Abstract: The present invention relates to a scanner provided with a vibratory beam on or in which is formed a phased array intended to extract according to either one of two parallel faces of the beam a light radiation that could be emitted by a light source.

Abstract: A scanner is provided with a plurality of elementary scanners each able to scan a different surface by means of a light beam. Each elementary scanner comprises a beam, for example a vibrating beam, on or in which a phase-controlled array is formed, intended to extract, at a face of the beam, a light beam able to be emitted by a light source. At least one beam of one of the elementary scanners, referred to as the first scanner, has, at rest, a deflection different from that of the beams of the other elementary scanners. This arrangement enables the first scanner to scan a surface, referred to the first surface, different from that scanned by the other elementary scanners. The optical scanner according to the present invention makes it possible to cover a relatively large surface while keeping appreciable compactness.

Abstract: An optoelectronic emitter with a phased array antenna on a photonic chip includes a power splitter, an array of phase shifters and elementary emitters, and an integrated control device. The integrated control device includes an interferometric focusing lens, the entrance and exit faces of which are curved and define a free propagation region with a homogeneous refractive index. Input waveguides are connected to the entrance face orthogonal thereto and have an effective index for the guided modes adapted such that the optical paths of the input waveguides are identical to each other.

Abstract: The invention relates to a device for coupling a flared laser source (10) and an output waveguide (3), comprising a coupler (20), a combiner (40), and a network of intermediate waveguides (30) located between the coupler and the combiner and comprising a correcting central section (Sc) in which an effective index associated with the guided modes is adjusted so that the optical paths of the intermediate waveguides (30) between the coupler (20) and the combiner (40) are identical to one another.

Abstract: The invention relates to a photonic circuit for attenuating the amplitude of an optical signal, comprising a Mach-Zehnder interferometer for coupling an input waveguide (14) and an output waveguide (15), said interferometer comprising a modulation section (SM1) which includes a first waveguide (11), a second waveguide (12) and a phase shifter (13) configured to introduce a phase difference between a first optical signal circulating on the first waveguide and a second optical signal circulating on the second waveguide. The first and second waveguides are arranged in two distinct parallel layers and the phase shifter is a thermo-optical phase shifter arranged to preferentially act on one of the first and second waveguides.

Abstract: A scanner provided with a plurality of elementary scanners, especially two elementary scanners, referred to as a first and second scanner respectively. In particular, the first scanner and the second scanner are arranged to scan, each with an optical beam, respectively, a first surface and a second surface included in the first surface and of a smaller extent than the latter.

Abstract: The present invention relates to a scanner provided with a vibratory beam on or in which is formed a phased array intended to extract according to either one of two parallel faces of the beam a light radiation that could be emitted by a light source.

Abstract: The present invention relates to a scanner provided with a plurality of elementary scanners each able to scan a different surface by means of a light beam. In this regard, each elementary scanner comprises a beam, for example a vibrating beam, on or in which a phase-controlled array is formed, intended to extract, at a face of the beam, a light beam able to be emitted by a light source. According to the present invention, at least one beam of one of the elementary scanners, referred to as the first scanner, has, at rest, a deflection different from that of the beams of the other elementary scanners. This arrangement enables the first scanner to scan a surface, referred to the first surface, different from that scanned by the other elementary scanners. In other words, the optical scanner according to the present invention makes it possible to cover a relatively large surface while keeping appreciable compactness.

Abstract: The invention relates to a device for coupling a flared laser source (10) and an output waveguide (3), comprising a coupler (20), a combiner (40), and a network of intermediate waveguides (30) located between the coupler and the combiner and comprising a correcting central section (Sc) in which an effective index associated with the guided modes is adjusted so that the optical paths of the intermediate waveguides (30) between the coupler (20) and the combiner (40) are identical to one another.

Abstract: A Distributed light projection device, including: one or a plurality of waveguides; and above each waveguide, a plurality of extraction cells coupled to distinct portions of the guide, each extraction cell including first and second stacked diffraction gratings.

Abstract: The invention relates to a photonic circuit for attenuating the amplitude of an optical signal, comprising a Mach-Zehnder interferometer for coupling an input waveguide (14) and an output waveguide (15), said interferometer comprising a modulation section (SM1) which includes a first waveguide (11), a second waveguide (12) and a phase shifter (13) configured to introduce a phase difference between a first optical signal circulating on the first waveguide and a second optical signal circulating on the second waveguide. The first and second waveguides are arranged in two distinct parallel layers and the phase shifter is a thermo-optical phase shifter arranged to preferentially act on one of the first and second waveguides.

