Patents by Inventor Daiyu Kondo

Daiyu Kondo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200357718
    Abstract: In order to provide a conductive heat radiation film that can stabilize the shape, a conductive heat radiation film 30 includes: a first heated film 28 including a plurality of first metal particles 27b; and a plurality of carbon nanotubes 24 including tips 24a adhered to the first heated film 28.
    Type: Application
    Filed: April 6, 2020
    Publication date: November 12, 2020
    Applicant: FUJITSU LIMITED
    Inventors: Shinichi Hirose, Daiyu Kondo
  • Patent number: 10770370
    Abstract: An electronic device includes a component, a resin film formed to the component, and a plurality of carbon nanotubes whose end portions pass through the resin film and are in contact with the component, wherein a first portion of each of the carbon nanotubes is covered with the resin film, the first portion has a first length which is greater than a thickness of the resin film, and an intermediate portion of each of the carbon nanotubes other than the first portion is uncovered with and exposed from the resin.
    Type: Grant
    Filed: June 27, 2019
    Date of Patent: September 8, 2020
    Assignee: FUJITSU LIMITED
    Inventors: Shinichi Hirose, Daiyu Kondo
  • Publication number: 20200152817
    Abstract: A photo detection element includes: a substrate; a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers and spacer layers that are alternately stacked, light passing through each of the spacer layers, the spacer layers being made of insulating material; a first electrode that is in contact with the light-receiving layer; and a second electrode that is in contact with the light-receiving layer, a material of the second electrode being different from a material of the first electrode.
    Type: Application
    Filed: October 15, 2019
    Publication date: May 14, 2020
    Applicant: FUJITSU LIMITED
    Inventors: Shintaro SATO, Hironori Nishino, Daiyu Kondo, Kenjiro HAYASHI
  • Publication number: 20200152679
    Abstract: A photo detection element includes: a substrate; a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers that are stacked such that lattices of the graphene layers are randomly displaced from each other in plan view; a first electrode that is in contact with the light-receiving layer; and a second electrode that is in contact with the light-receiving layer, a material of the second electrode differing from a material of the first electrode.
    Type: Application
    Filed: September 30, 2019
    Publication date: May 14, 2020
    Applicant: FUJITSU LIMITED
    Inventors: Shintaro SATO, Hironori Nishino, Daiyu Kondo, Kenjiro Hayashi
  • Publication number: 20200083140
    Abstract: A heat radiation structure includes: a hexagonal boron nitride layer; and a turbostratic structure boron nitride layer provided on a first surface of the hexagonal boron nitride layer.
    Type: Application
    Filed: August 20, 2019
    Publication date: March 12, 2020
    Applicant: FUJITSU LIMITED
    Inventor: Daiyu Kondo
  • Publication number: 20200061714
    Abstract: A bonding structure includes: a plurality of carbon nanotubes; a first bonded member, and a first metal sintered compact bonding first end portions of the plurality of carbon nanotubes and the first bonded member, wherein the first metal sintered compact enters spaces between the first end portions of the plurality of carbon nanotubes, and bonds to the plurality of carbon nanotubes while covering side faces and end faces of the first end portions of the plurality of carbon nanotubes.
    Type: Application
    Filed: July 29, 2019
    Publication date: February 27, 2020
    Applicant: FUJITSU LIMITED
    Inventors: Shinichi Hirose, Daiyu Kondo
  • Patent number: 10497639
    Abstract: A carbon nanotube structure includes a plurality of carbon nanotubes, and a graphite film that binds one ends of the plurality of carbon nanotubes. And a heat dissipation sheet includes a plurality of carbon nanotube structures arranged in a sheet form, wherein each of the carbon nanotube structures includes a plurality of carbon nanotubes, and a graphite film that binds one ends of the plurality of carbon nanotubes.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: December 3, 2019
    Assignee: FUJITSU LIMITED
    Inventors: Daiyu Kondo, Shinichi Hirose
  • Publication number: 20190318980
    Abstract: The disclosed method of manufacturing an electronic device includes: placing a resin film on a component; and while heating the resin film to be softened, pressing end portions of a plurality of carbon nanotubes against the softened resin film to bring the end portions into contact with the component, and causing the softened resin film to climb up side surfaces of the carbon nanotubes.
