Patents by Inventor Daiziro Kudo

Daiziro Kudo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus for plasma treatment of semiconductor materials
    Patent number: 4178877
    Abstract: An improved arrangement of electrode plates, semiconductor materials, electrode supports, and electrical power supplying circuitry is useful for plasma treatment of semiconductor materials in a reaction tube in the presence of a reaction gas.
    Type: Grant
    Filed: March 13, 1978
    Date of Patent: December 18, 1979
    Assignee: Fujitsu Limited
    Inventor: Daiziro Kudo
  • Process for the vapor growth of a thin film
    Patent number: 4179326
    Abstract: Disclosed herewith is an improvement of the conventional process for the vapor growth of a thin film, such as the films of SiO.sub.2, Si.sub.3 N.sub.4, Al.sub.2 O.sub.3 and polycrystalline Si, on a plurality of wafers, such as wafers of a semiconductor, under a reduced pressure. This improved process allows the growing of a uniformly thin film on each piece of wafer. According to the present invention, the location of the wafers is changed in accordance with a specific pressure within the reaction tube.
    Type: Grant
    Filed: April 14, 1977
    Date of Patent: December 18, 1979
    Assignee: Fujitsu Limited
    Inventors: Daiziro Kudo, Kazuo Maeda, Eiki Tanikawa