsed laser deposition. The bandgap of the p-type contact pad is designed larger than that of the drift layer. Upon forward bias between p-type contact pads (gate) and n-type contact pads (source), holes and electrons are injected into the drift layer from the p-type contact pads and n-type contact pads. Injected electrons drift to the backside of the substrate (drain).

Abstract: The present invention discloses an electronic device formed of a group III nitride. In one embodiment, a substrate is fabricated by the ammonothermal method and a drift layer is fabricated by hydride vapor phase epitaxy. After etching a trench, p-type contact pads are made by pulsed laser deposition followed by n-type contact pads by pulsed laser deposition. The bandgap of the p-type contact pad is designed larger than that of the drift layer. Upon forward bias between p-type contact pads (gate) and n-type contact pads (source), holes and electrons are injected into the drift layer from the p-type contact pads and n-type contact pads. Injected electrons drift to the backside of the substrate (drain).

Abstract: The present invention discloses an electronic device formed of a group III nitride. In one embodiment, a substrate is fabricated by the ammonothermal method and a drift layer is fabricated by hydride vapor phase epitaxy. After etching a trench, p-type contact pads are made by pulsed laser deposition followed by n-type contact pads by pulsed laser deposition. The bandgap of the p-type contact pad is designed larger than that of the drift layer. Upon forward bias between p-type contact pads (gate) and n-type contact pads (source), holes and electrons are injected into the drift layer from the p-type contact pads and n-type contact pads. Injected electrons drift to the backside of the substrate (drain).

Abstract: The present invention discloses an electronic device formed of a group III nitride. In one embodiment, a substrate is fabricated by the ammonothermal method and a drift layer is fabricated by hydride vapor phase epitaxy. After etching a trench, p-type contact pads are made by pulsed laser deposition followed by n-type contact pads by pulsed laser deposition. The bandgap of the p-type contact pad is designed larger than that of the drift layer. Upon forward bias between p-type contact pads (gate) and n-type contact pads (source), holes and electrons are injected into the drift layer from the p-type contact pads and n-type contact pads. Injected electrons drift to the backside of the substrate (drain).