    Type: Application
    Filed: June 27, 2019
    Publication date: October 17, 2019
    Applicant: FUJITSU LIMITED
    Inventors: Shinichi Hirose, Daiyu Kondo
  • Patent number: 10381290
    Abstract: A method of manufacturing an electronic device includes: placing a resin film on a component; and while heating the resin film to be softened, pressing end portions of a plurality of carbon nanotubes against the softened resin film to bring the end portions into contact with the component, and causing the softened resin film to climb up side surfaces of the carbon nanotubes.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: August 13, 2019
    Assignee: FUJITSU LIMITED
    Inventors: Shinichi Hirose, Daiyu Kondo
  • Publication number: 20190057926
    Abstract: A heat dissipation sheet includes a first sheet composed of a plurality of first carbon nanotubes, and a second sheet composed of a plurality of second carbon nanotubes, wherein the first sheet and the second sheet are coupled in a stacked state, and the first carbon nanotubes and the second carbon nanotubes are different in an amount of deformation when pressure is applied.
    Type: Application
    Filed: August 20, 2018
    Publication date: February 21, 2019
    Applicant: FUJITSU LIMITED
    Inventors: Shinichi Hirose, Daiyu Kondo
  • Patent number: 10079209
    Abstract: A method of manufacturing a graphene film manufactures a graphene film in good state without generating wrinkles and stresses and leaving residues of the resin. The method of manufacturing a graphene film comprises forming a catalyst metal film on a substrate; synthesizing a graphene film on the catalyst metal film; and removing the metal catalyst film in an oxidation atmosphere of an oxidizer and transferring the graphene film to the substrate.
    Type: Grant
    Filed: February 25, 2015
    Date of Patent: September 18, 2018
    Assignee: FUJITSU LIMITED
    Inventors: Daiyu Kondo, Haruhisa Nakano
  • Publication number: 20180158753
    Abstract: A heat dissipating structure includes a heat source; a heat dissipating part disposed to oppose to the heat source; a concave portion formed in at least one of opposing surfaces of the heat source and the heat dissipating part; and a heat conducting structure comprising a filler layer of thermoplastic material disposed between the heat source and the heat dissipating part and contacting with the opposing surfaces of the heat source and the heat dissipating part, and an assembly of carbon nanotubes that are distributed in the thermoplastic material, oriented perpendicularly to the surfaces of the filler layer, contacting, at both ends, with the opposing surfaces of the heat source and the heat dissipating part, and limited its distribution in the opposing surfaces by the concave portion.
    Type: Application
    Filed: November 29, 2017
    Publication date: June 7, 2018
    Applicant: FUJITSU LIMITED
    Inventors: Taisuke IWAI, Daiyu KONDO, Yoshitaka YAMAGUCHI, Shinichi HIROSE, Yukie SAKITA, Yohei YAGISHITA, Masaaki NORIMATSU
  • Publication number: 20180108594
    Abstract: A carbon nanotube structure includes a plurality of carbon nanotubes, and a graphite film that binds one ends of the plurality of carbon nanotubes. And a heat dissipation sheet includes a plurality of carbon nanotube structures arranged in a sheet form, wherein each of the carbon nanotube structures includes a plurality of carbon nanotubes, and a graphite film that binds one ends of the plurality of carbon nanotubes.
    Type: Application
    Filed: October 2, 2017
    Publication date: April 19, 2018
    Applicant: FUJITSU LIMITED
    Inventors: Daiyu Kondo, Shinichi Hirose
  • Publication number: 20180061736
    Abstract: The disclosed method of manufacturing an electronic device includes: placing a resin film on a component; and while heating the resin film to be softened, pressing end portions of a plurality of carbon nanotubes against the softened resin film to bring the end portions into contact with the component, and causing the softened resin film to climb up side surfaces of the carbon nanotubes.
