Abstract: The present disclosure provides a plasma processing apparatus comprising: a plasma processing chamber; a substrate support; an electrode or an antenna; a radio frequency power supply; a power receiving coil electrically connected to the at least one power-consuming member; a power transmitting coil electromagnetically inductively coupled with the power receiving coil; a power transmitting unit electrically connected to the power transmitting coil to supply a power to the power transmitting coil; and a controller. The power transmitting unit includes a voltage detector and a current detector, and the controller is configured to determine a required power level corresponding to a parameter value including an input impedance obtained from the input voltage and the input current or a load resistance value of the at least one power-consuming member, and to control the power transmitting unit to output an output power having the required power level.

Abstract: A plasma processing apparatus comprises a plasma processing chamber, a substrate support, a high frequency power supply, an electrode or an antenna, a power consuming member, an electricity storage unit, a power transmitting coil, a power receiving coil and at least one driving system. The power transmitting coil is provided outside the plasma processing chamber. The power receiving coil is electrically connected to the electricity storage unit and capable of receiving power from the power transmitting coil by electromagnetic induction coupling. The at least one driving system is configured to change a distance between the power transmitting coil and the power receiving coil by moving at least one of the power transmitting coil and the power receiving coil.

Abstract: A plasma processing apparatus comprises a plasma processing chamber, a substrate support, an electrode or an antenna, a high frequency power supply, a consuming member, an electricity storage unit and a power receiving coil. The electrode or an antenna is disposed such that a space within the plasma processing chamber is located between the electrode or the antenna and the substrate support. The high frequency power supply is configured to generate high frequency power and is electrically connected to the substrate support, the electrode or the antenna. The power consuming member is disposed within the plasma processing chamber or the substrate support. The electricity storage unit is electrically connected to the power consuming member. The power receiving coil is electrically connected to the electricity storage unit and capable of receiving power from a power transmitting coil by electromagnetic induction coupling.

Abstract: A plasma processing apparatus comprises a plasma processing chamber, a substrate support, a high frequency power supply, an electrode or an antenna, a power consuming member, a ground frame, an electricity storage unit, a rectifying and smoothing unit, a power feeding output connector, and a power receiving coil. The rectifying and smoothing unit includes a power feeding input connector comprising a first power feeding input terminal and a second power feeding input terminal, and a rectifying circuit comprising a diode bridge. The power feeding output connector comprises a first feeding output terminal and a second power feeding output terminal which are electrically connectable to the first power feeding input terminal and the second power feeding input terminal. The power receiving coil is electrically connected to the power feeding output connector, and capable of receiving power from a power transmitting coil by electromagnetic induction coupling.

Abstract: Provided is a plasma processing apparatus comprising: a plasma processing chamber; a substrate support; a high frequency power supply; an electrode or an antenna electrically connected to the high frequency power supply; a power consuming member disposed within the plasma processing chamber or the substrate support; an electricity storage unit electrically connected to the power consuming member; a power transmitting coil provided outside the plasma processing chamber; a power receiving coil electrically connected to the electricity storage unit and capable of receiving power from the power transmitting coil; at least one metal case that provides a shielded space and accommodates the power transmitting coil and the power receiving coil within the shielded space; and at least one ferrite material that is disposed within the shielded space and is provided to close a space in which the power transmitting coil and the power receiving coil are disposed.

Abstract: A plasma processing apparatus comprises a first plasma processing apparatus and a second plasma processing apparatus. Each of the first plasma processing apparatus and the second plasma processing apparatus comprises a plasma processing chamber, a substrate support, a high frequency power supply, an electrode or an antenna, a power consuming member, a ground frame, an electricity storage unit, a power receiving coil and a rectifying and smoothing unit. The ground frame is grounded and surrounding the substrate support together with the plasma processing chamber. Each of the first plasma processing apparatus and the second plasma processing apparatus is configured such that, with respect to the power consuming member thereof, the electricity storage unit thereof and the electricity storage unit of a remaining one of the first plasma processing apparatus and the second plasma processing apparatus are connectable in parallel.

Abstract: Provided is a plasma processing method performed with a plasma processing apparatus including a chamber. This method includes: (a) preparing a substrate on a substrate support in the chamber, the substrate including an etching target film and a metal-containing film provided on the etching target film, the metal-containing film including an exposed first region and an unexposed second region; (b) reforming the metal-containing film using a first plasma formed from a first processing gas, the first processing gas including either a fluorine-containing gas or an oxygen-containing gas; and (c) selectively removing the first region of the reformed metal-containing film with respect to the second region using a second plasma formed from a second processing gas.

Abstract: An article for use in a plasma processing apparatus includes a gas supply pipe, and a component disposed in the gas supply pipe. The component is configured to cause radicals of gas passing through the gas supply pipe to be deactivated in the component.

Abstract: A film forming method of forming a predetermined film on a substrate by PEALD includes: adsorbing a precursor on the substrate; and forming plasma from a modifying gas and modifying the precursor adsorbed on the substrate with radicals contained in the plasma. Here, the modifying of the precursor includes supplying a radio frequency power having an effective power smaller than 500 W to a plasma source configured to form the plasma from the modifying gas.

Abstract: A film forming apparatus configured to form a predetermined film on a substrate by PEALD includes a processing container configured to airtightly accommodate the substrate; and a placing table on which the substrate is placed within the processing container. The processing container includes an exhaust opening through which an inside of the processing container is exhausted; an exhaust path configured to connect the exhaust opening and a processing space above the placing table within the processing container; and a partition wall configured to separate a processing space side from an exhaust opening side in the exhaust path. The partition wall includes a flow path configured to connect the processing space side and the exhaust opening side, and the partition wall is formed such that the exhaust opening side is not seen from the processing space side when an extension direction of the exhaust path is viewed from a top.

Abstract: An article for use in a plasma processing apparatus includes a gas supply pipe, and a component disposed in the gas supply pipe. The component is configured to cause radicals of gas passing through the gas supply pipe to be deactivated in the component.