Patents by Inventor Daisy Liu

Daisy Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9373784
    Abstract: A semiconductor memory device includes a first insulating portion. The semiconductor memory device further includes a phase-change material element that contacts the first insulating portion. The semiconductor memory device further includes an electrode that contacts a side surface of the phase-change material element, the side surface of the phase-change material element being not parallel to a top surface of the electrode. The semiconductor memory device further includes a second insulating portion surrounding the phase-change material element.
    Type: Grant
    Filed: March 26, 2015
    Date of Patent: June 21, 2016
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
    Inventors: Jia Xu, GuanPing Wu, Chao Zhang, Daisy Liu
  • Publication number: 20150200359
    Abstract: A semiconductor memory device includes a first insulating portion. The semiconductor memory device further includes a phase-change material element that contacts the first insulating portion. The semiconductor memory device further includes an electrode that contacts a side surface of the phase-change material element, the side surface of the phase-change material element being not parallel to a top surface of the electrode. The semiconductor memory device further includes a second insulating portion surrounding the phase-change material element.
    Type: Application
    Filed: March 26, 2015
    Publication date: July 16, 2015
    Inventors: Jia XU, GuanPing WU, Chao ZHANG, Daisy LIU
  • Patent number: 9023710
    Abstract: A semiconductor memory device includes a first insulating portion. The semiconductor memory device further includes a phase-change material element that contacts the first insulating portion. The semiconductor memory device further includes an electrode that contacts a side surface of the phase-change material element, the side surface of the phase-change material element being not parallel to a top surface of the electrode. The semiconductor memory device further includes a second insulating portion surrounding the phase-change material element.
    Type: Grant
    Filed: November 13, 2012
    Date of Patent: May 5, 2015
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Jia Xu, GuanPing Wu, Chao Zhang, Daisy Liu
  • Patent number: 8912039
    Abstract: A device that may be used for a phase change random access memory in a semiconductor device and a manufacturing method thereof are provided. The device includes a phase change unit and two sidewall electrodes respectively located on two opposite sidewalls of the phase change unit. The phase change unit includes a three layer structure, in which a phase change material layer is positioned between a top insulating material layer and a bottom insulating material layer. The first sidewall electrode and the second sidewall electrode are in contact with two opposite end faces of the phase change material layer. The contact area between electrode and phase change material is reduced, thereby obtaining a relatively small drive current and meeting a demand that the integrated level of such a device is increasingly enhanced.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: December 16, 2014
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Jia Xu, GuanPing Wu, Daisy Liu, Johnny Ren