    Type: Application
    Filed: July 26, 2017
    Publication date: March 1, 2018
    Applicant: FUJITSU LIMITED
    Inventors: Shinichi Hirose, Daiyu Kondo
  • Patent number: 9865699
    Abstract: A semiconductor device including a graphene layer and a method of manufacturing the same are disclosed. A method in which graphene is grown on a catalyst metal by a chemical vapor deposition or the like is known. However, the graphene cannot be used as a channel, since the graphene is in contact with the catalyst metal, which is conductive. There is disclosed a method in which a catalyst film (2) is formed over a substrate (1), a graphene layer (3) is grown originating from the catalyst film (2), an electrode (4) in contact with the graphene layer (3) is formed, and the catalyst film (2) is removed.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: January 9, 2018
    Assignee: FUJITSU LIMITED
    Inventors: Daiyu Kondo, Shintaro Sato
  • Patent number: 9576907
    Abstract: A wiring structure is made up by electrically connecting a via part made up by forming CNTs in a via hole and a wiring part made up of multilayer graphene on an interlayer insulating film via a metal block such as Cu. In the wiring structure using the CNTs at the via part and the graphene at the wiring part, it is thereby possible to obtain the wiring structure with high reliability enabling a certain electrical connection between the CNTs and the graphene with a relatively simple configuration.
    Type: Grant
    Filed: May 4, 2015
    Date of Patent: February 21, 2017
    Assignee: FUJITSU LIMITED
    Inventors: Shintaro Sato, Daiyu Kondo, Motonobu Sato, Mizuhisa Nihei
  • Patent number: 9537075
    Abstract: The graphite structure includes a plurality of domains of graphite where a layer body of graphene sheets is curved in domelike, wherein the plurality of domains are arranged in plane, and the domains adjacent each other are in contact with each other.
    Type: Grant
    Filed: November 1, 2011
    Date of Patent: January 3, 2017
    Assignee: FUJITSU LIMITED
    Inventors: Daiyu Kondo, Shintaro Sato, Taisuke Iwai
  • Publication number: 20160284813
    Abstract: A semiconductor device including a graphene layer and a method of manufacturing the same are disclosed. A method in which graphene is grown on a catalyst metal by a chemical vapor deposition or the like is known. However, the graphene cannot be used as a channel, since the graphene is in contact with the catalyst metal, which is conductive. There is disclosed a method in which a catalyst film (2) is formed over a substrate (1), a graphene layer (3) is grown originating from the catalyst film (2), an electrode (4) in contact with the graphene layer (3) is formed, and the catalyst film (2) is removed.
    Type: Application
    Filed: May 27, 2016
    Publication date: September 29, 2016
    Applicant: FUJITSU LIMITED
    Inventors: Daiyu KONDO, Shintaro SATO
  • Patent number: 9385209
    Abstract: A semiconductor device including a graphene layer and a method of manufacturing the same are disclosed. A method in which graphene is grown on a catalyst metal by a chemical vapor deposition or the like is known. However, the graphene cannot be used as a channel, since the graphene is in contact with the catalyst metal, which is conductive. There is disclosed a method in which a catalyst film (2) is formed over a substrate (1), a graphene layer (3) is grown originating from the catalyst film (2), an electrode (4) in contact with the graphene layer (3) is formed, and the catalyst film (2) is removed.
    Type: Grant
    Filed: December 8, 2014
    Date of Patent: July 5, 2016
    Assignee: FUJITSU LIMITED
    Inventors: Daiyu Kondo, Shintaro Sato
  • Patent number: 9355916
    Abstract: A method manufactures a semiconductor device which allows nanocarbon materials, such as high-quality graphene and carbon nanotube to be used. The method of manufacturing the semiconductor device comprises forming on a substrate a wiring structure including wires of nanocarbon material; forming on the wiring structure an element structure including a semiconductor element; and interconnecting the wires of the wiring structure and the semiconductor element of the element structure.
    Type: Grant
    Filed: March 25, 2015
    Date of Patent: May 31, 2016
    Assignee: FUJITSU LIMITED
    Inventors: Daiyu Kondo, Shintaro Sato, Naoki Yokoyama, Motonobu Sato