Abstract: An optical coupling device for producing an optical coupling between an optical fiber and photonic circuits. The device includes a substrate and at least two coupling stages integrated on the substrate, and: each coupling stage includes a grating coupler configured to implement an optical coupling centered on a respective central wavelength; the multiple grating couplers are superimposed on top of each other, along an axis orthogonal to the substrate plane; at least one of the grating couplers is insensitive to polarization. The device can form, for example, a wide band coupler, wherein each portion of the spectrum is coupled by a coupling stage. As an alternative, such a device can form an emitting and receiving coupler, where emission and reception spectra are each coupled by a respective coupling stage.

Abstract: An optical coupling device for producing an optical coupling between an optical fiber and photonic circuits. The device includes a substrate and at least two coupling stages integrated on the substrate, and: each coupling stage includes a grating coupler configured to implement an optical coupling centered on a respective central wavelength; the multiple grating couplers are superimposed on top of each other, along an axis orthogonal to the substrate plane; at least one of the grating couplers is insensitive to polarization. The device can form, for example, a wide band coupler, wherein each portion of the spectrum is coupled by a coupling stage. As an alternative, such a device can form an emitting and receiving coupler, where emission and reception spectra are each coupled by a respective coupling stage.

Abstract: This method for manufacturing a germanium slow light waveguide includes: producing, in a silicon plate, a cavity the cross section of which, parallel to the plane of the plate, is identical to the horizontal cross section of the slow light waveguide and the bottom of which is located inside the silicon plate; then carrying out an operation of vapor phase epitaxial growth of germanium on the bottom of the cavity until this cavity is completely filled with germanium; and before implementing said epitaxial growth operation, a protective layer is deposited on an upper face of the silicon plate or, after implementing said epitaxial growth operation, the germanium that has grown on said upper face is removed.

Abstract: This method for manufacturing a germanium slow light waveguide includes: producing, in a silicon plate, a cavity the cross section of which, parallel to the plane of the plate, is identical to the horizontal cross section of the slow light waveguide and the bottom of which is located inside the silicon plate; then carrying out an operation of vapour phase epitaxial growth of germanium on the bottom of the cavity until this cavity is completely filled with germanium; and before implementing said epitaxial growth operation, a protective layer is deposited on an upper face of the silicon plate or, after implementing said epitaxial growth operation, the germanium that has grown on said upper face is removed.

Abstract: The invention relates to a method for manufacturing a waveguide (40) including a semiconducting junction (23). The method comprises the following steps: providing a support (10) comprising a semiconducting layer (20) having a first part (21) of a first conductivity type ; protecting the first part ; selectively implanting a second conductivity-type dopants in a second part (22) of the semiconducting layer (20) adjacent to the first part (21, 221). The concentration of second conductivity-type dopants in the second part (22, 222) is greater than the one of first conductivity-type dopants in the first part (21, 221).

Abstract: The invention relates to a method for manufacturing a waveguide (40) including a semiconducting junction (23). The method comprises the following steps: providing a support (10) comprising a semiconducting layer (20) having a first part (21) of a first conductivity type ; protecting the first part ; selectively implanting a second conductivity-type dopants in a second part (22) of the semiconducting layer (20) adjacent to the first part (21, 221). The concentration of second conductivity-type dopants in the second part (22, 222) is greater than the one of first conductivity-type dopants in the first part (21, 221).

Abstract: The invention relates to a photodetector for infrared light radiation having a given wavelength (?), including a stack of layers consisting of: a continuous layer (11) of a partially absorbent semiconductor material, which constitutes the photodetection area; a spacer layer (12) of a material that is transparent to said wavelength and has an index ne; and a structured metal mirror (13), the distance (g) between the top of said mirror and the semiconductor layer being less than (?)/ne and the mirror surface having a profile corresponding to the periodic repetition, according to period (P), of a basic pattern defined by the alternating series of raised surfaces (131, 132) and slots (133, 134) having the widths (L1, L2) and (L3, L4), respectively, the widths (L1) to (L4) being such that none are equal to zero, and that the sum thereof is equal to P and at least L1?L2 or L3?L4.

Abstract: The invention relates to a photodetector for infrared light radiation having a given wavelength (?), including a stack of layers consisting of: a continuous layer (11) of a partially absorbent semiconductor material, which constitutes the photodetection area; a spacer layer (12) of a material that is transparent to said wavelength and has an index ne; and a structured metal mirror (13), the distance (g) between the top of said mirror and the semiconductor layer being less than (?)/ne and the mirror surface having a profile corresponding to the periodic repetition, according to period (P), of a basic pattern defined by the alternating series of raised surfaces (131, 132) and slots (133, 134) having the widths (L1, L2) and (L3, L4), respectively, the widths (L1) to (L4) being such that none are equal to zero, and that the sum thereof is equal to P and at least L1?L2 or L3?L4.