Patents by Inventor Daizo Muto

Daizo Muto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11835854
    Abstract: An imprint device includes a load port for receiving a substrate to be processed, a sensor that acquires information from the substrate about a film on the substrate, and a primer forming unit configured to receive the substrate from the load port. A controller is configured to select primer process conditions corresponding to the film information. The primer forming unit receives primer process conditions from the controller and forms a primer layer on the substrate over the film. The primer layer is formed according to the selected process conditions. An imprinting unit of the imprint device is configured to receive the substrate from the primer forming unit and perform imprint lithography on the substrate.
    Type: Grant
    Filed: February 18, 2020
    Date of Patent: December 5, 2023
    Assignee: KIOXIA CORPORATION
    Inventors: Kasumi Okabe, Hirokazu Kato, Kei Kobayashi, Daizo Muto
  • Publication number: 20200387066
    Abstract: An imprint device includes a load port for receiving a substrate to be processed, a sensor that acquires information from the substrate about a film on the substrate, and a primer forming unit configured to receive the substrate from the load port. A controller is configured to select primer process conditions corresponding to the film information. The primer forming unit receives primer process conditions from the controller and forms a primer layer on the substrate over the film. The primer layer is formed according to the selected process conditions. An imprinting unit of the imprint device is configured to receive the substrate from the primer forming unit and perform imprint lithography on the substrate.
    Type: Application
    Filed: February 18, 2020
    Publication date: December 10, 2020
    Inventors: Kasumi OKABE, Hirokazu KATO, Kei KOBAYASHI, Daizo MUTO
  • Patent number: 8119313
    Abstract: A method for manufacturing a semiconductor device, includes: supplying a liquid resist containing a water-repellent additive to a surface of a rotating semiconductor wafer fixed to a rotary support to form a resist film to a design thickness on the surface of the semiconductor wafer; spin drying the resist film; bringing a liquid into contact with the resist film and exposing the resist film through the liquid after the spin drying; developing the resist film to form a resist pattern; and performing processing on the semiconductor wafer. A condition for adjusting contact angle between the resist film surface and the liquid is controlled so that the contact angle assumes a desired value, the condition including at least one selected from the group consisting of spin drying time for the resist film, resist temperature during the supplying, pressure of an atmosphere above the semiconductor wafer surface, and humidity of the atmosphere above the semiconductor wafer surface.
    Type: Grant
    Filed: January 29, 2010
    Date of Patent: February 21, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Katsutoshi Kobayashi, Daizo Muto, Koutarou Sho, Tsukasa Azuma
  • Publication number: 20100227262
    Abstract: A method for manufacturing a semiconductor device, includes: supplying a liquid resist containing a water-repellent additive to a surface of a rotating semiconductor wafer fixed to a rotary support to form a resist film to a design thickness on the surface of the semiconductor wafer; spin drying the resist film; bringing a liquid into contact with the resist film and exposing the resist film through the liquid after the spin drying; developing the resist film to form a resist pattern; and performing processing on the semiconductor wafer. A condition for adjusting contact angle between the resist film surface and the liquid is controlled so that the contact angle assumes a desired value, the condition including at least one selected from the group consisting of spin drying time for the resist film, resist temperature during the supplying, pressure of an atmosphere above the semiconductor wafer surface, and humidity of the atmosphere above the semiconductor wafer surface.
    Type: Application
    Filed: January 29, 2010
    Publication date: September 9, 2010
    Inventors: Katsutoshi KOBAYASHI, Daizo Muto, Koutarou Sho, Tsukasa Azuma